MMBTA56

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) 3

Top View
.056 (1.43) .052 (1.33)

Mounting Pad Layout

0.031 (0.8)

max. .004 (0.1)

Pin Configuration 1 = Base 2 = Emitter 3 = Collector

0.035 (0.9) 0.079 (2.0)

.007 (0.175) .005 (0.125)

.037(0.95) .037(0.95)

.045 (1.15) .037 (0.95)

0.037 (0.95)

0.037 (0.95)

.016 (0.4)

.016 (0.4)

.102 (2.6) .094 (2.4)

Dimensions in inches and (millimeters)

Features
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBTA06 is recommended. This transistor is also available in the TO-92 case with the type designation MPSA56.

Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2GM Packaging Codes/Options: E8/10K per 13 reel (8mm tape), 30K/box E9/3K per 7 reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Notes: (1) Device on fiberglass substrate, see layout. (2) Device on alumina substrate.

Ratings at 25C ambient temperature unless otherwise specified.

Symbol VCBO VCEO VEBO IC Ptot RJA Tj TS

Value 80 80 4.0 500 277 300(2) 450(1) 150 55 to +150

(1)

Unit V V V mA mW C/W C C

Document Number 88230 20-Feb-02

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MMBTA56
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter DC Current Gain Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base-Emitter ON Voltage Collector-Emitter Cut-off Current Collector-Base Cut-off Current Gain-Bandwidth Product

= 25C unless otherwise noted)

Symbol hFE V(BR)CEO V(BR)EBO VCEsat VBE(on) ICES ICBO fT

Test Condition VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 1mA, IB = 0mA IE = 100mA, IC = 0 IC = 100mA, IB = 10mA IC = 100mA, IB = 10mA IC = 50mA, IB = 5mA VCE = 60V, IB = 0 VCB = 80V, IE = 0 VCE = 1V, IC = 100mA f = 100MHz

Min 100 100 80 4.0 50

Typ

Max 0.25 1.2 1.2 100 100

Unit V V V V nA nA MHz

0.30 (7.5) 0.12 (3)

.04 (1)

.08 (2) .04 (1) .08 (2)

0.59 (15) 0.47 (12)

0.03 (0.8)

0.2 (5)

0.06 (1.5) 0.20 (5.1)

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Document Number 88230 20-Feb-02

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.