2.

FET Amplifier Circuits Analysis

FET amplifier parameter gm CS amplifiers CS with RS amplifiers SF amplifiers Bootstrap amplifier CG amplifiers

EE2603-02 Electronic Circuit Analysis

Types of FET amplifiers (MOSFET)

VDD RD Ri vi C2 RG C1 vo RL RS CS Ri vi C2 RG

VDD RD C1 vo RL RS

(a) Common Source (CS) High AV and high Ri Voltage amplifications

VDD

(b) Common Source (CS) with RS Low AV and high Ri Stability applications
VDD RD vo C1 RG C2 Ri vi RL

Ri vi

C2 C1 RG RS vo RL

CG

RS

EE2603-02

(c) Source Follower (SF) Very low Ro and high Ri Buffer applications

EE2603-02 2 Electronic Circuit Analysis

(d) Common Gate (CG) Very low Ri and high AV High Frequency applications

FET amplifier parameter gm

MOSFET-self-bias amplifier

VDD RD ID

IG=0 RG

IDSS VP gm RS

VGS -

IDRS

VGS = IDRS (self bias) or VGS = VG IDRS (voltage divider bias) (1) R1 Where VG = VDD ( all components are given in the circuit) R1 + R2 IDRS V (2) ID = IDSS 1 GS = IDSS 1 VP VP Substitute given IDSS , VP , RS in (2) above and get quadratic equation in ID
2 2

Solve ID and Substitute ID in (1) and get VGS (3) 2IDSS V 1 GS for FET equivalent circuit calculations Find gm = VP VP EE2603-02
Electronic Circuit Analysis

FET amplifier parameter gm

MOSFET-voltage divider-bias amplifier

VDD R1 VG R2 RD ID VGS

+ + -

IDSS VP gm

RS

- + -

ID R S

VGS = VG IDRS (voltage divider bias) (1) R1 Where VG = VDD ( all components are given in the circuit) R1 + R2 V IDRS V (2) ID = IDSS 1 GS = IDSS 1 G VP VP Substitute given IDSS , VP , RS in (2) above and get quadratic equation in ID
2 2

Solve ID and Substitute ID in (1) and get VGS (3) 2IDSS V 1 GS for FET equivalent circuit calculations Find gm = VP VP EE2603-02
Electronic Circuit Analysis

VDD
Example: Find gm of the given MOSFET amplifier

ID

RD

gm=?

IDSS=8mA

VP=8V

RG

RS=2.4k

V p = 8 , IDSS = 8mA, RS = 2.4k but VGS = ID RS = 2.4ID V

ID V = IDSS 1 GS VP 2.4ID = 8 1 8
2

8 = ( 8 + 2.4ID )2 64

2 2 8I D = 64 + 5.76ID 38.4ID 5.76ID 46.4ID + 64 = 0

( 46.4 ) 2153 1474.6 46.4 26.04 = = 1.77 or 6.29 11.52 11.52 VGS = ( 1.77mA 2.4k ) = 4.25 or ( 6.29mA 2.4k ) = 15.1 V V

ID =

But VGS = 15.1 beyond VP = 8 neglected V V

2IDSS VGS 1 VP VP

gm =
EE2603-02

2 8 4.25 = 1 = 0.94mS 8 8
EE2603-02 5 Electronic Circuit Analysis

VDD=20V

Example: Find gm of the given FET amplifier

R 1= 2MW VG

RD=4.7kW ID
IDSS=8mA

+ + -

R 2= 100kW

VGS

VP=-8V

RS=2.4kW

Vp = 8V, IDSS = 8mA, RS = 2.4k but VGS = VG IDRS = 0.95 2.4ID 20 100k whereVG = = 0.95V 100k + 2000k V ID = IDSS 1 GS VP 0.95 2.4ID 8 = 8 1 = ( 8 0.95 + 2.4ID )2 8 64
2 2

2 2 8ID = 80.1 + 5.76ID 42.96ID 5.76ID 50.96ID + 80.1 = 0

( 50.96) 2597 1845 50.96 27.41 = = 2.04mA or 6.8mA 11.52 11.52 VGS = 0.95 (2.04mA 2.4k ) = 3.9V or (0.95 6.8mA 2.4k ) = 15.37V ID = But VGS = 15.37V is beyond (VP = 8V ) it is neglected Correct answer is VGS = 3.9V 2IDSS V 1 GS VP VP 2 8 3.9 = 1 = 1.025mS 8 8 EE2603-02

gm =

Electronic Circuit Analysis

CS amplifier analysis
VDD RD Vi RG RL RS CS Vo Vi R2 RL RS CS R1 RD Vo VDD

MOSFET-self-bias CS amplifier

MOSFET-voltage divider-bias CS amplifier

Ri

iin ig=0 RG

gm vgs (RD // RL ) vo Av = = = gm (RD // RL ) vin vgs

vgs
S

gmvgs RD Ro

vo iL RL

vi

vin

Rin

Rin = RG
EE2603-02 Electronic Circuit Analysis

Ro = RD
7

CS with RS amplifier analysis

VDD RD Vi RG RL RS Vo Vi R2 RL RS R1 RD Vo VDD

JFET-self-bias CSwithRS amplifier

MOSFET-voltage divider-bias CS withRS amplifier

Ri

iin ig=0 G RG vgs

S

gmvgs RD

vo iL RL Ro

g mv gs (RD // RL ) g m ( RD // RL ) vi vo A = = = v v in v gs + gmv gs RS 1 + gm RS ( RD // RL ) {if 1 << gm RS } approximate RS

EE2603-02 Electronic Circuit Analysis

vin

RS Rin

Rin = RG

Ro = R D
8

SF amplifier analysis
VDD

VDD R1

Vi RG Vo RS RL

Vi R2 Vo RL

RS

JFET-self-bias SF amplifier

MOSFET-v.divider-bias SF amplifier

Ri

iin ig=0

g mv gs (RS // RL ) g ( R // RL ) v A = o = = m S v v in v gs + g mv gs (RS // RL ) 1 + gm (RS // RL ) 1 if 1 << gm (RS // RL ) vi

vgs vin RG RS Rin

S

gmvgs vo RL

VRS = v gs and I RS = gmv gs Ro = RS // ( RS / I RS V = RS // v gs / gmv gs = RS // (1 / gm )

Ro

EE2603-02 Electronic Circuit Analysis

Rin = RG

Ro = RS//1/gm

Example: Find Ro , Rin =

vin v , Av = o of the folowing SF amplifier. iin vin

VDD

V p = 8 , IDSS = 8mA, RS = 2.4k but VGS = ID RS = 2.4ID V

ID V = IDSS 1 GS VP 2.4ID = 8 1 8
2

8 = ( 8 + 2.4ID )2 64

2 2 8I D = 64 + 5.76ID 38.4ID 5.76ID 46.4ID + 64 = 0

Vin

IDSS=8mA VP=8V RS=2.4k

( 46.4 ) 2153 1474.6 46.4 26.04 RG=1M = = 1.77 or 6.29 11.52 11.52 VGS = ( 1.77mA 2.4k ) = 4.25 or ( 6.29mA 2.4k ) = 15.1 R V V in But VGS = 15.1 beyond VP = 8 neglected V V

ID =

Vo
RL=2.4k

Ro

gm =

2IDSS VGS 1 VP VP

2 8 4.25 = 1 = 0.94mS 8 8

Ro = RS //(1 / gm ) = 2.4k //

1 k = 2.4k // 1.06k = 0.74k 0.94

Rin = RG = 1M
Av = g (R // RL ) vo 0.94(2.4k // 2.4k) 1.13 = m S = = = 0.53 v in 1 + gm (RS // RL ) 1 + 0.94(2.4k // 2.4k) 2.13
EE2603-02 10 Electronic Circuit Analysis

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Bootstrap Amplifier analysis

Millers Theorem
I1 V1

I2 V2 V1

I1 ZM1 ZM2

I2 V2

Rin
V V V V I1 = 1 2 and I2 = 2 1 Z Z

V V Z Z M1 = 1 = 1 I1 V1 V2 Z Z = = Input resis tan ce V2 1 A V 1 V 1

V V Z Z Z M2 = 2 = 2 = I 2 V2 V1 1 V1 V2 Z = resis tan ce at output ter min al 1 1 A

V

V Where A = 2 V V1
EE2603-02 EE2603-02 11 Electronic Circuit Analysis

Millers Theorem applied to Bootstrap amplifier

I1 V1

I2 V2 V1

I1 ZM1 ZM2

I2 V2

Rin

VDD RD Vin Vo1 RG Rin RS1 Vo2 RS2 Vo Vin

VDD RD Vo

Vo1 RL Rin RM1 RS1 RS2 Vo2

RL

RM2

Millers resistor RG is connected between Vin and Vo2

EE2603-02

Rin = RM1 = 1 AV
EE2603-02 12 Electronic Circuit Analysis

RG

RS3 = RM2 =

RG 1 1A V

Example: Find Rin of the folowing Bootstrap CS amplifier.

Vp = 8V, IDSS = 8mA, RS = 1k but VGS = IDRS1 = 1 ID V ID = IDSS 1 GS VP ID 8 = 81 = ( 8 + ID )2 8 64
2 2

1. Find gm

VDD RD Vin
RG 300kW

Vo3

2 2 8ID = 64 + ID 16ID ID 24ID + 64 = 0 ( 24 ) 576 256 24 17.89 ID = = = 3.05 or 20.945 11.52 2 VGS = ( 3.05 1k ) = 3.05V or ( 20.9mA 1k ) = 20.9V

Vo2
1kW 1.2kW

RS1 Vo1 RS2

RL

Rin

But VGS = 20.9V is beyond VP = 8V neglected 2IDSS V 1 GS VP VP

gm =

2 8 3.05 = 1 = 1.24mS 8 8
Vin Vgs
RG 300kW

Vo3 gmVgs RL RS1 RD Vo1 RS2

2. Find Vo1/Vin=AV1

(gmVgs )RS2 v 1.24mS(1.2k) 1.488 Av1 = o1 = = = = 0.399 vin (Vgs ) + (gmVgs )(RS1 + RS2 ) 1 + 1.24mS(2.2k) 3.728
3. Find Rin = RM1
RG 300k Rin = RM1 = = = 499k (RG connected fromV to Vo1 ) in 1 AV1 1 0.399
EE2603-02 EE2603-02 13 Electronic Circuit Analysis

Vgs

1kW 1.2kW

Rin

CG Amplifier
VDD RD VO RL Vin RS Rin C1 R2 RS Vin Rin R1 RD VDD VO RL

C1 RG

MOSFET-self-bias CG amplifier

MOSFET-voltage divider-bias CG amplifier

EE2603-02 Electronic Circuit Analysis

14

CG amplifier analysis
VDD RD VO RL Vin RS Rin

Vo = gmv gs (RD // RL ) but Vin = v gs gmv gs (RD // RL ) Vo A = = = gm (RD // RL ) V Vin v gs

C1 RG

Vin = v gs and I = gmv gs

v V Rin = RS // in I = RS // gs g v m gs = RS // 1 g m
Gate capacitor short

G + vgs RS S +

D + gmvgs vin I vo Rin RG RL

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EE2603-02 15 Electronic Circuit Analysis