SHINDENGEN

VX-2 Series Power MOSFET

N-Channel Enhancement type

2SK2564
(F8F60VX2)
600V 8A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input Inverter Power Factor Control Circuit

OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)

RATINGS
Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3Nm j Mounting Torque Ratings -55`150 150 600 }30 8 24 8 50 8 2 0.5 Unit V A W A kV NEm

VX-2 Series Power MOSFET

Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc The\mal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton toff Turn-Off Time Conditions

2SK2564 ( F8F60VX2 )
Min. 600 2. 4 2. 5 Typ. Max. 250 }0. 1 1. 2 3. 5 1. 5 2. 5 Unit V A S V /L nC pF 80 290 ns

I D = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = }30V, VDS = 0V I D = 4A, VDS = 10V I D = 4A, VGS = 10V I D = 1mA, VDS = 10V I S = 4A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 8A VDS = 10V, VGS = 0V, f = 1MHZ I D = 4A, RL = 37.5, VGS = 10V

5. 5 0. 9 3. 0 42 1130 85 245 55 195

2SK2564
24 Tc = 55C

Transfer Characteristics

25C 20

Drain Current ID [A]

16 100C 12 150C

VDS = 25V pulse test TYP 0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK2564
10

Static Drain-Source On-state Resistance

Static Drain-Source On-state Resistance RDS(ON) []

ID = 4A 1

0.1

VGS = 10V pulse test TYP -50 0 50 100 150

Case Temperature Tc [C]

2SK2564
6

Gate Threshold Voltage

Gate Threshold Voltage VTH [V]

1 VDS = 10V ID = 1mA TYP -50 0 50 100 150

Case Temperature Tc [C]

2SK2564
100

Safe Operating Area

10 100s

Drain Current ID [A]

200s

R DS(ON) limit

1ms

10ms

0.1

DC

Tc = 25C Single Pulse 0.01 1 10 100 1000

Drain-Source Voltage VDS [V]

2SK2564
Transient Thermal Impedance

10

Transient Thermal Impedance jc(t) [C/W]

0.1

0.01 10-4 10-2

10-3

10-1

100

101

102

Time t [s]

2SK2564
100

Single Avalanche Energy Derating

Single Avalanche Energy Derating [%]

80

60

40

20

50

100

150

Starting Channel Temperature Tch [C]

2SK2564
10000

Capacitance

Capacitance Ciss Coss Crss [pF]

Ciss 1000

Coss 100

Crss

f=1MHz Tc=25C TYP 10 0 20 40 60 80 100

Drain-Source Voltage VDS [V]

2SK2564
Single Avalanche Current - Inductive Load
VDD = 90V VGS = 15V 0V Rg = 25 IAS = 8A

100

10

EAR = 29mJ

EAS = 290mJ

Single Avalanche Current IAS [A]

0.1 0.1 1

10

100

Inductance L [mH]

2SK2564
100

Power Derating

80

Power Derating [%]

60

40

20

50

100

150

Case Temperature Tc [C]

2SK2564
500

Gate Charge Characteristics

20

VDS

Drain-Source Voltage VDS [V]

VDD = 400V 200V 300 100V

VGS

15

10 200

5 100 ID = 8A TYP 0 0 20 40 60 80 0 100

Gate Charge Qg [nC]

Gate-Source Voltage VGS [V]

400