Zebrev ICMNE 2009

1
Department of micro Department of micro- - and and nanoelectronics nanoelectronics

gizebrev@mephi.ru ICMNE-2009
Reversible Gate Oxide Defect
Reversible Gate Oxide Defect
Recharging in
Recharging in
Nanoscale
Nanoscale
Field Effect
Field Effect
Transistors: Charge Annealing, Tunnel
Transistors: Charge Annealing, Tunnel
Gate Leakage, Random Telegraph
Gate Leakage, Random Telegraph
Signal and 1/f Noise
Signal and 1/f Noise
G.I. Zebrev, D.K. Batmanova, N.A. Samokhin
NATIONAL RESEARCH NUCLEAR UNIVERSITY, NATIONAL RESEARCH NUCLEAR UNIVERSITY, MOSCOW MOSCOW , RUSSIA , RUSSIA
2
Gate Oxide Defect as Source of
Gate Oxide Defect as Source of
Instabilities
Instabilities
Tunneling leakage currents are the fundamental problem which
determines the minimum thickness of the gate oxide.
The main effect of radiation degradation consisted in radiation-
induced trapped charge and interface traps buildup with
accompanying time-dependent relaxation (annealing) resulting in
temporal instability of the MOSFETs threshold voltage and
transconductance.
The effect to be dealt with in this report is reversible recharging
process due to mutual carrier exchange between the near-interfacial
oxide defects and the silicon substrate controlled by the Fermi level
position in the Si.
The recharging of radiation-induced gate oxide defects controls three
main types of temporal instabilities in modern MOSFETs with ultrathin
gate oxides
- logarithmic in time charge annealing;
- radiation-induced random telegraph signal and 1/f noise;
- radiation-induced leakage currents (RILC) through gate oxides.
3
Reversible Charge Relaxation
Reversible Charge Relaxation
The carrier exchange
between the Si and traps
tend to restore the
equilibrium at given Fermi
level position or, the same,
at a given gate voltage Vg.
Those traps with energy
levels located outside of the
Fermi level variation range
cannot contribute to
reversible recharging.
(a) annealing
(b) emptying
4
Non
Non
-
-
stationary Rate Equation
stationary Rate Equation
Rate equation describing recharging kinetics of the near-interfacial defects
( )
( )
( )
( ) ( ) ( )
i G
i
i i
C i
i
C i i
x
f
T x
f f
x
f f
dt
df
t c t t

=
exp
1 1
0 0
is non-equilibrium occupancy number of the
traps electronic level with specified
energy and spatial location
( )
i i i
x f f c , =
1
exp 1
|
|
.
|
\
|
(

+ =
T
E E
f
F C
C
( )
|
.
|
\
|
|
.
|
\
|
=
c
t t
i a
i
x
T
x exp exp
00 0
- occupancy number at the edge of the Si conduction band;
- time constant of elastic tunneling from conductive band to the defect;
( )
|
.
|
\
|
=
t t
i
i G
x d
x exp
00
-time of elastic tunneling from the defect to the gate
DC
t and
CD
t
are tunneling time constants, respectively, from the conductivity band to the
defect and vise versa, with taking into account the concentration of
electrons in the channel
5
The solution of
The solution of
nonstationary
nonstationary
kinetic equation
kinetic equation
If initial conditions is
( )
( ) 0
0
i i
f t f = =
( )
( ) ( ) ( )
( )
0 0
exp 1
i
S
i
i
i i
f f
t
f t f
|
|
.
|
\
|
|
|
.
|
\
|
+ =
t
, then solution of rate equation reads
where a notation for the new time constant was introduced
( )
( ) ( ) ( )
1
1 1 1

|
|
.
|
\
|
+ + =
i G i SD i DS
i i
x x x
x
t t t
t
and stationary trap-filling can be written as follows
( )
( )
( )
( )
( )
( )
1
exp 1
|
|
.
|
\
|
|
.
|
\
|

+ + = =
T
E E
x
x
x
x
x f
F T
i G
i DC
i DC
i i
i
S
i
t
t
t
t
6
Radiation
Radiation
-
-
Induced Charge
Induced Charge
Annealing
Annealing
Tunnel relaxation of radiation-induced charge trapped in the gate oxides
has temporal logarithmic dependence
( ) ( )
2
0
0 0 min
, , 1 ln 1 .
t g ox
th eff
ox
qF K t
D
V D P P T
l P
q
c c t
| |
| |
| |
~ |
|
|
|
|
\ .
\ .
\ .
Approximate logarithmic dependence is observed on temporal scales from 10
-7
to 10
7
s !
This is due to exponential scattering of tunnel time constants of recharging
7
Modeling Radiation
Modeling Radiation
-
-
Induced
Induced
Leakage Current (RILC)
Leakage Current (RILC)
For the stationary case the tunneling current
through a single defect is
( ) ( )
1
exp 1
|
|
.
|
\
|
|
|
.
|
\
|
|
.
|
\
|

+ + =
T
E E
x x e I
F T
i G i DC i
t t
E
F
defect
silicon
oxide
gate
E
F
This current is due to tunneling through radiation-induced defects states in the
oxide
The typical thickness of the capture of positive charge near the interface Si-SiO2
in the old devices is a few nanometers, that is equal to the thickness of the oxide of
modern devices.
Therefore, distribution of defects in the oxide is assumed to be a priori uniform
8
Monte
Monte
-
-
Carlo Simulations of
Carlo Simulations of
Stochastic Gate Leakage
Stochastic Gate Leakage
RILC is stochastic value due to occasional defect position in energy and space
One needs Monte-Carlo simulation
Many defects (100) correspond to Gaussian distribution over
samples due to self-averaging
A few defects (5) correspond to stochastic distribution even for
equal mean defect numbers
9
Flicker (1/f) noise
Flicker (1/f) noise
The main source of noise in MOSFET is low frequency 1/f noise.
The 1/f noise in MOSFET relates primarily to the exchange of carriers between
the silicon and defects located in the gate dielectric near the interface Si-SiO
2
.
This process leads to fluctuations in the number of carriers in the channel and
corresponding changes in the channel current.
Superposition of time fluctuations of the current arising from the recharge of
defects with different time constants (the so-called random telegraph signal,
STS, Random Telegraph Signal, RTS) gives 1/f spectrum.
Current fluctuation due to
a single oxide defect
recharging.
Flicker noise is a superposition of random telegraph signals (RTS) from the
defects with a wide variety of time constants .
The recharging of defects located near the source and drain electrodes,
practically does not affect the current in the channel, while the largest
contribution to the telegraph signal gives traps located approximately equal
distance from the drain and source.
10
Modeling 1/f noise
Modeling 1/f noise
Rate equation for the fluctuations of the occupancy number in locality a stationary
value with Langevins source
( ) t
( ) t
f
dt
f d
i
i i
t
o o
+ =
( )
}

|
|
.
|
\
|

=
t
i
i
dt t
t t
f ' '
'
exp
t
o
Full response function as a sum
of response functions of separate defects
( ) ( ) '
' '
'
min
1
max
1
t t
t t
E
t t
E
l
t t K
|
|
.
|
\
|
|
|
.
|
\
|

|
|
.
|
\
|

= u
t t
( )
( )
(
+
=
(
0
2
0
2
0 1
0
arctan 2
1 ln
2
1
cos
sin
et
t e
e
t
e
e
t E
t
t
dt
Cos-Fourier-transform of response function yields 1/f spectrum !
( )
1 1
( )
2 4
e K
l l f
t
e
e
9 ~ =
Mathematical property
of the integral exponential function:

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Department of micro Department of micro- - and and nanoelectronics nanoelectronics

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