PART 1: MOSFET DEVICE STRUCTURE 1.

Advantages of CMOS over Bipolar Transistor MOSFET and BJT have their own characteristics based on the function of a system. MOSFET is preferred over BJT because of its advantages. I. Ease of scaling II. CMOS logic consume less power III. Simpler fabrication process. 2. Structure of NMOS and PMOS Transistor

a. No gate voltage, = There is no current will flow from source and drain. b. Positive voltage applied at the gate, > Conduction channel is produced because of this transverse electric field. c. Small Drain to Source voltage, applied, > Drain junction will get reverse biased and the depletion region here gets widened as the drain becomes more positive with respect to the source. Current flow starts from the source to drain and the current flow increases with the increase in the VDS. d. is increased At point when = , pinch off voltage will occurs. The voltage drop across the channel does not increase as the drain increase; instead the pinchedoff region widens. The drain current reaches a limit and cease to increase. PART 3: MOSFET CHARACTERISTIC

3. MOSFET Body Effect The body effect describes the changes in the threshold voltage by the change in , the source-bulk voltage of the MOSFET. Negative power supply will cause a reverse bias voltage between source and body when operating by widening the depletion region. This can be thought of as a second gate, and is sometimes referred to as the "back gate PART 2: MOSFET OPERATION 1. Explain the operation of the transistor in below situations:

Based from the figure, MOSFET operating regions as follow: Cut off region ( < ) Triode region ( > & < ) Saturation region ( > & > ) While in cut off region, = 0. When MOSFET in linear region, = ( 2)( ) and it operating in saturation region, = ( )2 . 2 PART 4: FABRICATION PROCESS STEP 1. Explanation of terms. Oxidation - A process which converts silicon on the wafer into silicon dioxide.

Threshold voltage implant Modifying implant dosage using variable aperture dopant implants Deposition Process applying a thin film to a substrate using controlled chemical reaction Etching Remove material selectively in order to create patterns. Doping Introduction into the semiconductor crystal to deliberately change its conductivity. Spacer oxide Process of removing spacer material on the silicon substrate. Ion implantation Introduce dopant impurities into crystalline silicon. Annealing Process to slowly cool down, in order to remove internal stresses and toughen it 1. The majority carrier in MOSFET for phosphorus, arsenic and antimony is electron. While Boron and Gallium is holes. PART 5: CMOS CIRCUIT DESIGN AND TECHNOLOGY SCALING 1. Effect of scaling the CMOS in term of performance of the transistors? More transistors in small area Consume less power to operate Speed is low and reduced Higher leakage current 2. What is short channel effect? Short channel effect is an effect which the channel length is the same order of magnitude as the depletion-layer widths of the source and drain junction. PART 6: USING CMOS FOR DIGITAL IC DESIGN 1. CMOS is preferred for digital IC because the devices are high noise immunity and loss static power consumption. Significant power is only drawn when switching between on and off states. CMOS device do not produce as much waste heat as other forms of logic. Besides that, CMOS also allows a high density of logic function in a chip.

2. (a) Transistor Transistor Logic (TTL)

An input transistor, 1 perform as a current steering function. The transistor can operate in either forward or reverse mode to steer current to 0 or from 0 .
0 is a phase splitter driving transistor to drive the output stage. Allows the logic condition to be phase-splitted in opposite directions so that the output transistors can be driven in anti-phase. (b) CMOS

MOSFET NMOS NMOS PMOS PMOS

Condition on MOSFET < > > >

State of MOSFET OFF ON OFF ON

When is low, the NMOS is OFF, while PMOS stays on: instantly charging to logic high. When is high, the NMOS is on and the PMOS is on: draining the voltage at to logic low

References 1. Yadavvls. (2005, January 12). Advantages of MOSFETS over Bipolar Transistors in on-chip logic. Message posted to http://www.edaboard.com/thread236378.html. 2. Farlex. (2012). P-type Metal Oxide Semiconductor. Available: http://encyclopedia2.thefreedictionary.com/P-type+Metal-Oxide-Semiconductor. Last accessed 19th June 2012. 3. Anand Srivinasan. A (2007,June 7). What is body effect? Message posted to http://www.edaboard.com/thread99164.html 4. Mudlock. (2002). CMOS. Available: http://en.wikipedia.org/wiki/CMOS. Last accessed 19th June 2012. 5. Bruce Sales. (2002). CMOS Inverters. Available: http://courseware.ee.calpoly.edu/~dbraun/courses/ee307/F02/02_Sales/section02_bruce_sales.html. Last accessed 19th June 2012.