Mosfet 1

MOSFETCurrent VoltageCharacteristics MOSFET CurrentVoltage Characteristics
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ECEDept.,NITDGP
InversionLayerTransport
Want a formalism to describe lateral current along inversion layer.
Not interested in details of electron distribution in depth (along x) x). Define sheet carrier concentration: Generalexpressionforinversionlayercurrent General expression for inversion layer current Note:Ieindependentofy. 10/17/2011
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Dene sheet charge density of inversion layer: Rewritecurrentequation: We have just performed the sheet charge approximation (SCA). it is physically meaningful to define an average lateral velocity for all electrons in inversion layer SCA suitable if distribution of vey in depth does not change too rapidly in the scale of the changes that are taking place in n Assume now mobilitylimited electron drift (low lateral field) [we will undo this for the short MOSFET] h t MOSFET]: Then:
RewritethisintermsofV(y),thevoltagealongtheinversionlayer. DefinitionofV(y): Definition of V (y):

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The source (located at y = 0) is reference for V .
Thenlateralelectricfieldalonginversionlayeris:
Insert this i current equation: hi in i
NowneedtorelateQi(y)withV(y). Now need to relate Qi(y) with V (y) Remember fundamental chargecontrol relationship for inversion layer in twoterminal MOS structure:
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Inversion Layer Charge Density (p-type Si)
In MOSFET, this equation only applies at source end, where V (0) =0.
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Forrestofthechannel,reusethisrelationshipaccountingforlocalpotentialdrop:
Qi depends on y through local inversion layer voltage V (y). Thisiscalledthegradualchannelapproximation(GCA). Note: VT is function of y through body eect [will examine implications later]. Under GCA, current equation becomes:
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ECEDept.,NITDGP Firstorder dierential equation in terms of V (y).
IV characteristics of ideal MOSFET Consider MOSFET in linear regime (VGS > VT , VGD > VT ):
Inversion layer everywhere under gate. Lateral eld set up along channel current ows.
Develop rstorder model.

Separate variables: Integrate:
Terminal Drain Current
Result valid as long as strong inversion prevails in all points of channel. Worst point: y = L, for which:
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Summary Sheet-charge approximation: inversion layer very thin in scale of vertical Sheet charge dimensions current formulation in terms of Qi. Gradual-channel approximation: electric eld changes relatively slowly along Ch l Channel l vertical electrostatics control inversion layer charge lateral electrostatics control lateral ow of charge g Consequence of GCA: local inversion layer sheet-charge density:
In linear regime, ID modulated by VGS and VDS: VGS, to rst order, controls electron concentration in channel VDS, to rst order, controls lateral electric eld in channel MOSFET current in linear regime:
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Problems with MOSFET current model for linear regime as VDS approaches VGS-VT. Problems centered around y = L: Local gate overdrive goes to zero lQil = 0.How can current be supported? Gradual-channel approximation becomes invalid. Sheet-charge approximation becomes invalid. Lateral field so large that linearity between field and velocity invalid.
But don't need new model! Reason: when VDS approaches VGS-VT, ID changes very prominent debiasing on the drain side of the channel. little due to
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What happens if VDS reaches or exceeds VGS-VT? Electron concentration at y = L drops to very small concentrations p y depletion region appears at y = L: pinch-off. Depletion region is no barrier to electron flow: Field "pulls" electrons into drain. drain
As VDS exceeds VGS-VT, depletion region widens into channel underneath gate; all extra voltage consumed in depletion region; electrostatics of channel, to first order, unperturbed;
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channel current unchanged ECEDept.,NITDGP saturation. MOSFET in
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Current model in saturation:
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Second-order and non-ideal effects in MOSFETs
Introduce four significant refinements to model: Body effect (impact of y-dependence of VT) ( p Back bias (impact of VBS) Channel length modulation (impact of VDS >VDSsat) Subthreshold regime (channel conduction for VGS <VT)
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Key questions
The potential of the inversion layer increases along the channel. This should change the local threshold voltage. Does this affect the I-V characteristics of the MOSFET?
What happens to MOSFET I-V characteristics if we apply a bias to the body with respect to the source?
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Body effect
In a MOSFET biased in linear or saturation regimes, channel voltage V(y) g , g (y) depends on position: Voltage difference between channel and body V(y) VT(y) (increases along y)
Dependence of VT(y) further debiases transistor: ID lower than ideal VDSsat lower than ideal
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Using VGS = VT,
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Voltage dependence of VT:
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Model Simplification:
Solve again differential equation to get MOSFET current in linear regime:
VDSsat becomes
Current in saturation region:
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Back Bias
If bias applied to body w.r.t source (VSB > 0) pp y ( ) VT shifts positive for constant VGS and VDS, ID reduced
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Second-order and non-ideal effects in MOSFETs

Introduce four significant refinements to model: Body effect (impact of y-dependence of VT) Back bias ( (impact of VBS) f Channel length modulation (impact of VDS >VDSsat) Subthreshold regime (channel conduction for VGS <VT) V Key Questions Th MOSFET current i th saturation regime i not perfectly saturated. The t in the t ti i is t f tl t t d Why? What are the key dependencies of the output conductance? y p p What is the physics of carrier transport in the subthreshold regime? What are the key dependencies of the subthreshold current? Why is the subthreshold current important?
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Origin is channel length modulation: To first order in saturation VDS no longer controls the electrostatics of the order, saturation, channel ID saturates with further increases in VDS However, increases in VDS beyond VDSsat must be accommodated somehow depletion region opens up at drain-end of channel:
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Since
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MOSFETCurrent VoltageCharacteristics MOSFET CurrentVoltage Characteristics

RewritethisintermsofV(y),thevoltagealongtheinversionlayer. DefinitionofV(y): Definition of V (y):

The source (located at y = 0) is reference for V .

Insert this i current equation: hi in i

Inversion Layer Charge Density (p-type Si)

ECEDept.,NITDGP Firstorder dierential equation in terms of V (y).

Develop rstorder model.

Separate variables: Integrate:

Terminal Drain Current

channel current unchanged ECEDept.,NITDGP saturation. MOSFET in

Current model in saturation:

Second-order and non-ideal effects in MOSFETs

Using VGS = VT,

Voltage dependence of VT:

Solve again differential equation to get MOSFET current in linear regime:

Current in saturation region:

Second-order and non-ideal effects in MOSFETs

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