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HEXFET
Power MOSFET
3/16/01
Parameter Typ. Max. Units
R
JC
Junction-to-Case 0.65
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 C/W
R
JA
Junction-to-Ambient 62
Thermal Resistance
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V
DSS
= 75V
R
DS(on)
= 13m
I
D
= 82AC
S
D
G
TO-220AB
Advanced HEXFET
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
82C
280
A
C Starting T
J
= 25C, L = 370H
R
G
= 25, I
AS
= 43A, V
GS
=10V (See Figure 12)
C Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
C I
SD
43A, di/dt 300A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width 400s; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
1 This is a calculated value limited to T
J
= 175C .
C Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 V V
GS
= 0V, I
D
= 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.074 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 13 m V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance 38 S V
DS
= 50V, I
D
= 43A
25
A
V
DS
= 75V, V
GS
= 0V
250 V
DS
= 60V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 160 I
D
= 43A
Q
gs
Gate-to-Source Charge 29 nC V
DS
= 60V
Q
gd
Gate-to-Drain ("Miller") Charge 55 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 13 V
DD
= 38V
t
r
Rise Time 64 I
D
= 43A
t
d(off)
Turn-Off Delay Time 49 R
G
= 2.5
t
f
Fall Time 48 V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 3820 V
GS
= 0V
C
oss
Output Capacitance 610 V
DS
= 25V
C
rss
Reverse Transfer Capacitance 130 pF = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche EnergyC 12803401 mJ I
AS
= 50A, L = 370H
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRF2807
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 25 C J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 175 C J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D
4.5V
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
GS
D
T = 25 C
J
T = 175 C
J
V =
I =
GS
D
10V
71A
IRF2807
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 40 80 120 160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
G
S
FOR TEST CIRCUIT
SEE FIGURE
I = D
13
43A
V = 15V
DS
V = 37V
DS
V = 60V
DS
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100sec
IRF2807
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
20
40
60
80
100
T , Case Temperature ( C)
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
D
LIMITED BY PACKAGE
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
J
A
S
I
D
TOP
BOTTOM
18A
30A
43A
R
G
I
AS
0.0 1 t
p
D.U. T
L
V
D S
+
-
V
DD
DRI VER
A
15V
20V VGS
IRF2807
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Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
C
C
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
C
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET
power MOSFETs
IRF2807
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LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOU RC E
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 ( .185)
4.20 ( .165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTES:
1 D IMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 C ONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
Part Marking Information
TO-220AB
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
PART NUMBER
I NTERNATI ONAL
RECTI FIER
LOGO
EXAMPLE : THI S I S AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/