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1
FEATURES
14.0+/-0.4
6.6+/-0.3
•High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
2
•High Efficiency: 60%typ. R1.6
3
2.8+/-0.3 PIN
2.3+/-0.3
APPLICATION 1.Drain
For output stage of high power amplifiers in VHF band
0.10
2.Source
Mobile radio sets. 3.Gate
5.1+/-0.5
3.0+/-0.4
UNIT:mm
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
80 8
60 6
Pch(W)
Ids(A)
40 4
20 2
0 0
0 40 80 120 160 200 0 1 2 3 4 5
AMBIENT TEMPERATURE Ta(°C) Vgs(V)
Vgs=4.5V
Ids(A)
100
Vgs=4V
4 80
60
Vgs=3.5V
2 40
Vgs=3V 20
0 0
0 2 4 6 8 10 0 5 10 15 20
Vds(V) Vds(V)
Crss(pF)
80
60 8
40
4
20
0 0
0 5 10 15 20 0 5 10 15 20
Vds(V) Vds(V)
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
Idq=0.5A
40 80
Pout(W) , Idd(A)
ηd
30 60
ηd(%)
ηd(%)
ηd
Idd(A)
30 Gp 60
20 Ta=25°C 40
20 40 f=175MHz
Vdd=12.5V
10 20 10 Idd
Idq=0.5A 20
Idd
0 0 0 0
0 10 20 30 0 1 2 3
Pin(dBm) Pin(W)
Ids(A)
40 8 4
Idd 6
20 4 2
2
0 0 0
4 6 8 10 12 14 2 3 4 5
Vdd(V) Vgs(V)
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
EQUIVALENT CIRCUIT(f=175MHz)
Vgg Vdd
C1 9.1KOHM
L1
C3
100OHM
8.2kOHM
10pF C2
L1 L2
RD30HVF1
RF-IN RF-OUT
56pF 56pF
100pF
8pF
12
12 10
8
27 32
32 44
14
34 54
61 100
100
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
f=146MHz Zout
f=135MHz Zout
f=175MHz Zin
f=135MHz Zin
f=146MHz Zin
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W
146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W
175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
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