Surface and Coatings Technology 114 (1999) 206212

High intensity pulsed ion beam sources and their industrial applications
G.E. Remnev a, *, I.F. Isakov a, M.S. Opekounov a, V.M. Matvienko a, V.A. Ryzhkov a, V.K. Struts a, I.I. Grushin a, A.N. Zakoutayev a, A.V. Potyomkin a, V.A. Tarbokov a, A.N. Pushkaryov a, V.L. Kutuzov b, M.Yu. Ovsyannikov b
a Nuclear Physics Institute of Tomsk Polytechnic University, Lenin Str. 2a, Tomsk 634050, Russia; b Linetron, Inc., N. Novgorod, Russia Received 28 April 1998; received in revised form 20 January 1999; accepted 4 February 1999

Abstract This paper presents research on practical applications of high intensity pulsed ion beams (HIPIBs) investigated at the Nuclear Physics Institute of the Tomsk Polytechnic University (NPI TPU ) and the Scientic Industrial Enterprise Linetron, N. Novgorod. The most interesting scientic results have been obtained in the following elds: $ HIPIB surface modication for the increase of wear resistance of tools; $ deposition of thin metal, composite and diamond-like carbon (DLC ) lms; $ short-pulse ion implantation in semiconductors. It was shown that ion beams with relatively low power density (106109 W/cm2) are very promising for industrial applications. The paper presents a brief description of the HIPIBsolids interaction and main HIPIB parameters used in the research, as well as modication of properties of treated samples. 1999 Published by Elsevier Science S.A. All rights reserved.
Keywords: Deposition; High intensity pulsed ion beams; Ion implantation; Semiconductors; Surface modication; Thin lms; Wear resistance

1. Introduction Sources of high intensity pulsed ion beams ( HIPIBs) were developed in the mid-1970s for investigations connected with the realization of controlled inertial thermonuclear synthesis [1]. The development of accelerators and diode systems, as well as new approaches to beam generation and beam transport to the target, focused on producing high energy input to the target over a short time. At the beginning of the 1980s, the rst investigations on practical applications of HIPIBs for implantation and semiconductor annealing were carried out at Cornell University, USA [2]. The possibilities of HIPIB application for modication of properties of metals and alloys were studied at the NPI TPU, Russia [3]. For the past 10 years, a series of laboratories in the USA, Russia and Japan have studied the practical applications of
* Corresponding author. Tel.: +7-3822-416930; fax: +7-3822-416930. E-mail address: remnev@ephc.npi.tpu.ru (G.E. Remnev)

HIPIBs [410]. The most interesting scientic results were obtained in such elds as HIPIB surface modication leading to increasing metal and alloy workpiece wear resistance, the deposition of thin metal, composite and diamond-like lms, the production of nanopowders consisting of metals and their compositions, as well as short pulse ion implantation into semiconductors. It was found that ion beams with relatively low power density (106109 W/cm2) are very promising for industrial applications. New requirements for the HIPIB accelerators and diode systems, such as long lifetimes, high stability of parameters and production of ion beams with dierent ion composition, have since appeared. The NPI TPU approach is based on using the eect of explosive electron emission for the formation of a dense plasma directly in the magnetically insulated diode [11]. As a result of the investigation on HIPIB inuence on materials, one can say that practical application of HIPIBs is based on both the heating of surface layers and short-pulse doping. In the rst case, the result of the beam inuence is similar to the action of pulsed laser radiation, nanosecond electron beams (in particu-

0257-8972/99/$ see front matter 1999 Published by Elsevier Science S.A. All rights reserved. PII: S0 2 5 7- 8 9 7 2 ( 9 9 ) 0 0 05 8 - 4

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lar, low energy electron beams), pulsed plasma and sparks. Depending on the target material, the power density is from 5106 to 109 W/cm2. Thus, the ion energy and current density are chosen according to this requirement. In the second case [12], both ion implantation and energy inuence take place. The action of high power ion beams with power ow density 106107 W/cm2 leads to simultaneous implantation of the doping atoms and heating of the surface layers with consequent rapid cooling after pulse termination.

2. HIPIBsolids interaction The pulsed character of HIPIB action denes the principal dierence between processes taking place in the surface layer under the HIPIB action and under the conventional ion implantation [4,1318]. The thin nearsurface layer (with thickness depending on ion range and thermometric conductivity of metals) absorbs energy transferred by the beam for the pulse duration time. For nanosecond HIPIBs, the depth of this surface layer is ~110 mm. In order to understand the main applications of HIPIBs, it is necessary to characterize the beams developed in the NPI TPU. We have developed, constructed and applied several types of HIPIB accelerator with parameters as described in Table 1. The rst type, named TEMP-1, generates Cn+(70%) and H+ (30%); the second accelerator, TEMP-2, generates H+ (60%) and Cn+ (40%). The short-pulsed implanter MUK-M generates Aln+ (70%), Cn+ and H+ (30%) with an aluminum anode and Cn+ (70%), H+ (30%) with polyethylene anode. Fig. 1 shows depth proles of the absorbed energy density injected by these beams into the near-surface layer of an Fe target (a) and temporal evolution of the temperature in an Al target after termination of the
Table 1 High power ion beam sources Accelerator Type of microsecond generator Oil GPVb Oil GPV Type of diode Particle energy a (keV ) 300 400 Current density on the target (A/cm2) 40150 40250 Pulse repetition rate (min1) 15 5 Beam size (cm2) 20100 20200 Applications

Fig. 1. (a) Depth proles of the specic absorbed energy deposited by the Temp-1 (1), Temp-2 (2) and MUK-M (3) HIPIBs. (b) Evolution of temperature depth proles after shot (10 ns, 2600 ns after energy absorption).

TEMP-1 TEMP-2

Self-insulated MIDc MID with external insulation Self-insulated MID MID with external insulation

TEMP-4 MUK-M

Gas GPV Pulsed transformer

300 150

40150 120

40 600

40100 180

Research on strengthening of dierent details, cutting tool strengthening Research on sputtering of materials, cleaning of surfaces, deposition of thin lms Cutting tool strengthening Research on short-pulse implantation

a Energy for single-charged ions. b Generator of pulsed voltage. c Magnetically insulated diode.

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Fig. 2. Photograph of ablated plasma jet being produced for lm deposition.

pulses. One can see how the temperature gradients vary with the target depth and the high heating and cooling rates, up to 1011 K/s and 1091010 K/s, respectively. Obviously, the temperature of the surface layer can be controlled by current density up to the melting of the surface layer and formation of vapor plasma layer. The temperature of vaporization on the target surface can be reached, for most materials, with the beams of TEMP-1 and for all materials with the beams of TEMP-2. The MUK-M is able to vaporize surface hydrocarbon contaminants mainly, the vaporization is also available. Evaporation and ionization of the near-surface layer by HIPIB results in generation of an ablated plasma jet adiabatically spreading with velocity 105107 cm/s in a direction normal to the treated surface ( Fig. 2). This process generates a very strong recoil impulse directed into the treated sample. The recoil impulse forms an intense compression wave in the target with a pressure of 105 bar (Al and Cu targets) for j 200 A/cm2, U= i 300 keV of TEMP-1 beam. The formation of shock waves in metals increases the concentration of defects in the target. As a result, the microhardness is increased to a depth of about 50100 mm. We can see in Fig. 3 that the microhardness of R6M5 treated by HIPIB with current density of 60 A/cm2 is increased to a depth of 50 mm. Amorphous structures with high corrosion resistance have possibly been formed as a result of this rapid cooling and mixing of the target components in the near-surface layer. The formation of carbides, nitrides and oxides takes place in this layer as a result of chemical reactions induced by the HIPIB inuence. All types of accelerator can be used for surface

strengthening, the deposition of thin lms and surface cleaning, whereas MUK-M can be applied for shortpulsed ion implantation also. Generally speaking, the inuence of these processes on metals depends on the beam power density and the thermal physical parameters of metals. The experiments show (Fig. 4) that HIPIB irradiation of metal surfaces leads to structural, physical and chemical transformations, as well as changing the surface texture (with TEMP beams). Taken together, these processes lead to modication of the surface layer and improvement of tribological properties, such as increased wear resistance ( Fig. 5), corrosion resistance and decreased friction factor.

Fig. 3. Microhardness of R6M5 treated by carbon HIPIB vs. depth (transversal cross-section): (1) before treatment; (2) after treatment ( j=60 A/cm2).

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power density of the MUK beam, the melting layer is thinner than in the cases of irradiation by TEMP-1 and TEMP-2 beams. Short-pulsed ion implantation into semiconductors [2] allows the development of new technological processes. High power ion beams with current densities higher than current densities of conventional ion implantation by as much as a million times can be used. Experiments show [19] that such phenomena as heating, injection of doping ions, formation of defects and component mixing on the surface take place in the process. The following is a brief description of HIPIB applications developed at NPI TPU.
(a)

2.1. High power ion beam strengthening of workpieces One of the earliest directions of HPIB application [15] was connected with strengthening cutting tools. Tool steels and hard alloys have been investigated [20,21]. Investigations of tool steel surface layers by SIMS show an increase in iron carbide content in the surface layer. Defect structure is modied at depth up to 4050 mm; leading to an increase in microhardness. If a boron lm is deposited before the irradiation of the surface, the microhardness is considerably increased. Structural and chemical modications of surface layers lead to increased wear resistance of drills and other tools by as much as two to six times. An increase in operation time for treated tools is observed in industrial conditions. Research on strengthening cutting tools, made of hard alloys on a base of tungsten carbide and titanium carbide, has been carried out. Fig. 5 shows the hard alloy cutting plates wear dependence on time. The operational (cutting) time is increased after the HIPIB irradiation and post-irradiation thermal annealing by as much as three times, compared with untreated tools. On the basis of these investigations, a technology to strengthen hard alloy cutting tools has been developed. This process is based on the Temp-1 accelerator. The technology is applied in industrial conditions in the Scientic Industrial Enterprise Linetron, N. Novgorod, Russia. This technology is used for strengthening of cup-like and tangential cutting tools, made of hard alloys ( WC, TiC, Co). These tools are used for treatment of railway wheels. One of the applications of the HIPIB, developed jointly with the Moscow Aviation Institute and the Institute of Aviation Materials ( V.A. Shulov, N.A. Nochovnaya), Moscow, Russia, is the strengthening of blades of gas-turbine engines [16,22,23]. The samples, made of VT9, VT8M, VT33, VT18Y and VT25Y alloys, have been treated by the TEMP-1 beams ( j =20180 A/cm2, U=300 kV ). The treatment with i low ion current density j <60 A/cm2 leads to removal i of the carbohydrates from the surface, as well as to melting sharp edges and ledges. An increase in the

(b) Fig. 4. Structural modication eects: (a) untreated steel 316 (500); (b) steel 316 after one shot of Temp at 140 A/cm2 (500).

Fig. 5. Hard alloy tool wear depending on time: (1) untreated tool; (2) tool after HIPIB; (3) tool after HIPIB and thermal treatment.

At a beam power from 106 to 107 W/cm2 (MUK-M), the strengthening of metals and alloys does not lead to a change in the surface texture. The surface is strengthened at the expense of tempering eects by the rapid cooling of the surface, as well as at the expense of doping atoms implanted by high number of pulses (103104). The cooling rate depends on the target material and quantity of absorbed energy. Due to the lower

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current density results in changing the chemical composition of the surface layer, surface texture and structure. After irradiation, defects and polycrystalline structures are formed to a depth up to 1040 mm. A consequent diusion annealing leads to removal of defects and to the formation of a plastic structure. The macrodefects (craters, cracks) on the surface of the samples are smoothed; the roughness of the surface is reduced. At high ion current densities j >60 A/cm2, microcraters are i formed connected to the defects in the surface layer. The size and density of microcraters are reduced, if the samples are polished before irradiation. 2.2. Beam erosion treatment of surfaces The HIPIB irradiation of targets results in removal of light-melting and carbohydrate admixtures. An increase in the current density leads to removal of the surface layer [24]. Layers with 0.11 mm thickness can be removed with one shot of the TEMP-1 accelerator. The energy consumption is about 1 kW h/m2. The eciency of such treatment is very high. The beam erosion treatment can be used for cleaning the surfaces before the deposition of dierent coatings. In particular, the adhesion of wear resistant titanium nitride coating is increased when the samples were cleaned by HIPIB before the deposition [15,25]. The beam erosion treatment was used for cleaning blades of gas turbines after use in aviation engines [16,26,27]. Operation characteristics of the used blades, made of VT9 and VT18Y, were increased up to the level of new blades. 2.3. Formation of thin metal and composite lms at the sputtering of targets by HIPIBs In HIPIB deposition, the beam rapidly heats a nearsurface layer (up to several micrometers), resulting in vaporization and ionization (species density up to 1019/cm3, electron and ion temperature of 0.22 eV ). The ablation jet expands outward until it is condensed as a lm onto an adjacent substrate ( Fig. 2). This process is analogous to the pulsed laser deposition, but it uses higher total energy incident on the target. As a result, deposition rates are accelerated and larger areas can be covered. Advantages of HIPIB deposition include: 1. very high deposition rates (up to 1 cm/s); 2. the energetic ionized material allows the formation of material unattainable otherwise; 3. target material stoichiometry is preserved allowing the formation of complex lms; 4. crucibles and laments are eliminated, leading to improvement in lm purity. Refs. [14,2830] demonstrate the possibility of HIPIB treatment for deposition of composite lms, consisting of high temperature superconductive ceramics (HTSCC ). The HTSCC lms ( YBa Cu O ) were 2 3 7x
Fig. 6. AES concentration depth proles of C and O in Au lm deposited onto AsGa substrate.

obtained at low temperature of the substrate (300 450C ). They were deposited on (100)MgO and Al O (100)LiTaO substrates; after 50 consequent pulses 2 3 of HPIB ( j =150 A/cm2), the lm thickness reached i 2 mm. Refs. [28,29] present results of investigations on deposition of thin diamond-like lms and hard-melting lms. An experimental study on gaseous contamination of thin W and Au lms deposited from the ablated plasma generated by intense pulsed ion beam (IPIB: H+=60%, C+=40%, ion energy 350 keV, ion current density at a target 300 A/cm2, pulse duration 60 ns) was carried out. Non-destructive charged particle activation analysis (CPAA) via nuclear reactions 12C(d,n)13N and 14N(d,n)15O induced by 3.1 MeV deuterons was applied for C and N determinations. Quantitative AES depth proling of the C, N and O concentration in the lms was carried out ( Fig. 6). Energy-disperse X-ray uorescence analysis ( XRF ) was used to determine the thickness of lms. The high instantaneous deposition rates of order 0.4 0.5 mm/s, obtained with the IPIB, reduce the low impurity content in the lm, even when deposition is performed in relatively high vacuum conditions with C, N and O gas partial pressures of 5105 Torr. The carbon content C in the W lms (0.51%) was C a factor of 10 higher than the nitrogen content C . PreN sputtering of the high-purity (99.99%) W target before deposition reduces C by up to a factor of three, since N C does not change considerably due to the pre-sputterC ing. The total carbon contamination is increased linearly with the number of pulses and does not depend on the quantity of the ablated material. These results and the lack of detectable quantities of carbon, nitrogen and oxygen in the Au lms indicate that the main source of the gaseous lm contamination is an interaction of the lm surface and gases from a residual atmosphere of the vacuum chamber (adsorp-

G.E. Remnev et al. / Surface and Coatings Technology 114 (1999) 206212 Table 2 The density of metal lms deposited by the IPIB ablation process Film material [natural density (g/cm3)] Copper [8.9] Niobium [8.57] Molybdenum [10.22] Tantalum [16.5] Tungsten [19.23] Linear thickness t (nm) 16710 10410 7111 23015 27.83.9 Density r (g/cm3) 8.60.5 8.20.8 10.61.5 16.30.4 19.43

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tion) during breaks between pulses. The atmosphere composition is mainly dened by products (H, C ) of an erosion of a polyethylene cover of the anode. So the higher the deposition rate, the lower the gaseous content in the lms. The deposition rate can be considerably increased by using specially shaped targets (i.e. as a segment of a concave sphere), reducing the target substrate separation, etc. The specic density of the DLC, copper, niobium, molybdenum, tantalum and tungsten lms was measured by combination of nuclear interaction analysis methods (CPAA for carbon lms and XRF for metallic lms) and optical ones (ellipsometry and interferometry). The very high rate of HIPIB lm deposition allows the production of lms with specic density close to the density of the bulk materials, i.e. about 95100% for the metallic lms ( Table 2). The densities of the DLC lms obtained from the experiment were 2.12.9 g/cm3. This density is higher than the density of the initial graphite targets (r#1.6 g/cm3). HIPIB deposition is also characterized by narrow angular distribution of the ablated plasma species (Fig. 7), so the ablated material can be used very eectively. The angular distribution of the deposited lms was studied on the TEMP-2 accelerator (absorbed energy density Q=5 J/cm2 per pulse per 1 cm2 diskshaped targets of ZnS, Nb, Au and Pb). Film thickness (determined by the XRF technique mentioned above)

varies from 0.2 to 400 nm depending on the angle h of the substrate with respect to the target normal. The angular distribution in lm thickness is highly peaked and characterized by emh, where 3<m<4.3 (Fig. 7). Obviously, one can use such a specimen (obtained for the one HIPIB pulse) as an ideal one to study the lm growth mechanism, from low growth rates ( less than 12 nm) at the specimen edges to high rates (up to 100500 nm) in the middle of specimens. The angular distribution in combination with a wide beam cross-section allows the production of several ablated plasma jets of dierent materials in order to form chemical compounds and alloys unattainable otherwise. 2.4. Short pulsed ion implantation in semiconductors Research was carried out to show the possibilities of HIPIBs for radiation alloying of GaAs, Hg Cd Te 1x x (MCT ) and Si semiconductors, as well as dierences in characteristics of the alloying zone between HIPIB and conventional ion beam inuence. The samples were treated on the MUK-M accelerator by Cn+ and Aln+ under the following conditions: 510 A/cm2 ion current density, 50300 ns pulse duration, 100350 keV energy

Fig. 7. Angular distributions of ablated plasma products.

Fig. 8. Concentration depth proles of Al (a) and C (b) implanted into Si and measured by PIGE and SIMS.

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G.E. Remnev et al. / Surface and Coatings Technology 114 (1999) 206212 R.E. Muenhausen, K.C. Walter, M. Nastasi, H.K. Schmidt, N. Kumar, B. Lin, D.R. Tallant, R.L. Simpson, D.B. Williams, X. Qiu, J. Appl. Phys. 76 (1994) 5949. [9] K. Yatsui, X.D. Kang, T. Sonegawa, T. Matsuoka, K. Masugata, Y. Shimotori, T. Satoh, S. Furuuchi, Y. Ohuchi, T. Takeshita, H. Yamamoto, Phys. Plasmas 1 (1994) 1730. [10] A.N. Zakoutayev, G.E. Remnev, Yu.F. Ivanov, M.S. Arteyev, V.M. Matvienko, A.V. Potyomkin, Film Synthesis and Growth Using Energetic BeamsMater. Res. Soc. Symp. Proc. Vol. 388 , MRS, Pittsburgh, PA, 1995, pp. 388392. [11] E.I. Logachev, G.E. Remnev, Yu.P. Usov, Sov. Tech. Phys. Lett. 6 (22) (1980) 1404. [12] I. Krafcsik, L. Kiralynidi, R.P. Riedl, M. Fried, J. Gyulai, F. Pavlyak, Nucl. Instrum. Meth. Phys. Res. B21 (1987) 604. [13] G.E. Remnev, M.S. Opekunov, V.V. Vasilev, E.I. Lukonin, V.M. Matvienko, E.G. Furman, Instrum. Exp. Techn. 40 (5) (1997) 727731. [14] X. Kang, K. Masugata, K. Yatsui, Jpn. J. Appl. Phys. 33 (1994) 11551160. [15] G.E. Remnev, A.D. Pogrebnyak, Novosti Nauki i Techniki No. 2 , VINITI, Moscow, 1990, p. 30. [16 ] G.E. Remnev, V.A. Shulov, Laser Particle Beams 11 (4) (1993) 707. [17] R.W. Stinnett, D.C. McIntyre, R.G. Buchheit, E.L. Neau, J.B. Greenly, M.O. Thompson, Proc. 10th Int. Conf. on High-Power Particle Beams, NTIS, VA (1994) 215. [18] G.P. Davis, D.J. Rej, C.L. Ruiz, W.J. Waganaar, H.A. Johston, F.A Schmidlapp, Proc. 10th Int. Conf. on High-Power Particle Beams, NTIS, VA (1994) 226. [19] G.E. Remnev, I.F. Isakov, V.K. Struts, A.N. Sergeev, S.V. Rudnev, V.L. Kutuzov, Y.Y. Kulikov, M.N. Ovsyannikov, Proc. 10th Int. Conf. on High-Power Particle Beams, NTIS, VA (1994) 844. [20] V.L. Kutuzov, M.Yu. Ovsyannikov, A.D. Pogrebnyak, G.E. Remnev, Phys. Status Solidi (1989) 361. [21] G.E. Remnev, Yu.F. Ivanov, M.S. Opekunov, A.G. Puzyrevitch, Lett. JTPh 21 (24) (1995) 60. [22] G.E. Remnev, A.D. Pogrebnyak, V.A. Shulov, A.E. Strygin, Yu.D. Yagodkin, Yu.B. Alekseyev, Surface 12 (1990) 214. [23] V.A. Shulov, G.E. Remnev, N.A. Nochovnaya, V.A. Koshcheyev, I.G. Polyakova, I.F. Isakov, Surface 5 (1993) 127. [24] S.A. Chistyakov, A.D. Pogrebnyak, G.E. Remnev, Nucl. Instrum. Meth. Phys. Res. 42 (1989) 342. [25] I.F. Isakov, F.G. Kalmykov, V.P. Nesterenko, V.G. Padalko, A.D. Pogrebnyak, S.V. Plotnikov, G.E. Remnev, Sh.M. Ruzimov, Yu.G. Rousin, P.S. Simonov, S.A. Chistyakov, Authors Certicate No. 1468017, Deposition of Coatings on Metals, 14 July 1986, USSR. [26 ] V.A. Shulov, N.A. Nochovnaya, G.E. Remnev, I.F. Isakov, I.G. Polyakova, N.I. Shabanov, Sov. Tech. Phys. Lett. 17 (17) (1991) 38. [27] G.I. Zubarev, I.F. Isakov, N.A. Nochovnaya, G.E. Remnev, V.A. Shulov, Patent No. 2009269, Treatment for Improvement of operation characteristics of machine details, 10 February 1994, Russia. [28] D.J. Rej, G.E. Remnev, H.A. Davis, I.F. Isakov, Yu.F. Ivanov, G.P. Johnston, V.M. Matvienko, M. Nastasi, J.C. Olson, A.V. Potyomkin, H.K. Schmidt, B.S. Semukhin, D.R. Tallant, M.O. Thompson, W.J. Waganaar, K.C. Walter, D.B. Williams, A.N. Zakoutayev, Proc. 3rd Int. Conf. on the Applications of Diamond Films and Related Materials, NIST, Gaithersburg, MD (1995) 723726. [29] G.E. Remnev, A.N. Zakoutayev, Yu.F. Ivanov, V.M. Matvienko, A.V. Potyomkin, Lett. JTPh 22 (8) (1996) 68. [30] D.J. Rej, H.A. Davis, J.C. Olson, V.A. Ryzhkov, V.K. Struts, I.F. Isakov, V.A. Shulov, N.A. Nochevnaya, R.W. Stinnett, E.L. Neau, K. Yatsui, W. Jiang, J. Vac. Sci. Technol. A 15 (3) (1997) 10891097.

of accelerated ions and 10121013/cm2 ion uence per pulse. The total number of doping atoms can be varied by the number of shots. The depth concentration proles of Al and C implanted into semiconductors were measured by a conventional SIMS and conrmed for Al by the nuclear depth proling technique, PIGE, using the nuclear reaction 27Al( p,c)28Si resonance of 992 keV (Fig. 8). Monte Carlo simulations show that the depth proles of the implanted carbon are dened by direct ion implantation. The treatment of MCT single crystals by the Al beams allows the formation of n+n and np structures at a depth of 0.51 mm by an ion uence of 10121013/cm2, i.e. after action of one HIPIB shot.

3. Conclusion This paper presents research on industrial applications of HIPIBs investigated at the Nuclear Physics Institute of the Tomsk Polytechnic University and the Scientic Industrial Enterprise Linetron, N. Novgorod. It is obvious that the mentioned investigations include only a small part of the possible applications. Evidently, the industrial applications of HIPIB sources are very promising.

Acknowledgements The authors acknowledge Professor V.A. Shulov (Moscow Aviation Institute), Dr. N.A. Nochovnaya (Moscow Institute of Aviation Materials), Professor A.V. Voitsekhovskii and Dr. A.P. Kokhanenko (Siberian Physico-Technical Institute, Tomsk) for their help in joint research.

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