ASSIGNMENT 2

1. A bar of intrinsic silicon having a cross-sectional area of 2.5 10

16 3 2 4

m has an electron
2

density of 1.5 10 electrons/m . If the electron mobility is 0.14 m / V-sec and hole mobility is 0.05 m / V-sec, what is the length of the bar in order to have a current of 1.2 mA when 9 Volts are applied across its ends? 2. A sample of germanium is doped with 10 / cm of donor impurity and 7 10 / cm of
14 3 3 3

acceptor impurity. Resistivity of pure Ge is 60 ohms-cm at room temperature. If the total current density of the sample is 52 mA/cm determine the applied electric field. (Assume : n = 3800 cm / V-s and p = 1800 cm / V-sec).
2 2 2

3. A bar of silicon 0.1 cm long has a cross-sectional area of 8 10

m , heavily doped with

2

phosphorus. What will be the majority carrier density resulting from doping if the bar is to have a resistance of 1.5 k ? Given for silicon at room temperature : n = 0.14 m / Vsec, p = 0.05 m / V-sec, ni = 1.5 10 / cm .
2 10 3

4. Derive an expression for conductivity of extrinsic semiconductor. Prove that the resistivity of intrinsic germanium is 45 -cm. Given for Ge at room temperature : Intrinsic concentration = 2.5 10 / cm
13 3 2

Mobility for hole = 1800 cm / V-s Mobility for electrons = 3800 cm / V-s Charge on an electron = 1.6 10
19 2

5. The hole concentration in a semiconductor specimen is shown in Fig. P. 2.13.1(a). Find the expression and sketch the hole current density Jp (x) for the case in which there is no externally applied electric field.

6. Consider the step graded Germanium semiconductor with ND = 10 NA with NA corresponding to 1 acceptor atom per 10 Germanium atoms. Calculate the contact potential Vo at room temperature. Assume for Ge atoms per cm = 4.4 10 and ni = 2.5 10 per cm . 7. A diode operating at 300K has V (forward) of 0.4 V across it when the current through it is 10 mA and 0.42 V when the current is twice as large. What values of I o and allow the diode to be modelled by the diode equation ?
3 22 15 3 8

8. The circuit shown in Fig. P. 3.6.7 uses identical diodes D 1, D2 and D3. For each diode assume reverse saturation current of 10 600 mV across D3.
13

A at T = 300 K and = 1. Calculate Vin to get

9.

A silicon diode has internal contact potential of 0.5 V. A reverse bias of 4.5 V is applied externally. The diode is so doped that NA << ND. Resistivity of p side is 5 cm. The diode has a circular cross section with diameter D. The junction capacitance
2

measured is 100 pF. Calculate D.

(Given r for Si = 12, p = 500 cm / V sec).