BS170

N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features

High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown
E
A B
Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 0.63 3.68 2.67 1.40

Mechanical Data
Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.)
D
BOTTOM VIEW

G H

SG D

All Dimensions in mm

Maximum Ratings
Drain-Source Voltage Drain-Gate Voltage

@ TA = 25C unless otherwise specified Characteristic Symbol VDSS VDGS VGS ID Pd Tj Tj, TSTG Value 60 60 20 300 830 150 -55 to +150 Unit V V V mA mW C C

Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Junction Temperature Operating and Storage Temperature Range

Inverse Diode

@ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.50 0.85 Unit A V

Maximum Forward Current (continuous) Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.5A, Tj = 25C

Electrical Characteristics
Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Drain-Cutoff Current Drain-Source ON Resistance

@ TA = 25C unless otherwise specified Symbol V(BR)DSS VGS(th) IGSS IDSS rDS (ON) RqJA gFS Ciss ton toff Min 60 0.8 Typ 90 1.0 3.5 200 60 5.0 15 Max 3.0 10 0.5 5.0 150 Unit V V nA A W K/W mm pF ns Test Condition ID = 100A, VGS = 0 VGS = VDS, ID = 1.0mA VGS = 15V, VDS = 0 VDS = 25V, VGS = 0 VGS = 10V, ID = 0.2mA Note 1 VDS = 10V, ID = 0.2A, f = 1MHz VDS = 10V, VGS = 0, f =1.0MHz VGS = 10V, VDS = 10V, RD = 100W

Thermal Resistance, Junction to Ambient Air Forward Transconductance Input Capacitance Turn On Time Turn Off Time Notes:

1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.

DS21802 Rev. D-3

1 of 2

BS170

ID (ON), DRAIN SOURCE ON CURRENT (A)

7V

TA = 25C

Pd, POWER DISSIPATION (W)

0.8

(See Note 1)

0.8

VGS = 6V

0.6

0.6

Pulse test width 80s; pulse duty factor 1% 5V

0.4

0.4

0.2

0.2

4V

3V

0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1. Power Derating Curve 200

0.1 0 20 40 60 80 100

VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics

ID (ON), DRAIN SOURCE ON-CURRENT (mA)

500

TA = 25C VGS = 5V

1.0

VDS = 10V TA = 25C

400
ID, DRAIN CURRENT (A)
Pulse test width 80s; pulse duty factor 1%

0.8

Pulse test width 80s; pulse duty factor 1%

300

4.5V

0.6

200

4.0V

0.4

100

3.5V

0.2

3.0V

0 0 2 4 6 8 10

0 0 2 4 6 8 10

VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics

VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage

gfs, FORWARD TRANSCONDUCTANCE (mm)

gf s, FORWARD TRANSCONDUCTANCE (mm)

500
VDS = 10V

500

VDS = 10V

400

Pulse test width 80s; pulse duty factor 1%

400

Pulse test width 80s; pulse duty factor 1%

300

300

200

200

100

100

0 0 2 4 6 8 10

0 0 100 200 300 400 500

VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage

ID, DRAIN CURRENT (mA) Fig. 6 Transconductance vs. Drain Current

DS21802 Rev. D-3

2 of 2

BS170

This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.