BIASING IN BJT AMPLIFIER CIRCUITS The biasing means that of establishing a constant dc current in the collector of the BJT.

This current has to be calculable, predictable, and insensitive to variations in temperature and to the large variations in the value of encountered among transistors of the same type. Classical Discrete-Circuit Bias Arrangement or Voltage Divider Bias Figure 1.15 (a) shows the arrangement most commonly used for biasing a discrete-circuit transistor amplifier if only a single power supply is available.

Figure: 1.15 (a) Voltage divider Bias Circuit. (b) Voltage Divider Bias Circuit Base replaced with Thvenin equivalent.

Figure 1.15 (b) shows the Voltage Divider Bias Circuit Base replaced with Thvenin equivalent,

--------13

--------14 Apply KVL at base loop and

--------15 To make IE insensitive to temperature and variation, we design the circuit to satisfy the following two constraints:

--------16

--------17 As a rule of thumb, one designs for

Typically one selects R1 and R2 such that their current is in the range of IE to 0.1 IE.

A Two Power-Supply Version of the Classical Bias Arrangement

Figure: 1.16 Biasing the BJT using Two Power Supplies.

Figure 1.16 shows the biasing arrangement using two power supplies. Apply KVL at base loop, and then IE is

--------18 This equation is identical to Eq. (15) except for VEE replacing VBB. Thus to make IE insensitive to temperature and variation, we design the circuit to satisfy the following two constraints:

--------19

--------20 As a rule of thumb, one designs for

The Resistor RB is needed only if the signal is to be capacitive coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total independence of the bias current. Biasing Using a Collector-to- Base Feedback Resistor

Figure: 1.17 (a) A BJT biased by a feedback resistor RB (b) Analysis of the circuit.

Figure 1.17 (a) shows the biasing arrangement using feedback resistor RB. Apply KVL at output loop, and then

--------21

--------22 This equation is identical to Eq. (15) except for VCC replacing VBB and RC replacing with RB. Thus to make IE insensitive to temperature and variation, we design the circuit to satisfy the following two constraints:

--------23

--------24

SMALL-SIGNAL OPERATION AND MODELS We consider first the dc bias conditions by setting the signal vbe to zero. The circuit reduces to that in Fig. 1.18(b), and we can write the following relationships for the dc currents and voltages.

RC vbe VBB VCC vBE

Figure: 1.18 (a) Transistor amplifiert.

Figure: 1.18 (a) Transistor Amplifier..

RC VCC VBB

Figure: 1.18 (b) DC Analysis Circuit.

--------25 --------26 --------27 --------28 The Collector Current and the Transconductance If a signal vbe is applied the total instantaneous baseemitter voltage, --------29

--------30 If vbe << VT then

--------31

--------32 Thus the collector current is composed of DC current IC and signal component ic. --------33 --------34

--------35 Where gm is called the Transconductance. The small-signal approximation implies keeping the signal amplitude sufficiently small so that operation is restricted to an almost-linear segment of the iC vBE exponential curve. The analysis above suggests that for small signals (vbe<<VT), the transistor behaves as a voltage-controlled current source.

Figure: 1.19 Linear operation of the transistor under the small-signal condition.

The Base Current and the Input Resistance at the Base The total instantaneous base current,

-------36 -------37

-------38

-------39

-------40

-------41

-------42 The Emitter Current and the Input Resistance at the Emitter

The total instantaneous emitter current,

-------43 -------44

-------45

-------46

-------47 The relationship between rb and re can be found by combining Eqs. (40) and (45) as -------48

-------49

-------50

Voltage Gain

-------51 The Hybrid-Model An equivalent circuit model for the BJT is shown in Fig. 1.20. This is the most widely used model for the BJT.

rb

gm vbe

E
Fig. 1.20 Hybrid Model

The T Model

Figure 1.21

Two slightly different versions of what is known as the T model of the BJT. The

circuit in (a) is a voltage-controlled current source representation and that in (b) is a current- controlled current source representation. These models explicitly show the emitter resistance re rather than the base resistance rb featured in the hybrid- model. Application of the Small-Signal Equivalent Circuits The process consists of the following steps: 1. Determine the dc operating point of the BJT and in particular the dc collector current IC. 2. Calculate the values of the small-signal model parameters:

3. Eliminate the dc sources by replacing each dc voltage source with a short circuit and each dc current source with an open circuit. 4. Replace the BJT with one of its small-signal equivalent circuit models. 5. Analyze the resulting circuit to determine the required quantities (e.g., voltage gain, input resistance).