Documente Academic
Documente Profesional
Documente Cultură
November 2008
Features
High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts
1
TO-264
Parameter
Ratings
230 230 5 15 1.5 150 1.04 - 50 ~ +150
Units
V V V A A W W/C C
Total Device Dissipation(TC=25C) Derate above 25C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RJC
* Device mounted on minimum pad size
Parameter
Thermal Resistance, Junction to Case
Max.
0.83
Units
C/W
hFE Classification
Classification
hFE1
R
55 ~ 110
O
80 ~ 160
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Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz
Min.
230 230 5
Typ.
Max.
Units
V V V
A A
V V MHz pF
Ordering Information
Part Number
2SC5200RTU 2SC5200OTU FJL4315RTU FJL4315OTU
Marking
C5200R C5200O J4315R J4315O
Package
TO-264 TO-264 TO-264 TO-264
Packing Method
TUBE TUBE TUBE TUBE
Remarks
hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade
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Typical Characteristics
16
IB=200mA
14
12 10 8
Tj=25 C
Tj=-25 C
IB = 40mA
4 2
10
IB = 0
0 0 2 4 6 8 10 12 14 16 18 20
1 1 10
10000
Tj=125 C
Tj=25 C
Ic=10Ib
Vce=5V
100 Tj=-25 C
o
1000
100
Tj=125 C
Tj=25 C
10
Tj=-25 C 10
1 1 10
1 0.1
10
12
10000
VCE = 5V
10
Ic=10Ib
Tj=-25 C 1000
Tj=25 C
Tj=125 C
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100 0.1
10
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Typical Characteristics
Transient Thermal Resistance, Rthjc[ C / W]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
100
IC MAX. (Pulsed*)
10ms*
10
IC MAX. (DC)
100ms* DC
0.1
160 140
120 100 80 60 40 20 0 0 25 50
o
75
100
125
150
175
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Package Dimensions
TO-264
6.00 0.20
20.00 0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 0.10
+0.25
(2.00)
20.00 0.50
2 (R .00
0 3.3
0.2
.00
(1.50)
0.60 0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
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