MITSUBISHI Nch POWER MOSFET

FS3KM-10
HIGH-SPEED SWITCHING USE

FS3KM-10 OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2

3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2

0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25

4.5 ± 0.2
1 2 3

2.6 ± 0.2
w

q GATE
w DRAIN
q
¡VDSS ................................................................................ 500V e SOURCE

¡rDS (ON) (MAX) ................................................................. 4.4Ω

¡ID ............................................................................................ 3A e

¡Viso ................................................................................ 2000V TO-220FN

APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VDSS Drain-source voltage VGS = 0V 500 V
VGSS Gate-source voltage VDS = 0V ±30 V
ID Drain current 3 A
IDM Drain current (Pulsed) 9 A
PD Maximum power dissipation 30 W
Tch Channel temperature –55 ~ +150 °C
Tstg Storage temperature –55 ~ +150 °C
Viso Isolation voltage AC for 1minute, Terminal to case 2000 Vrms
— Weight Typical value 2.0 g

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS3KM-10
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 500 — — V
V (BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 500V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 1A, VGS = 10V — 3.4 4.4 Ω
VDS (ON) Drain-source on-state voltage ID = 1A, VGS = 10V — 3.4 4.4 V
yfs Forward transfer admittance ID = 1A, VDS = 10V 1.0 1.5 — S
Ciss Input capacitance — 300 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 35 — pF
Crss Reverse transfer capacitance — 6 — pF
td (on) Turn-on delay time — 13 — ns
tr Rise time — 10 — ns
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 30 — ns
tf Fall time — 30 — ns
VSD Source-drain voltage IS = 1A, VGS = 0V — 1.5 2.0 V
Rth (ch-c) Thermal resistance Channel to case — — 4.17 °C/W

PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
50 101
7 tw=10µs
5
POWER DISSIPATION PD (W)

3
DRAIN CURRENT ID (A)

40
2 100µs
100
30 7
5 1ms
3
2 10ms
20
10–1
7
5 TC = 25°C DC
10
3 Single Pulse
2
0 10–2
0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)

10 5
PD = 30W TC = 25°C PD = 30W
Pulse Test VGS = 20V
10V
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

8 4 8V
VGS = 20V
10V
6 8V 3 TC = 25°C 6V
Pulse Test

4 2
6V

2 1 5V
5V

0 0
0 10 20 30 40 50 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS3KM-10
HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
40 10
TC = 25°C TC = 25°C
Pulse Test Pulse Test VGS = 10V
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
32 8
VOLTAGE VDS (ON) (V)

24 6
ID = 4A 20V

16 4
3A

8 2A 2
1A

0 0
0 4 8 12 16 20 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
10 101
VDS = 10V
TC = 25°C 7 Pulse Test
VDS = 50V 5
DRAIN CURRENT ID (A)

8 Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)

3
2 TC = 25°C
6
100
4 7 75°C
5 125°C

3
2
2

0 10–1 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
7 5
5 Tch = 25°C
Ciss 3 VDD = 200V
3 tf VGS = 10V
2 2
SWITCHING TIME (ns)

RGEN = RGS = 50Ω

Ciss, Coss, Crss (pF)
CAPACITANCE

102 102
7
5 7
td(off)
Coss 5
3
2 3
2
101 td(on)
7 Tch = 25°C
5 f = 1MHz Crss 101 tr
3 V GS = 0V 7
2 5
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 10–1 2 3 5 7 100 2 3 5 7 101

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS3KM-10
HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 10
TC = 125°C
GATE-SOURCE VOLTAGE VGS (V)

Tch = 25°C VGS = 0V

ID = 3A Pulse Test

SOURCE CURRENT IS (A)

16 VDS = 100V 8
200V 25°C
12 6

400V 75°C
8 4

4 2

0 0
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 5.0
7 VGS = 10V VDS = 10V
ID = 1mA
GATE-SOURCE THRESHOLD

5 ID = 1/2ID
Pulse Test 4.0
VOLTAGE VGS (th) (V)

3
2
3.0
100
7 2.0
5

3
1.0
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 101
VGS = 0V 7
5 D=1
ID = 1mA
1.2 3 0.5
2
0.2
100
1.0 7 0.1
5
3 0.05
2 0.02 PDM
0.8 0.01
10–1 tw
7 Single Pulse
T
5
0.6 D= tw
3 T
2
0.4 10–2
–50 0 50 100 150 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Feb.1999