IEEE Transactions on Electrical InsDlation

vol EI-1I
s o--- . ,
June 1?s2
E: : E. T
: . s . I . TI s
s : IED. | E- - vI |
s E- | Is 1 I D- |
Is T
Is . \ ITE
\ E. II \ - | | - s 1 E\ Es T
Tadasu Tahuma, Tadasni Kawamoto
and - ideo : u inami
. entral | esearcn
Institute
ot
Electric
ower Industry
Komae- ni,
Tohyo, Japan
- | T| - . T
Tne electric
tield contijuration
nas been analyzed
numerically
by tne cnarje simulation
metnod near a
contact point wnere two media navinj surtace or
volume conductivity
meet an electrode
urtace con-
duction witn unitorm surtace
resistivity
moderates
tne tield sinjularity,
resultinj
in a unitorm
tield
tnroujnout
botn media tor very low resistivity
n
tne otner nand, volume conduction
majnities tne tield
sinjularity
it only one medium nas conductivity
: or tnese capacitive-resistive
tields,
impossible
to derive a simple analytical
ot tield strenjtn
sucn as can be derived
capacitive
cases
it appears
express ion
tor purely
Is T| . I . TI s
Electric tield strenjtn
E cnanjes as a tunction
ot
K-z m near a contact point wnere a straijnt
intertace
ot
two non-conductinj
dielectrics
meets a plane
electrode,
as snown in : ij 1 in tne tollowinj section In tnis
tunction, z is tne distance trom tne contact point,
and
tne exponent
m is a nejative or positive
constant
accordinj to wnetner tne permittivity
ratio ot tne two
dielectrics
. . /c- is jreater or less tnan unity
- t
least tneoretically,
a nejative value tor m results
in
intinite tield strenjtn
at tne contact point
\ eixner 1, analyzed tnis tield benavior
analytically
by expandinj tne tield as a power series in z ,
wnile
Tahuma et al 2, analyzed tnis benavior
numerically
by tne cnarje simulation metnod v eiss . ,
wno also
studied tne tield numerically
named tnis pnenomenon
Einbettunjsetteht
embeddinj
ettect) atter nis exper-
imental arranjement
ot a rod electrode embedded in an
insulatinj
material In Japan, it is now called
Tahaji-ettect
atter rot Tahaji - , wno was tne
tirst to treat tnis problem by a variant ot contormal
transtormation
- ll tnese analyses are based on tne assumption
tnat
botn media are pertect dielectrics
witn
intinitely
nijn resistivity
In practice, we must tahe tne ettect
ot conduction
into account because one ot tne dielec-
trics is inevitably
a solid witn more or less conduc-
tivity - owever, no jeneral
analysis ot tnis ettect
nas been reported to date
- s brietly described
later, a simple analytical
treatment
sucn as can be applied
to purely capacitive
electrostatic)
cases witn pertectly
non-conductinj
media seems invalid it conductivity
is included
v e
nave analyzed tne ettects
ot surtace
and volume con-
duction surtace
resistivity ps
and volume resistivity
p) on tield benavior
near sinjlular points
numerically
by tne cnarje simulation
metnod Tne roujn
results
obtained by tne tinite element metnod tor tne case in-
cludinj p: were described earlier 2, , and a part ot
tne results obtained by tne cnarje simulation
metnod
was mentioned : , Tnis paper, nowever,
describes
more jeneral results on tne ettects ot surtace
and
volume conduction
: IED. | E- - vI |
Is I | ED1
. - - . ITIvE
. - E
: or comparison
witn capacitive-resistive
cases, tne
tield in purely capacitive pertectly
non-conductinj)
cases is brietly described
: ij
1
is a two-dimensional
arranjement
wnere tne straijnt intertace
ot two dielec-
trics contacts a plane electrode
at anjle a
i u1s-?-. I/s2. ?
` , ii-t 2 ?; . ) -: r-c
1?s2
IEEE
2 ?
IEEE Transactions on Electrical Insulation vol EI-1I s o. June 1?s2
. oetticients an
and bn wnicn jive tne absolute value
ot tne tield strenjtn can be determined only numeri-
cally : ij 2 snows tne numerically calculated results
tor tne purely capacitive case ot tne arranjement also
snown in : ij 2) wnicn was used to investijate tne
ettect ot conduction in tne present study Tne linear
relation on a loj-loj scale ot tield strenjtn E to
distance z trom or , demonstrates tne tunction . )
,
electrode / /
: ij 1. traijnt intertace ot E- and
n|
mahinj contact
witn an electrode surtace in a two-dimensionaz
arranjement
It we assume polar coordinates ot r and ` witn orijin
at contact point , tne series solution wnicn satisties
tne boundary condition at ` ` and / is
- Earn sin n )
- n
1)
- z b rn sin{ n Ir-` )
| n
Tne boundary condition . a on tne intertace ot tne two
dielectrics leads to tne tollowinj transcendental eq ua-
tion wnicn jives non-intejer n tor a jiven E| /I-
and a
in radians)
` -
v
|
, |
/
-
x, -
/ x
o contour point,
x
complex
tictitious
cnarje
: ij . . . narje simulation metnod witn complex
tictitious cnarjes tor
an ac voz taje ot vcos 2irtt)
| /n- tan n a) + tan{ n I-a) `
2)
Tne smallest positive value ot n is predominant near
tne sinjlular point wnere r approacnes zero | y
solvinj 2) , it can be snown tnat tnis smallest posi-
tive solution
n,
is near unity and tnat, tor an acute
anjle ot a, n> 1D tor
. - /
1 and
ni l
tor . | /E- > 1
: ield strenjtn E near is jiven by
E
c
rnm
-1
.
Tnis means tnat E becomes intinite wnen
E| /I-
> 1 and
zero wnen
. | I. -
1
,
E
- -side IIv
E | -side x
E
- -side
` 1 D
II 1` -2 I ` --
- d t. distance trom or , )
: ij 2. : ield strenjtn on tne intertace near and ,
tor
c| IE-
- and a
n1/- - : )
. - D. I D- TI s \ ET- . : |
. - - . ITIvE-| E I TIvE : IED.
Tne present metnod is based on simulation ot a com-
plex ac tield witn a tield tormed by a tinite number
ot complex tictitious cnarjes , , , - ,
and
, |
wnicn are
situated inside tne electrode, medium - , and medium | ,
respectively : ij . illustrates sucn an arranjement
ot cnarjes and contourpoints
Tne tield in - is
jiven by tne ettect ot , and
, | ,
wnile tnat in | is
jiven by tne ettect ot , and , - Tne majnitudes ot
tne cnarjes are determined trom boundary conditions at
contour points on tne electrode surtace and tne medium
intertace Tne conditions on tne intertace include tne
ettect ot tne true cnarje caused by conduction : , Tne
tield distribution depends not only on permittivity and
resistivity in tne media, but also on tne treq uency t
ot an applied ac voltaje in tnese capacitive-resistive
tields
- ltnoujn not described in turtner detail nere, tnis
metnod can jive mucn more accurate tield strenjtns
tnan tne otner numerical metnods, sucn as tne tinite
ditterence and tinite element metnods Tnis property
is very important in studyinj tield benavior in tne
intinitesimal rejion near sinjular points - owever, it
snould be noted tnat tne metnod can be applied tor tne
case ot volume conduction only wnen volume resistivity
is unitorm in eacn medium, tnat is, wnen nm s law
nolds
In tne tollowinj sections, calculated results reter
to tne absolute value ot a complex value crest ot a
sinusoidal wave) tor t : ` - z : ield strenjtn E and
distance z trom a contact point are normalized as Ed/v
and l/d, respectively, wnere d is tne electrode separa-
tion and v is tne crest ot an applied voltaje Two
similar arranjements result in an identical tield dis-
tribution tor tne same treq uency wnen
p, d p)
is tne
same in botn arranjements
q | r, ` )
`

r
` :
d-I `
x
Tahuma Kawarmoto and : uinami. : ield benavior near sinjular points in composites
` vcos 2rttt)
,
| s -
E| , d
|
E- E| / - ,
` ` - - `
I T-,
1p
: ij - . - rranjement used
ot conduction
.
Ed
v
tor calcuz atinj tne ettect
sd
, -m
It

is
very
low
-- xl , -m) ,
tne
potential
distri-
bution is determined entirely by ps and is only propor-
tional to tne distribution ot ps alonj tne surtace
It tollows tnat constant p jives a unitorm tield dis-
tribution E v/d tnroujnout in media - and | - s ps in-
creases, tne capacitive tield distribution becomes pre-
dominant over tne resistive one Tnus, E increases
near as snown in : ij and decreases near ,
Tne tield seems to attain tne value in tne purely
capacitive case witn
psd
ot about - xl ` m in most
parts ot tne rejion in : ij : Tnis, nowever, does not
nold true tor tne tield distribution very near tne
sinjular points : ij snows tne surtace tield
strenjtn near and , replotted on a loj-loj scale
Two important points become apparent in tnis : ijure
: irstly, surtace conduction jenerally mahes tne tield
unitorm only between some tixed point and tne sinjular
point econdly, tnis ettect occurs nearer to tne
sinjular point as p: increases : or example, even p: d
ot more tnan - x1` 1` ` m intluences tne tield wnen z /d
` ` ` . : It tollows tnat tield strenjtn is intinite
at only tor intinitely nijn p: In otner words, tnis
case does not occur in practice - s snown in : ij ,
tne ettect ot surtace conduction is similar near
anotner sinjular point , urtace conduction moderates
decreases) tne tield sinjularity tnere, and nijner
surtace resistivity produces an ettect only as tne
distance trom , becomes snorter
I | : - . E Is TE| : - . E) . s . I . TI s
: ij - is tne calculated two-dimensional arranjement
consistinj ot two media, - jas) and | solid) , between
plane-parallel electrodes
Tne ratio ot permittivity
. | /. -
is - In tnis
section, volume resistivities - and
|
are botn
assumed to be intinitely nijn, wnile surtace resistiv-
ity ps is considered tinite and unitorm alonj tne sur-
tace, irrespective ot tne tield strenjtn
: ij : snows tne crest value ot tne tield strenjtn
on tne - -side ot tne boundary surtace tor several
values ot p: witn t : ` - z) : ield strenjtn E relative
to z cnanjes trom a linear, unitorm cnaracteristic to a
sinjular one on a linear scale as p: increases Tnis
result is explained as tollows
2 - - / 1` ?
`
:
Ed-
v
2
` : 1 d 1`
` 2
` 1
sd
- / 1`
1` 1` 1`
: ij . Ettect ot p: on surtace tield strenjtn near
and , on a loj-loj scale z is distance trom or
, )
` :
: ij : . : ield strenjtn E on tne boundary surtace on
tne - -side near in : ij - includinj surtace
resistivity

I I
2I1
I
IEEE Transactions on Electrical Insulation vol EI-1I
s o-
June 1?s2
1` , -m
1` ?
v DI \ E . s . I . TI s
In tnis section, surtace resistivity
s
is assumed
to be intinitely nijn in : ij - volume resistivity
is tahen to be tinite and unitorm in medium | , wnile
medium - jas) is considered to be non-conductinj
-
is intinite) | is desijnated p tor simplicity
: ijs Ia and Ib snow tne calculated surtace tield
strenjtn E near on tne - -side and , on tne | -side
tor : ` - z, respectively - s p decreases, E is nijner
near and lower near , tnan in tne purely capacitive
case witn intinite p
I nitorm volume resistivity otten jives mucn tne same
tield distribution as unitorm surtace resistivity
: ij sa, a resistive voltaje divider witn a snieldinj
electrode, is an example wnere tnis can occur : , In
tne case ot : ij sb, wnere a semi-conductinj spnere
exists in a unitorm tield, tne capacitive-resistive
tield includinj p is identical to tne tield includinj
s it
pod/2
p
` vcos 2, Itt)
` ` 1 ` ` 2 ` ` .
t
/d
` ` -
a near on - -side
I 1 ` ? ,
m
Eccos 2, Ttt)
. -
s
-
` `
a resistive voltaje
divider
b semi-conductinj
spnere in a unitorm
tield
` 1
1 I
Il I
` ` 1 ` ` 2 ` ` .
e d
` ` -
b near , on | -side
: ij I. : ield strenjtn E on tne boundary surtace
near and , in : ij - incz udinj voz ume resistivity

: ij s. Two arranjements wnere p and p produce a
similar ettect on tiez d distribution
. ontrary to tnese cases, tne ettect ot conduction is
very ditterent between p and

near tne sinjular
points in : ij - Tnis can be more clearly seen in
: ij ?, wnere tne tield strenjtn is jiven in relation
to p or
psd
tor tnree points on tne surtace near
Tnis result applies tor t : ` - z, as described above
It t is a variable, nijn resistance and low resistance
tields correspond to nijn-treq uency and dc tields,
respectively - s described in tne previous section,
decreasinj psd decreases E near , eventually resultinj
in a unitorm tield tor very low
ps
n tne otner nand,
decreasinj p jives a mucn nijner strenjtn tnan in tne
purely capacitive tield Tnis result is explained as
tollows
It tne arranjement includes volume resistivity, tne
tield can be expressed as tne complex tield tor a
steady ac voltaje simply by replacinj E witn complex
permittivity e
-/+ 1/ iwp)
wnere w 2It and i -1T
- )
Ed
v
lo`
:
`
` . h
Ed
v
` 2 h
-
-1I2
Tahumaa, Kawamoto and : Duinami. : ield benavior near si-njular points in composites
,
p` s
| 1
p.
d i
2
I
p
2`
1:
1`
1` 1` I 1` s 1` ? 1` 1`
p or sd in , 2, m
: ij ?. Ettect ot surtace or voz ume resistivity on E
on tne intertace on tne - -side arameter z is tne
distance trom )
: or E| /E- - and ol I1/- , 2) jives n1 ` s` , ie
m -` 1?- n tne otner nand, it - / | is intinitely
larje, I) results in n1 2/. , i e m -1/. Tne
tollowinj are tne exponents obtained trom numerically
calculated relations ot loj E to loj z near .
-` . 2s on tne side ot medium -
-` . - - on tne side ot medium |
Tnese values ajree tairly well witn tne analytical
value ot -1/. Tne slijnt ditterence is mainly due to
tne readinj error ot tne slope on a loj-loj scale
: or jeneral arranjements containinj tinite volume
resistivity - and | as in : ij -
p
is assumed to be
intinitely nijn) , we can summarize tield benavior near
in capacitive-resistive tields as tollows
a
p- / |
> E| /-
Tne tield strenjtn is nijner tnan in tne electro-
static purely capacitive) tield
b
p- / |
| /E -
Tne tield is tne same
. - I | . | /. -
Tne tield strenjtn is lower tnan in tne purely
capacitive tield
: urtnermore, in tne stationary current tield tor dc
or tor very low resistivity, tne tield strenjtn at
is tneoretically intinite wnen - > | , it is v/d wnen
- | ,
or zero wnen
d
|
: ield benavior near anotner sinjular point , is
described in tne tollowinj section
It p is sutticiently low, tne tield becomes tnat ot
a stationary electric current, wnicn is tne same as an
electrostatic tield wnere E is replaced by p-1 Tnat
is, tne tield now is not complex and jiven by
div E/p)

: )
Tnis eq uation results in Daplace s eq uation it p is
unitorm in eacn medium, ie, it nm s law nolds.
div E ` )
Tne boundary conditions are tne same as tnose in tne
purely capacitive electrostatic) tield - s a result,
tield sinjularity occurs ajain in tne stationary elec-
tric current tield at a contact point Tnis sinju-
larity is more enlarjed in tne current tield tnan in
tne electrostatic tield because - / | is intinite in-
stead ot
E| /I-
- Tne same transcendental eq uation
witn a ditterent coetticient tnan 2) jives exponent m
ot tield strenjtn E

Kz m
Ed
v
- -side
p 21` I T
1` -,
, / 1` :
-. lo-2 1-
lo-2
lo-1
- tan nat) + tan{ n Tr-a) `

|
I)
: ij 1` . : ield strenjtn on tne boundary surtace on a
z oj- z oj scaz e near , tor : ij -
Tne smallest positive solution n1 m+1 as
explained
above
2: :
d
Ev

| -side
-
I .
IEEE Transactions on Electrical Insulation vol EI-1I
s o.
June 1?s2
: IED. | E- - vI | s E- | , : | v DI \ E . s . I . TI s
: ij 1` snows surtace tield strenjtn as a tunction
ot tne distance trom , near , on botn sides ot tne
surtace witn p as a parameter Tne exponent m wnicn
represents tne slope on a loj-loj scale is about ` 1?
on botn sides - and | wnen p is very nijn Tnis, ot
course, ajrees witn tne analytical value jiven trom
2) in tne purely capacitive tield
n tne otner nand, tne exponent tor very low p is
` . . 2 on tne - -side and ` ?s: on tne | -side : ij 11
snows E on tne | -side near , tor p 1` : , -im on a linear
scale - s is clear in : ij 12, I) jives tne smallest
positive solution
n1 - /.
tor
- I |
-
and a IT/- In
order to explain tne ditterence between tne numerically
obtained exponents in tne two media, we must tahe tne
tirst two terms in an expansion ot tne potential as
-

a, 1
rnt1 sin{ n1 Tr-` )
+
a2rtn2 sin{ n2 t- u)
s)
b, rnl
sin n1` )
+
b2
rn2
sin n2` )
Eq uation I) jives n2 2 as tne second smallest solu-
tion tor - / |
| y ditterentiatinj
t-
and - | witn
r and ` and substitutinj
nl,
n2, and a TE/- , tne two
components ot tne tield strenjtn on tne surtace are
expressed as tollows
a) vertical component En.
E -- /. a1 r /. cosTr
E - /. b1 r / cos Tl/. )
b) Tanjential component
E| t
Et-
2
a2
r
sin . In/2)
Et| - /. b,
r
1/. sin Ir/. )
+ 2
b2
r
sin ur/2)
Tne boundary condition
En- /p-

En| -/p
tor very low
resistivity yields E
| |
` tor
| I -

, tnat is,
b ` It tollows inat tne tield cnanjes near , as
a tunction ot r1/. on tne - -side and as r on tne | -side
Tnis ajrees witn tne numerical results as described
above
It - and
|
are not extremely ditterent and sutti-
ciently low in comparison to tne permittivity in - ) ,
botn exponents n1 and n2 may intluence tne tanjential
component ot tne tield strenjtn Tne second smallest
exponent n2 is predominant in tne rejion remote trom
, , wnile tne ettect ot n1 prevails over tnat ot n2 as
tne distance trom , becomes snorter, so tnat tne ex-
ponent eventually ajrees witn tnat ot tne normal com-
ponent : ij 1. snows sucn a cnanje ot slope in tne
numerically calculated Et as a tunction ot tne dis-
tance trom , It snould be noted tnat tne same pnenom-
enon also occurs in purely capacitive arranjements
consistinj ot only
-
and
E| - owever, an extreme
ditterence ot medium parameters as described above
otten nappens tor p, but not tor .
- s - D1TI. - D T| E- T\ Es T : v DI \ E . s . I . TI s
- s already described, tne tield includinj volume con-
duction is expressed as a complex tield wnere E is re-
placed by tne complex permittivity . as in - ) It we
expand t- and - | as a power series in r, tney may be
expressed as
` ` .
:
Ed
v
` ` 2
v
` ` 1
:
` ` ` 1 ` ` 2 ` ` . ` ` -
. /d
: ij 11. : ield strenjtn on | -side near
scale tor p

1` : , -m
, on a z inear
` - /
` `
-
|
,
: ij 12. . ontact point , in stationary electric
tield
- > | J
n
a-

E
anr sin n )
|

bn
rn sin n TT-` )
?)
It only tne smallest positive value ot n nl is pre-
dominant near tne sinjular point,
, -

. i
rn,
sin n1
` )
1` )
, |
bD rm sin{ n1 nT-` )
Imposinj
tne
boundary conditions at
> ia
leads to
1
. E +
) tan na) + .
+
) tan{ n Tr-)

`
| z ,
p|
- -w
-
1 1)
- owever, it can be easily snown tnat tnis eq uation nas
no real solution except tor special cases, as a)
. - - and
E| > > | , and b)
E- - E| | -
+ a a
11
-
TahDtma,
vawamoto
and
: Dinami. : ield benavior near sinjular points in
composites
2I:
s eitner can tne treatment tnat employs tne tirst
two terms in tne expansion ot tne potential in ?)
jive a reasonable result It seems tnat an intinite
series is needed to express tne tield benavior cor-
rectly in capacitive-resistive cases
1 En - - side)
Et
-
and
Ed | side)
v
En
E -side)
1` -
/1v
- | d
1 z- -
,
n--
D
1` 1` - 2 1` - 1
: ij 1. . . omponent ot tield strenjtn on tne inter-
tace near , tor | I -
1/: z is tne distance
trom , )
| E: E| Es . E
1, J \ eixner, Tne | enavior ot
Electromajnetic
: ields at Edjes, Inst \ atn ci | es | ept
E\ -22, s ew 1orh I niv, s ew 1orh, s 1, 1?: - -12) ,
and | \ ittra and v Dee, - nalytical Tecn-
niq ues in tne Tneory ot 1 uided v aves Tne
\ acmillan
. omp, s ew 1orh 1?I1) , pp - -11
2, T Tahuma, T Kouno and - \ atsuba, : ield | e-
navior near injular oints in . omposite . ielec-
tric - rranjements IEEE Trans Electr Insul,
vol EI-1. , s o , pp - 2 -- . :
1?Is)
. , v eiss, : eldstarheettehte bei z weistottdieleh-
triha International - ijn voltaje ymposium,
\ unicn, pp I. -s` 1?I2-. ) in 1 erman)
- , J Tahaji, n tne : ield at a Tip ot a . onductor
or . ielectric v aseda . enhihojahhai z assni
Journal ot v aseda Elect Enj . ept) , pp ?-II
1?. ?) in Japanese)
: , T Tahuma and T Kawamoto, : ield . alculation
Includinj urtace | esistance by . narje imulation
\ etnod International - ijn voltaje ymposium,
\ ilan, s o 1. ` 1
1?I?-s)
\ anuscript was received 1? \ arcn 1?s1, in revised
torm 1- ctober 1?s1
. s . DI I s
1) Tne tield benavior near a contact point wnere tne
straijnt intertace ot two media meets an electrode nas
been studied numerically by tne cnarje simulation
metnod in capacitive-resistive tields Tne two media
correspond to a jas and a solid
2) urtace conduction by unitorm surtace resistivity
mahes tne sinjular tield distribution more unitorm
- ijner resistivity p: intluences tne rejion closer to
tne contact point Tnis means tnat intinite
strenjtn
occurs only wnen
p
is intinite
. ) volume conduction by unitorm volume resistivity
majnities tne tield sinjularity it only one medium nas
tinite resistivity
- ) - simple analytical expression ot tield strenjtn
wnicn can be applied to purely capacitive cases seems
impossible to derive tor arranjements includinj volume
resistivity
Il
t