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Product specification
BU4508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BU4508DX
Cisol
22
pF
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS
UNIT mA mA V V V V V
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 6 V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 500 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V Diode forward voltage IF = 5 A
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time IF = 4 A; dIF/dt = 50 A/s VF = 5 V CONDITIONS ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) 2.75 300 19 500 3.75 400 s ns V ns TYP. MAX. UNIT
ts tf Vfr tfr
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BU4508DX
TRANSISTOR IC DIODE
ICsat
Lc
IB IB1 t 20us 26us 64us VCE IB2
-VBB
t
ICsat 90 % IC
100
hFE
VCE = 1V
BU4508DF/X/Z
Ths = 25 C Ths = 85 C
10 % tf ts IB IB1
10
t
1 0.01
- IB2
0.1
IC / A
10
100
hFE
VCE = 5V
BU4508DF/X/Z
Ths = 25 C Ths = 85 C
10% t fr
V F time
10
5V
V F time
fr
1 0.01
0.1
IC / A
10
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BU4508DX
10
VCESAT \ V
BU4508DF/X/Z
PD%
Ths = 25 C Ths = 85 C
0.1
0.01 0.1
10
IC / A
100
20
40
60
80 Ths / C
100
120
140
VBESAT / V 1.2
BU4508AF
1.1
1
0.5 0.2
1
0.1
0.1 0.05
0.9
IC = 5 A
0.02
0.8
0.01
P D
tp
D=
tp T t
1.0E+01
0.7
0
T
1.0E-05 1.0E-03 1.0E-01
0.6
IB / A
0.001 1.0E-07
t/s
10
ts/tf/ us
BU4508D ts/tf
0.5
1.5
2.5
IB / A
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BU4508DX
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 5.45 3.3
25
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BU4508DX
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
February 1999
Rev 1.000
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