Huajing Discrete Devices

Silicon NPN Bipolar Transistor for Low-frequency 3DD13005G8D Amplification

1 Description 3DD13005G8D,high voltage fast-switching NPN power
Typical Data 400 4 75 V A W IC PtotTC=25

transistorsis manufactured using Planar technology, terminal VCEO guardring structure and minority life-time controling technology for high voltage capability,high switching speeds and reliability. PackageTO-220AB. 2 Characteristics
Low switching power dissipation Low reversing leaking current Good high-temperature characteristic Good current characteristic High reliability 1. B 2. C

3. E

Equivalent circuit

3 Application The device is mainly used in electronic ballasts for Fluorescent lighting and switch mode power supplies.

C B E VD

Parts Name
CONTENT

The name and content of poisonous and harmful material in products hazardous substance Pb Hg Cd Cr(VI) PBB PBDE 0.1% 0.1% 0.01% 0.1% 0.1% 0.1%

Lead Frame Molding Compound Chip Wire Bonding Solder

means the hazardous material is under the criterion of SJ/T11363-2006. Note means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroups ROHS.

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4 Electrical Characteristics
Maximum Ratings Except for Other PrescriptionTa= 25 Parameter Note Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Current (peak) Ta=25 Power Dissipation Tc=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg

3DD13005G8D

Rating 700 400 9 4 8 2 75 150 -55150

Unit V V V A A W

Electrical characteristics Except for Other PrescriptionTa= 25 Parameter Note Collector-Base Cutoff Current Collector- Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Ratio Between hFE1of Low Current and hFE2 of High Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Rise Time Fall Time Transition Frequency a: Impulse tp300s,2% Symb ol ICBO ICEO IEBO VCBO VCEO VEBO hFEa hFE1/ hFE2 VCE sata VCE sata VBE sata ts tr tf fT Test Conditions VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=1A hFE1 CE=5V, IC=50mA V hFE2VCE=5V IC=1A , IC=2A, IB=0.5A IC=1A, IB=0.2A IC=2A, IB=0.5A UI9600IC=0.5A VCE=10V, IC=0.5A f=1MHz 5 Criterion Min Typ Max 0.1 0.1 0.1 700 400 9 15 35 0.6 0.7 0.25 0.2 0.95 2 1 0.6 1.5 4 1 0.8 V V V s s s MHz Unit mA mA mA V V V

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5 Typical Characteristics
Figure 1 Safe Operating Area

3DD13005G8D

Figure2 Power Derating(Ptot-T)

IC (A)
Tc=25

Ptot(W)

80 60
Ptot-Tc

40 0.1 20
Ptot-Ta

0.01 1 10 100 VCE (V)

0 0 50 100

T()

Figure 3

IC-VCE Characteristics(Typical)

Figure 4 hFE-IC Characteristics(Typical)

Ic(A)
Ta=25

hFE hFE
Ta=125

VCE=5V

10
Ta=25 Ta=-55

IB=10mA 0
5
VCE(V)

1 0.01

0.1

IC (A)

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3DD13005G8D

Figure 5 VCE(sat)-IC Characteristics(Typical)

Figure 6 VBE(sat)-IC Characteristics(Typical)

CEsat

(V)

VBEsat(V)

1.1
Ta=125

Ta=25

0.9
0.1

Ta=25

0.7
Ta=125

0.01 0.1

IC/IB=4

IC/IB=4

IC (A)

0.5 0.1

Ic(A)

Figure 7

ts-IC Characteristics(Typical)

ts(s)
4

Ta=25

1 0 0.2 0.4 0.6 Ic(A)

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6 External Dimension (TO-220AB)

3DD13005G8D

B C E

7 Explanation
7-1Packing 1 small packing, 200 pieces per plate 2 middle packing, 10 plates per middle paper box 3 big packing, 5 box per big paper case 7-2 Warnings 1All the products made from Huajing Microelectronics should be in accordance with the corresponding electrical characteristics specifications and package sizes described in the publication. Interrelated technological compact must be signed in both sides before making the special products customers demand. 2Exceeding the Maximum Ratings is forbidden when the device is working. It is suggested that the device works under 80% of the Maximum Ratings. During installation please try to reduce the mechanical stress to prevent the partial distortion and transmogrification of the device case, which may result in application failure, avoid approching to heat component, pay attention to the temperature and time in welding and adding stannum. 3) This publication is made by Huajing Microelectronics and subject to regular change without notice.

8 communication
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