BC556 thru BC558

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistors (PNP)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As complementary types, the NPN transistors BC546...BC548 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18.

max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

Bottom View

Maximum Ratings & Thermal Characteristics

Parameter Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 Symbol VCBO

Ratings at 25C ambient temperature unless otherwise specified.

Value 80 50 30 80 50 30 65 45 30 5 100 200 200 200 500 250

(1) (1)

Unit V

Collector-Emitter Voltage

VCES

Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range

VCEO VEBO IC ICM IBM IEM Ptot RJA Tj TS

V V mA mA mA mA mW C/W C C

150 65 to +150

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88161 09-May-02

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BC556 thru BC558

Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter
Current gain group

= 25C unless otherwise noted)

Symbol A B C A B C A B C A B C A B C A B C A B C VCEsat VBEsat VBE BC556 BC557 BC558 BC556 BC557 BC558 hFE hfe

Test Condition VCE = 5V, IC = 2mA, f = 1 kHz VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 1kHz VCE = 5V, IC = 2mA, f = 1kHz

Min 1.6 3.2 6 110 200 420 600

Typ 220 330 600 2.7 4.5 8.7 18 30 60 1.5 10-4 2 10-4 3 10-4 90 150 270 180 290 500 120 200 400 80 250 700 900 660 0.2 0.2 0.2 150 2

Max 4.5 8.5 15 30 60 110 220 450 800 300 650 750 800 15 15 15 4 4 4 6 10

Unit

Small Signal Current Gain

Current gain group

Input Impedance
Current gain group

hie

Output Admittance
Current gain group

hoe

Reverse Voltage Transfer Ratio

Current gain group

hre

VCE = 5V, IC = 10A

Current gain group

DC Current Gain
Current gain group

VCE = 5V, IC = 2mA

VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA VCE = 80V VCE = 50V VCE = 30V VCE = 80V, Tj = 125C VCE = 50V, Tj = 125C VCE = 30V, Tj = 125C VCE = 5V, IC = 10mA, f = 100MHz VCB = 10V, f = 1MHz VCE = 5V, IC = 200A, RG = 2k, f = 1kHz, f = 200Hz

Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage

mV mV mV nA nA nA A A A MHz pF dB

Collector-Emitter Cutoff Current

ICES

Gain-Bandwidth Product Collector-Base Capacitance Noise Figure BC556, BC557, BC558

fT CCBO F

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Document Number 88161 09-May-02

BC556 thru BC558

Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

Document Number 88161 09-May-02

www.vishay.com 3

BC556 thru BC558

Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

Relative h-parameters versus collector current

10
6

he (-IC)

he (-IC = 2 mA)
2

10
6 4

hie

hre

1
6 4

hfe

hoe 10 -1
2 4

10

-1

-VCE = 5 V Tamb = 25C 1

2 4

10 mA

-IC
www.vishay.com 4 Document Number 88161 09-May-02

BC556 thru BC558

Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

Document Number 88161 09-May-02

www.vishay.com 5