Philips Semiconductors

Product specification

Triacs high commutation

GENERAL DESCRIPTION
Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.

BTA212X series B

QUICK REFERENCE DATA

SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 600B 600 12 90 800B 800 12 90 V A A

PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1

PIN CONFIGURATION
case

SYMBOL

T2
main terminal 2 gate
1 2 3

T1

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature full sine wave; Ths 56 C full sine wave; Tj = 125 C prior to surge; with reapplied VDRM(max) t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. -600 6001 12 90 100 40 100 2 5 5 0.5 150 125 MAX. -800 800 UNIT V A A A A2s A/s A V W W C C

I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj

over any 20 ms period

-40 -

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. February 1996 1 Rev 1.100

Philips Semiconductors

Product specification

Triacs high commutation

ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. -

BTA212X series B

TYP.

MAX. 2500

UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

10

pF

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.0 5.5 UNIT K/W K/W K/W

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2

CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G-

MIN. 2 2 2 0.25 -

TYP. 18 21 34 31 34 30 31 1.3 0.7 0.4 0.1

MAX. 50 50 50 60 90 60 60 1.6 1.5 0.5

UNIT mA mA mA mA mA mA mA V V V mA

IL

Latching current

VD = 12 V; IGT = 0.1 A

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

VD = 12 V; IGT = 0.1 A IT = 17 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 12 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 1000 TYP. 4000 24 2 MAX. UNIT V/s A/ms s

2 Device does not trigger in the T2-, G+ quadrant. February 1996 2 Rev 1.100

Philips Semiconductors

Product specification

Triacs high commutation

BTA212X series B

20

Ptot / W

BT138

Ths(max) / C = 180

45

15

IT(RMS) / A

BT138X

56 C
65

15

120 90 60

10
85

10

30

5
5 105

5 IT(RMS) / A

10

125 15

0 -50

50 Ths / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
ITSM / A BTA212

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.

1000

25

IT(RMS) / A

BT138

20

dI T /dt limit 100

15

10

IT T 10 10us

I TSM time
5

Tj initial = 125 C max 100us 1ms T/s 10ms 100ms

0 0.01 0.1 1 surge duration / s 10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A BT138 IT 80 T ITSM time

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 56C.
VGT(Tj) VGT(25 C)

100

1.6 1.4 1.2 1

BT136

Tj initial = 125 C max 60

40

0.8
20

0.6 0.4 -50

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs high commutation

BTA212X series B

3 2.5 2 1.5 1

IGT(Tj) IGT(25 C)

BTA212 T2+ G+ T2+ GT2- G-

40

IT / A Tj = 125 C Tj = 25 C

BT138 typ max

30 Vo = 1.175 V
Rs = 0.0316 Ohms

20

10

0.5 0 -50
0

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

3 2.5 2 1.5 1

TRIAC

10

Zth j-hs (K/W)

BT138

with heatsink compound without heatsink compound 1 unidirectional 0.1

P D tp

bidirectional

0.01

0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.

3 2.5 2 1.5 1 0.5

TRIAC

1000

dIcom/dt (A/ms)

BTA212

100

10

0 -50

50 Tj / C

100

150

1 20

40

60

80 Tj / C

100

120

140

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical critical rate of change of commutating current dIcom/dt versus junction temperature.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs high commutation

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0

BTA212X series B

4.6 max 2.9 max

Recesses (2x) 2.5 0.8 max. depth

2.8 6.4 15.8 19 max. max. seating plane 15.8 max

3 max. not tinned 3 2.5 13.5 min. 1 0.4

M

3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7

5.08

Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 2. The improved isolation rating applies only to the SOT186 version A envelope.

February 1996

Rev 1.100

Philips Semiconductors

Product specification

Triacs high commutation

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values

BTA212X series B

This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100