Chapter 02

Chapter 2
Slide #1
Dr. Alan Tribble
University of Iowa
Electrical Engineering Materials and Devices
Fall 2002
55:072
Electrical Engineering
Materials and Devices
Chapter 2:
Energy Bands and Carrier
Concentration in Thermal Equilibrium
Chapter 2
Slide #2
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2 Overview
2.1 Semiconductor Materials
2.2 Basic Crystal Structure
2.3 Basic Crystal Growth Technique (SKIP)
Well Come Back to This in the Manufacturing Section
2.4 Valence Bonds
2.5 Energy Bands
2.6 Intrinsic Carrier Concentration
2.7 Donors and Acceptors
Chapter 2
Slide #3
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2 Learning Objectives
Develop an Understanding of
Energy Structure of Semiconductors
Charge Carrier Properties of Semiconductors
The Factors That Influence Them
Chapter 2
Slide #4
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2
Slide #5
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.1.
Typical range of conductivities for insulators, semiconductors, and conductors.
R = l/A
C = 1/R = A/l
From: Sze, S. M., Semiconductor Devices, 2nd Ed., John Wiley & Sons, Inc., 2002.
Chapter 2
Slide #6
Dr. Alan Tribble
University of Iowa
Fall 2002
The Periodic Table
II III IV V VI
1
H
1.008
2
He
4.003
3
Li
6.939
4
Be
9.012
5
B
10.81
6
C
12.01
7
N
14.01
8
O
16.00
9
F
19.00
10
Ne
20.18
11
Na
22.99
12
Mg
24.31
13
Al
26.98
14
Si
28.09
15
P
30.97
16
S
78.96
17
Cl
32.06
18
Ar
35.45
19
K
39.10
20
Ca
40.08
21
Sc
44.96
22
Ti
47.90
23
V
50.94
24
Cr
52.00
25
Mn
54.94
26
Fe
55.85
27
Co
58.93
28
Ni
58.71
29
Cu
63.54
30
Zn
65.37
31
Ga
69.72
32
Ge
72.59
33
As
74.92
34
Se
78.96
35
Br
79.91
36
Kr
83.80
37
Rb
85.47
38
Sr
87.62
39
Y
88.91
40
Zr
91.22
41
Nb
92.91
42
Mo
95.94
43
Tc
98.91
44
Ru
101.1
45
Rh
102.9
46
Pd
106.4
47
Ag
107.9
48
Cd
112.4
49
In
114.8
50
Sn
118.7
51
Sb
121.8
52
Te
127.6
53
I
126.9
54
Xe
131.3
55
Cs
131.9
56
Ba
137.3
57
La
138.9
72
Hf
178.5
73
Ta
181.0
74
W
183.9
75
Re
186.2
76
Os
190.2
77
Ir
192.2
78
Pt
195.1
79
Au
197.0
80
Hg
200.6
81
Tl
204.4
82
Pb
207.2
83
Bi
209.0
84
Po
(210)
85
At
(210)
86
Rn
(222)
87
Fr
(223)
88
Ra
(226)
89
Ac
(227)
104 105
Lanthanides
58
Ce
140.1
59
Pr
140.9
60
Nd
144.2
61
Pm
(145)
63
Sm
150.4
63
Eu
152.0
64
Gd
157.3
65
Tb
158.9
66
Dy
162.5
67
Ho
164.9
68
Er
167.3
69
Tm
168.9
70
Yb
173.0
71
Lu
175.0
Actinides
90
Th
232.0
91
Pa
(231)
92
U
238.0
93
Np
(237)
94
Pu
(242)
95
Am
(243)
96
Cm
(247)
97
Bk
(249)
98
Cf
(251)
99
Es
(254)
100
Fm
(253)
101
Md
(256)
102
No
(253)
103
Lr
(257)
Chapter 2
Slide #7
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2
Slide #8
Dr. Alan Tribble
University of Iowa
Fall 2002
Lattice and Unit Cell
A primitive arrangement of
atoms in a crystal is called
a lattice
The Lattice Vectors Need
Not be Perpendicular
Every Equivalent Lattice
Point Satisfies
A unit cell is a
representation of the
lattice structure
c p b n a m R
r
r
r
r
+ + =
Chapter 2
Slide #9
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.3.
Three cubic-crystal unit cells. (a) Simple cubic. (b) Body-centered
cubic. (c) Face-centered cubic.
Lattice constant
aluminum
copper
gold
platinum
polonium
sodium
tungsten
Chapter 2
Slide #10
Dr. Alan Tribble
University of Iowa
Fall 2002
Example 1
Problem
If we pack hard spheres in a bcc lattice such that the atom in the center just
touches the atoms at the corners of the cube, find the fraction of the bcc unit cell
volume filled with hard spheres.
Solution
Each corner sphere in a bcc unit cell is shared with eight neighboring cells, so each
unit cell contains 1/8 of a sphere at each of the 8 corners, plus the central sphere.
Number of Spheres / Unit Cell =
Nearest Neighbor Distance =
Radius of Each Sphere =
Volume of Each Sphere =
Maximum Fraction Filled =
2
2 / 3 a
( ) 16 / 3 4 / 3 ) 3 / 4 (
3
3
a a =
4 / 3 a
68 . 0 8 / 3 16 / 3 2
3 3
= a a
Chapter 2
Slide #11
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.4.
(a) Diamond lattice. (b) Zincblende lattice.
The element semiconductors, Si
and Ge, have a diamond lattice
structure.
Most III-V compound
semiconductors, (e.g., GaAs),
have a zincblende lattice
structure.
Chapter 2
Slide #12
Dr. Alan Tribble
University of Iowa
Fall 2002
Crystal Planes
Note That There are Four Atoms in the ABCD Plane and
Five Atoms in the ACEF Plane. The Atomic Spacing is
Also Different.
Crystal Properties Along Different Planes are Different
Chapter 2
Slide #13
Dr. Alan Tribble
University of Iowa
Fall 2002
Miller Indices
A Convenient Method of Defining the
Various Planes in a Crystal
Find the Intercepts of the Plane on the Three
Cartesian Coordinates in Terms of the Lattice
Constant
Take the Reciprocals of These Numbers and
Reduce Them to the Smallest Three Integers
Having the Same Ratio
Enclose the Results in Parenthesis (hkl) as the
Miller Indices for a Single Plane
Chapter 2
Slide #14
Dr. Alan Tribble
University of Iowa
Fall 2002
Example 3
The Plane Shown Has
Intercepts at a, 3a, and
2a Along the 3
Coordinates
Taking the Reciprocals
Gives 1, 1/3, and 1/2
The Smallest Three
Integers Having the
Same Ratio are 6, 2,
and 3
The Plane is the (623)
Plane
Chapter 2
Slide #15
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.6.
Miller indices of some important planes in a cubic crystal.
Chapter 2
Slide #16
Dr. Alan Tribble
University of Iowa
Fall 2002
2.4 Valence Bonds
Chapter 2
Slide #17
Dr. Alan Tribble
University of Iowa
Fall 2002
Molecular Bonds
Covalent Bonds
Formed When Electrons are
Shared Between Atoms
Ionic Bond
Formed When Electrons are
Transferred From one Atom
to the Other
Chapter 2
Slide #18
Dr. Alan Tribble
University of Iowa
Fall 2002
Current Flow
If Electrons Can Migrate From Atom to Atom the Bulk
Motion of Charge is Current Flow
At the Start, Electrons are Bound to Their Parent Atom and
Do Not Leave
However, if an Electron Can Hop to the Next Atom it Will
Leave a Hole
A Hole is the Absence of an Electron
This Hole Can be Filled by Other Electrons
The Result is Current Flow
Note
Current Flow due to Electrons (Negative Charge) or Holes (Positive
Charge) is Equivalent
Chapter 2
Slide #19
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.12.
The basic bond representation of intrinsic silicon. (a) A broken bond at Position A,
resulting in a conduction electron and a hole. (b) A broken bond at position B.
Chapter 2
Slide #20
Dr. Alan Tribble
University of Iowa
Fall 2002
2.5 Energy Bands
Chapter 2
Slide #21
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.14.
Schematic representation of an isolated silicon atom.
The outer shell VB
electrons are most
likely to interact
Chapter 2
Slide #22
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.15.
Formation of energy bands as a diamond lattice crystal is formed by
bringing isolated silicon atoms together.
In General, Wed Like to
Know:
How many electrons
are normally in the CB?
How easy / hard is
it to excite other
electrons into the CB?
Chapter 2
Slide #23
Dr. Alan Tribble
University of Iowa
Fall 2002
Energy and Momentum
All Electronic
Transitions Must
Conserve Both Energy
and Momentum
Energy and
Momentum are
Related by
where m
n
is the
effective electron mass
Usually <= the mass of
a free electron
n
m
p
E
2
2
= (6)
Chapter 2
Slide #24
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.16.
The parabolic energy (E) vs. momentum (p) curve for a free electron.
Chapter 2
Slide #25
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.17.
A schematic energy-momentum diagram for a special semiconductor with m
n
= 0.25 m
0
and m
p
= m
0
.
The Effective Mass of
Bound Electrons in the
CB or VB May be Quite
Different
Chapter 2
Slide #26
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.18.
Energy band structures of Si and GaAs. Circles () indicate holes in the
valence bands and dots () indicate electrons in the conduction bands.
Si requires
a change of
momentum
Si is an
indirect
semiconductor
GaAs requires
no change of
momentum
GaAs is a
direct
semiconductor
Chapter 2
Slide #27
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.19.
Schematic energy band representations of (a) a conductor with two possibilities (either
the partially filled conduction band shown at the upper portion or the overlapping
bands shown at the lower portion), (b) a semiconductor, and (c) an insulator.
Conductors Semiconductors Insulators
CB Partially Filled Thermal Energy Large Bandgap
or Overlaps VB kT ~ Eg
Chapter 2
Slide #28
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2
Slide #29
Dr. Alan Tribble
University of Iowa
Fall 2002
Charge Carrier Concentration
The Concentration of Charge Carriers in the CB, n (cm
-3
),
in an Intrinsic Semiconductor Depends on
n(E)
The Density of Electrons Per Energy Range Per Unit Volume
N(E)
The Density of Allowed Energy States Per Energy Range Per Unit
Volume
F(E)
The Probability of an Electron Occupying a Given Energy Range

= = =
top top top
bottom
E E E
E
dE E F E N dE E n dE E n n
0 0
) ( ) ( ) ( ) (
(9)
Chapter 2
Slide #30
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.20.
Fermi distribution function F(E) versus (E E
F
) for various
temperatures.
Chapter 2
Slide #31
Dr. Alan Tribble
University of Iowa
Fall 2002
Fermi Energy
The Fermi Energy E
F
is the Energy at Which
the Probability of
Occupation by an
Electron is Exactly 0.5
Related Parameters
Fermi Momentum
Fermi Velocity
Fermi Temperature
Fermi Radius
Fermi Sphere
Sphere of Radius k
F
, Contains
the Occupied One-Electron
Levels
Fermi Surface
Surface of the Fermi Sphere,
Separates Occupied From
Unoccupied Levels
2
2
h
F
F
mE
k =
F F
k p h =
m
p
v
F
F
=
k
E
T
F
F
=
Chapter 2
Slide #32
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.21.
Intrinsic semiconductor. (a) Schematic band diagram. (b) Density of
states. (c) Fermi distribution function. (d) Carrier concentration.
Chapter 2
Slide #33
Dr. Alan Tribble
University of Iowa
Fall 2002
Simplifying F(E)
For (E - E
F
) > 3kT the Fermi Distribution Simplifies to
For (E - E
F
) < 3kT the Fermi Distribution Simplifies to
At Room Temperature
3kT ~ 3(1.38 x 10
-23
J/K)(300K)(1 eV/1.6 x 10
-19
J) ~ 0.1 eV
( )
|
.
|
\
|

kT
E E
E F
F
exp
(11a)
( )
|
.
|
\
|

kT
E E
E F
F
exp 1 (11b)
Chapter 2
Slide #34
Dr. Alan Tribble
University of Iowa
Fall 2002
Simplifying N(E) - See Appendix H
The Condition for Standing Waves
The de Broglie Hypothesis
Particles Having Mass Also Have Wave Properties
x
n
L
=
x
p
h
=
Chapter 2
Slide #35
Dr. Alan Tribble
University of Iowa
Fall 2002
Simplifying N(E) - 2
Combining the Previous Relations Gives
In 3-Dimensions
The Increamental Volume in Momentum Space for a Unit
Cube, L = 1, Associated With a Unit Increase in n is
x x
hn Lp =
z y x z y x
n n n h p p p L
3 3
=
3
h dp dp dp
z y x
=
Chapter 2
Slide #36
Dr. Alan Tribble
University of Iowa
Fall 2002
A Volume of Momentum Space is
A Volume Element is
The Number of Energy States Contained in the Volume
Element is
3
3
4
p V
p
=
dp p dV
p
2
4 =
( )2 4
2 3
dp p h =
Spin Up & Spin Down
Chapter 2
Slide #37
Dr. Alan Tribble
University of Iowa
Fall 2002
Momentum is Related to Energy by
So From the Previous Expression
Which Simplifies To
E m p
n
2 =
( ) dE E
h
m
h
dp p
dE E N
n
2 / 1
2 / 3
2 3
2
2
4
8
|
.
|
\
|
= =
( )
2 / 1
2 / 3
2
2
4 E
h
m
E N
n
|
.
|
\
|
=
Chapter 2
Slide #38
Dr. Alan Tribble
University of Iowa
Fall 2002
Solving for n
Plugging in and Solving Gives
=
top
E
dE E F E N
0
) ( ) (
)
`
|
.
|
\
|

|
.
|
\
|
=
0
2 / 1
2 / 3
2
exp
2
4 dE
kT
E E
E
h
m
F n
n
( )

|
.
|
\
|
|
.
|
\
|
|
.
|
\
|
|
.
|
\
|
=
0
2 / 1
2 / 3
2 / 3
2
exp exp
2
4
kT
dE
kT
E
kT
E
kT
E
kT
h
m
F n
Chapter 2
Slide #39
Dr. Alan Tribble
University of Iowa
Fall 2002
Solving for n - 2
The Integral is
So the Previous Equation Becomes
=
|
.
|
\
|
|
.
|
\
|
0
2 / 1
2
exp

dE
kT
E
kT
E
( )
2
exp
2
4
2 / 3
2 / 3
2

|
.
|
\
|
|
.
|
\
|
=
kT
E
kT
h
m
n
F n
Chapter 2
Slide #40
Dr. Alan Tribble
University of Iowa
Fall 2002
Solving for n - 3
We Define N
c
to be the Effective Density of States
2 / 3
2
2
2
|
.
|
\
|
=
h
kT m
N
n
C

(13b)
Chapter 2
Slide #41
Dr. Alan Tribble
University of Iowa
Fall 2002
Solving for n - 3
The Relation Simplifies to
If We Refer to the Bottom of the Energy Band as E
C
Instead of E = 0 We Have
|
.
|
\
|
=
kT
E
N n
F
C
exp
(15)
( )
|
.
|
\
|

=
kT
E E
N n
F C
C
exp
(16)
Chapter 2
Slide #42
Dr. Alan Tribble
University of Iowa
Fall 2002
The Solution for p
Similarly, it Can be Shown That The Hole Density in the VB
is
Where
|
.
|
\
|

=
kT
E E
N p
V F
V
exp
2 / 3
2
2
2
|
|
.
|
\
|
=
h
kT m
N
p
V

(17)
(18)
Chapter 2
Slide #43
Dr. Alan Tribble
University of Iowa
Fall 2002
Intrinsic Semiconductor Fermi Level
For an Intrinsic Semiconductor
The Intrinsic Carrier Density is Given by
n
i
= n = p
This Requires That
p
kt
E E
N
kT
E E
N n
V F
V
F C
C
=
|
.
|
\
|

=
|
.
|
\
|

= exp exp
Chapter 2
Slide #44
Dr. Alan Tribble
University of Iowa
Fall 2002
Intrinsic Semiconductor Properties
The Number of Electrons in the Conduction Band is Equal
to the Number of Holes in the Valence Band
For E
g
= E
C
- E
V
, it Can be Shown That
|
|
.
|
\
|
+
+
= =
C
V V C
i F
N
N kT E E
E E ln
2 2
(19)
|
|
.
|
\
|
= =
kT
E
N N np n
g
V C i
2
exp
(22)
Chapter 2
Slide #45
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.22.
Intrinsic carrier densities in Si and GaAs as a function of the
reciprocal of temperature.
5-7
Chapter 2
Slide #46
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2
Slide #47
Dr. Alan Tribble
University of Iowa
Fall 2002
Extrinsic Semiconductors
Adding Impurities, or Dopants, Produces an Extrinsic
Semiconductor With Different Chemical / Electrical
Properties
n-Type
Arsenic (As) Has One More Electron Than Si
The Extra Electron Gives the Appearance of Too Much Negative
Charge
Arsenic is a Donor
p-Type
Boron (B) Has One Less Electron Than Si
The Extra Hole (Missing Electron) Gives the Appearance of Too Much
Positive Charge
Boron is an Acceptor
Chapter 2
Slide #48
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.23.
Schematic bond pictures for (a) n-type Si with donor (arsenic) and (b)
p-type Si with acceptor (boron).
Chapter 2
Slide #49
Dr. Alan Tribble
University of Iowa
Fall 2002
Dopants
1
H
1.008
2
He
4.003
3
Li
6.939
4
Be
9.012
5
B
10.81
6
C
12.01
7
N
14.01
8
O
16.00
9
F
19.00
10
Ne
20.18
11
Na
22.99
12
Mg
24.31
13
Al
26.98
14
Si
28.09
15
P
30.97
16
S
78.96
17
Cl
32.06
18
Ar
35.45
19
K
39.10
20
Ca
40.08
21
Sc
44.96
22
Ti
47.90
23
V
50.94
24
Cr
52.00
25
Mn
54.94
26
Fe
55.85
27
Co
58.93
28
Ni
58.71
29
Cu
63.54
30
Zn
65.37
31
Ga
69.72
32
Ge
72.59
33
As
74.92
34
Se
78.96
35
Br
79.91
36
Kr
83.80
37
Rb
85.47
38
Sr
87.62
39
Y
88.91
40
Zr
91.22
41
Nb
92.91
42
Mo
95.94
43
Tc
98.91
44
Ru
101.1
45
Rh
102.9
46
Pd
106.4
47
Ag
107.9
48
Cd
112.4
49
In
114.8
50
Sn
118.7
51
Sb
121.8
52
Te
127.6
53
I
126.9
54
Xe
131.3
55
Cs
131.9
56
Ba
137.3
57
La
138.9
72
Hf
178.5
73
Ta
181.0
74
W
183.9
75
Re
186.2
76
Os
190.2
77
Ir
192.2
78
Pt
195.1
79
Au
197.0
80
Hg
200.6
81
Tl
204.4
82
Pb
207.2
83
Bi
209.0
84
Po
(210)
85
At
(210)
86
Rn
(222)
87
Fr
(223)
88
Ra
(226)
89
Ac
(227)
104 105
Lanthanides
58
Ce
140.1
59
Pr
140.9
60
Nd
144.2
61
Pm
(145)
63
Sm
150.4
63
Eu
152.0
64
Gd
157.3
65
Tb
158.9
66
Dy
162.5
67
Ho
164.9
68
Er
167.3
69
Tm
168.9
70
Yb
173.0
71
Lu
175.0
Actinides
90
Th
232.0
91
Pa
(231)
92
U
238.0
93
Np
(237)
94
Pu
(242)
95
Am
(243)
96
Cm
(247)
97
Bk
(249)
98
Cf
(251)
99
Es
(254)
100
Fm
(253)
101
Md
(256)
102
No
(253)
103
Lr
(257)
Chapter 2
Slide #50
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.24. Measured ionization energies (in eV) for various impurities in Si and GaAs. The levels
below the gap center are measured from the top of the valence band and are acceptor levels unless
indicated by D for donor level. The levels above the gap center are measured from the bottom of the
conduction band and are donor levels unless indicated by A for acceptor level.
8
|
.
|
\
|

|
|
.
|
\
|
|
|
.
|
\
|
=
2
6 . 13
n
eV
m
m
E
o
n
s
o
D
Ionization Energy is
Given by
Chapter 2
Slide #51
Dr. Alan Tribble
University of Iowa
Fall 2002
Nondegenerate Semiconductors
For Lightly Doped Semiconductors
There is Usually Enough Thermal Energy to Supply the
Energy E
D
to Ionize All Donor (or Acceptor) Impurities at
Room Temperature
Under Complete Ionization We Have
n = N
D
E
C
- E
F
= kT ln (N
C
/ N
D
)
And
p = N
A
E
F
- E
V
= kT ln (N
V
/ N
A
)
(24)
(25)
(26)
(27)
Chapter 2
Slide #52
Dr. Alan Tribble
University of Iowa
Fall 2002
Effects of Doping
N-Type: E
C
- E
F
= kT ln (N
C
/ N
D
)
Increasing N
D
Decreases the Energy Difference
Moves the Fermi Level Closer to the Bottom of the CB
P-Type: E
F
- E
V
= kT ln (N
V
/ N
A
)
Increasing N
A
Decreases the Energy Difference
Moves the Fermi Level Closer to the Top of the VB
Chapter 2
Slide #53
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.25.
Schematic energy band representation of extrinsic semiconductors
with (a) donor ions and (b) acceptor ions.
Chapter 2
Slide #54
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.26.
n-Type semiconductor. (a) Schematic band diagram.
(b) Density of states. (c) Fermi distribution function (d) Carrier concentration. Note that
np = n
i
2
.
Increasing
Donor Levels
Moves E
F
Toward E
C
Increasing
Acceptor Levels
Moves E
F
Toward E
V
Chapter 2
Slide #55
Dr. Alan Tribble
University of Iowa
Fall 2002
Extrinsic Semiconductor Relations
In terms of n
i
and E
i
Note That np = n
i
2
|
.
|
\
|

=
kT
E E
n n
i F
i
exp (28)
|
.
|
\
|

=
kT
E E
n p
F i
i
exp
(29)
Chapter 2
Slide #56
Dr. Alan Tribble
University of Iowa
Fall 2002
Example 4
Problem
A Si ingot is doped with 10
16
As atoms/cm
3
. Find the carrier concentration and the Fermi
level at room temperature, (300 K).
Solution
At 300 K we can assume complete ionization of the impurity atoms.
The concentrations of carriers are
The Fermi level measured from the bottom of the conduction band is
The Fermi level measured from the intrinsic Fermi level is
( )
3 3 3 16
2
3 9 2
10 3 . 9 10 / 10 65 . 9 /

= = = cm cm cm N n p
D i
3 16
10

= cm N n
D
( ) eV N N kT E E
D C F C
205 . 0 ln = =
( ) eV n N kT E E
i D i F
358 . 0 ln = =
Chapter 2
Slide #57
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.27.
Band diagram showing Fermi level E
F
and intrinsic Fermi level E
i
.
Chapter 2
Slide #58
Dr. Alan Tribble
University of Iowa
Fall 2002
Double Doping
If Both n and p Doping is Present
Complete Ionization Requires Charge Balance
Recall That
D A
N p N n + = +
(30)
2
i
n np =
Chapter 2
Slide #59
Dr. Alan Tribble
University of Iowa
Fall 2002
N-Type Carrier Density
The Carrier Density in an N-Type
Semiconductor is
Note That for N
D
> N
A
( )
(
+ + =
2
2
4
2
1
i A D A D n
n N N N N n
(31)
n i n
n n p /
2
= (32)
A D n
N N n
Chapter 2
Slide #60
Dr. Alan Tribble
University of Iowa
Fall 2002
P-Type Carrier Density
The Carrier Density in an P-Type
Semiconductor is
Note That for N
A
> N
D
( )
(
+ + =
2
2
4
2
1
i A D D A p
n N N N N p
(33)
p i p
p n n /
2
=
(34)
D A n
N N p
Chapter 2
Slide #61
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.28.
Fermi level for Si and GaAs as a function of temperature and impurity
concentration. The dependence of the bandgap on temperature is shown.
9
Chapter 2
Slide #62
Dr. Alan Tribble
University of Iowa
Fall 2002
Figure 2.29.
Electron density as a function of temperature for a Si sample with a donor
concentration of 10
15
cm
-3
.
Chapter 2
Slide #63
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2 Summary
Column IV Elements, Si, Ge, ...
Unit Cells, Miller Lattices
2.4 Valence Bonds
Covalent and Ionic Bonds, Electrons and Holes
2.5 Energy Bands
Band Gap Structure, E
C
, E
V
, E
g
Definition of Insulators, Semiconductors, Conductors
Fermi-Dirac Distribution, E
i
, n, p
Effect of Doping on E
i
, n, p
Note:
List of Symbols
is Given in
Appendix A
Chapter 2
Slide #64
Dr. Alan Tribble
University of Iowa
Fall 2002
Chapter 2 Homework Assignment
Problems: 5, 8, 11, 15, 17

Chapter 02

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