Mathematical model for the common emitter amplifier for group 2 section 2

Amplifier Specifications:
Unloaded Voltage Gain = Avo
Output Impedence = Rout
Bias Stability wrt beta = percentS
Output Peak Voltage Swing = Vout
3-dB Cut Off Frequency = F
3 dB
100Hz
Signal Source Impedence = Rsignal
Load Resistance = RL
Transistor Specifications:
Beta =
Early Voltage = VA
VBEQ = Vbeq
IS = IS
VCESAT = Vcesat
KT/q = kt
Input Parameters :
Avo (195 (2 20)); Rout 1000; percentS .001; Vout 3; F3dB 20; Rsignal 0;
RL Rout; 120; VA 80; Vbeq .7; IS 1 10
14
; Vcesat .5; kt .0259;
Avo
155
Above the group is initiallizing the variables used in the mathematical model
Start of Equations:
Icq
Avo kt
Rout
;
EngineeringForm[Icq]
Vceq Vcesat Vout
4.0145 10
3
3.5
Vceq 6;
The group decided to increase the VCEQ to 6 to give us more room by moving farther from the VCESAT area which can affect
the circuit
eff 1
Vceq
VA
Ibq
Icq
eff
;
EngineeringForm[Ibq]
Ieq Icq Ibq;
EngineeringForm[Ieq]
hoe
Icq
Vceq VA
;
EngineeringForm[hoe]
Hoe
1
hoe
;
EngineeringForm[Hoe]
hfe eff
hie
kt
Ibq
Rb 10 hie // N;
EngineeringForm[Rb]
129
31.1202 10
6
4.04562 10
3
46.6802 10
6
21.4223 10
3
129
832.258
8.32258 10
3
The calculations for Rb computed 8.32k the group choice the next highest standard resistor value for Rb which is 8.2k.
Rb 8200 // N;
Rin
1
Rb

1
hie
1
756.598
The input resistance Rin as seen by the circuit
percSB percentS;
2 form ulas - lab1. nb
ListPlot_Table_
1
percSB

Rb x3
Rb (eff 1) x3
, {x3, 100, 1000}_,
PlotRange All, AxesOrigin {0, 0}_
200 400 600 800
100
200
300
400
This table shows the change in the beta-f factor in relation to changes in the emitter resistance
ListPlot_Table_
1
x5

Rb RE
Rb (eff 1) RE
100, {x5, 100, 400}_,
PlotRange All, AxesOrigin {0, 0}_
50 100 150 200 250 300
0.02
0.04
0.06
0.08
0.10
0.12
This table shows the change in the stability factor as beta f changes within the circuit.
form ulas - lab1. nb 3
ListPlot_Table_
1
percSB

RE x4
x4 (eff 1) RE
, {x4, 10, 10 000}_,
PlotRange All, AxesOrigin {0, 0}_
2000 4000 6000 8000 10000
20
40
60
80
100
120
140
This graph shows the relationship of changes in base resistance RB on the beta-f factor of the circuit.
solving for RE
Siceq PerSb
0.118363
SiceqMin
1
(eff 1)
// N
0.00769231
x
RE
Rb
// N
0.0612791
y1 (eff 1) x
7.96628
Siceq2[y1_] :
1
y1
(eff1)
1 y1
Siceq2[10] // N
0.0979021
4 form ulas - lab1. nb
LogLogPlot[{Siceq2[y1], SiceqMin}, {y1, .1, 10 000}]
1 10 100 1000 10
4
0.01
0.02
0.05
0.10
0.20
0.50
1.00
Clear[y1, RE]
Design Approximation Rule
y2 Solve_(eff 1)
RE
Rb
10, RE_ // N
RE 640.199
Solve_percSB
1

1 x3
1 (eff 1) x3
, x3_
x3 0.060274
REE .06 Rb
499.355
Solve_percSB
1

Rb x2
Rb (eff 1) x2
, x2_
x2 501.635
PerSb
1

Rb RE
Rb (eff 1) RE
// N
EngineeringForm[PerSb]
0.000986361
986.361 10
6
RE 510;
The emitter resistance of the circuit has been calculated a few different ways above two of the answers came within a few ohms
of each other. The other way which uses the design approximation rule is as much as 150 ohms higher. Looking at the stability to
RE graph above the group choice to keep the emitter resistance at a standard resistor value that was close to the lower calculated
value.
VBB Rb Ibq Vbeq RE Ieq
3.02227
form ulas - lab1. nb 5
VBB 3;
The group choice to round the base thevienon voltage to 3 volts
Rc
1
Rout
hoe
1
;
EngineeringForm[Rc]
1.04897 10
3
Rc 1100 // N;
The resistance value for the collector resistance was first choosen to be 1k the nearest small standard resistance value. After
trying this initial value in the live circuit in the lab and the simulations. The group decided to increase the collector resistance to
1.1k which is the next highest standard resistance value.
Av
hfe
1
1
Hoe

1
Rc

1
RL
hie
79.2526
VCCmin RE Ieq Vceq Rc Icq
12.4792
VCC 15;
The collector voltage minimum is calculated above. The group rounded that value to 13 volts for the circuit.
Rb1 Rb
VCC
VBB
// N;
EngineeringForm[Rb1]
41.3063 10
3
Rb1 39 000 // N;
Rb2
1
Rb

1
Rb1
1
// N;
EngineeringForm[Rb2]
10.4226 10
3
Rb2 10 000 // N;
Rbb
Rb1 Rb2
Rb1 Rb2
;
EngineeringForm[Rbb]
7.95918 10
3
6 form ulas - lab1. nb
PerSb2
1

Rbb RE
Rbb (eff 1) RE
// N
EngineeringForm[PerSb2]
0.000950408
950.408 10
6
The Rb equivent using Rb1 & Rb2 standard values choosen.
voltage divider to get thevinen equivalent
10 000
10 000 39 000
15 // N
3.06122
The section just above is calculating the voltage divider for using voltage from collector VCC to feed the required voltage to the
base of the transistor. The values were changed to the nearest standard resistor values and the base voltage was calculated based
on these standard resistor values.
Capacitance are calculated assuming all three contribute equally
K3caps 1.96
1.96
Frc
F3dB
K3caps
10.2041
ReqB Rsignal Rin
756.598
CB
1
2 Frc ReqB
;
EngineeringForm[CB]
20.6149 10
6
ReqC Rout RL
2000
Cc
1
2 Frc ReqC
;
EngineeringForm[Cc]
7.79859 10
6
ReqE
1
RE

hfe 1
hie
1
]
1
Rb

1
Rsignal.01

1
6.32269
form ulas - lab1. nb 7
CE
1
2 Frc ReqE
;
EngineeringForm[CE]
2.46686 10
3
The above calculated capacitor values allowed the group to find the nearest standard capacitors that would fit the circuit keeping
in mind that the group wanted to keep the capacitance as high as possible so the AC circuit would see the capacitors as a short
circuit.
Print["Summary of Component Values"]
Print[TableForm[{{"ICQ ", EngineeringForm[Icq]},
{"Rc ", EngineeringForm[Rc]}, {"RB1 ", EngineeringForm[Rb1]},
{"VCEQ ", Vceq}, {"Rb ", EngineeringForm[Rb]}, {"RB2 ", EngineeringForm[Rb2]},
{"Cb ", EngineeringForm[CB]}, {"Cc ", EngineeringForm[Cc]} ,
{"Ce ", EngineeringForm[CE]}, {"Vcc ", VCC}, {"Re ", RE}, {"Vbb ", VBB}}]]
Summary of Component Values
ICQ 4.0145 10
3
Rc 1.1 10
3
RB1 39. 10
3
VCEQ 6
Rb 8.32258 10
3
RB2 10. 10
3
Cb 20.6149 10
6
Cc 7.79859 10
6
Ce 2.46686 10
3
Vcc 15
Re 510
Vbb 3.02227
Summary:
ICQ = 4.01 mA Rc = 1.1k RB1 = 39 k
VCEQ = 6 V Rb = 8.2 k RB2 = 10 k
Cb = 22 F Cc = 6.8 F Ce = 2.2 mF or 2200 F
Vcc = 13 V Re = 510 Vbb = 3V
The above values are being shown in standard engineering notation
8 form ulas - lab1. nb