bjt ce amp.

sqproj
Description
10 V R1 200 k CB 10 u Vs R2 50 k VCC RC 12 k Vo Vs R1 R2 CE CB

C
Vo

gm vbe
RC

RE RE 3.6 k CE 15 u

Shown in the gure is a common-emitter amplier and its small-signal equivalent circuit. The midband gain of the circuit is given by AV = gm RC . The capacitors CB and CE inuence the low cut-o frequency fL whereas the device capacitances C and C inuence the high cut-o frequency fH .

Exercise Set
1. For the given component values, calculate the bias current IC and the midband gain AV . Very with simulation results. 2. Change CB from 10 F to 20 F , and observe its eect on fL . 3. Change CE from 15 F to 30 F , and observe its eect on fL . 4. The capacitance C is directly proportional to the BJT parameter cjc (collector junction capacitance at zero bias) [1]. Increase the value of cjc by a factor of 2, and observe its eect on fH . 5. Perform transient simulation with a 1 mV sinusoidal input with f = 1 kHz and observe the output voltage. Verify that the gain matches with that obtained by AC simulation. Repeat for f = 100 Hz. 6. If only a part of RE (say, 3 k out of 3.6 k) is bypassed, how will it aect IC and AV ? Verify with simulation. 1

References: 1. P. Antognetti and G. Massabrio, Semiconductor device modeling with SPICE, McGrawHill: New York, 1988.