Documente Academic
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Design Capture and Verification Verilog-HDL : behavioural, data-flow, gate and switch levels. Physical Layout level (IDE) HDL-based Simulation and Synthesis (IDE) Full-custom ASIC tools : DRC, ERC, Extraction etc. (SM)
IC Test and Design for Test (IE) Physical faults, the Fault Cycle, Reliability Test Pattern Generation and Fault Simulation DfT Strategies and Techniques (Scan, BILBO, BIST)
Useful sources of information Baker, Li and Boyce, CMOS Circuit Design, Layout, and Simulation, IEEE Press, ISBN 0-7803-3416-7 Weste and Eshraghian, Principles of CMOS VLSI Design, Addison-Wesley Pucknell and Eshraghian, Basic VLSI Design, Prentice-Hall
MOSFET and Bipolar devices and subsystem IC Production Process Basic design, architectures and design rules
IC Brief History MOS Transistors N-Type (NMOS) Transistor P-Type (PMOS) Transistor Logic gates
IC History -- Brief
1925 J Lilienfeld proposed basic principle behind the MOS FET 1935 O Heil proposed a structure similar to modern MOS Tr. 1925 to 1960s problems with materials foiled early attempts Invention of the Bipolar Tr. led to decline of interest in MOS Trs
IC Transistor Count
Since 1961 the number of Trs that can be successfully fabricated on single chip has doubled almost every year (Moors Law)
Transistors/IC
Moors Paper
Year
2000
The Pitch
Tr Feature Size
Tr Feature size in microns
30
10
Year
Transistor Layout/Size
Polysilicon
FET MOS
Diffusion
SiO2 Insulator
Yield decreases rapidly with increasing die size The amount of wafer wastage around the periphery is reduced with smaller chips
Substrate
2um
2 micron Technology No of Squares = (2x10-2)2 / (2x10-6)2 =108 If each Tr require 50 squares then no of transistors = 2 x 106 0.2 micron Technology No of Tr = (2x10-2)2 / [(0.2x10-6)2 x 50] = 2 x 108 (ie 100* )
Microns
10
Year
Independent Study 1
Use the library (books, journals, Internet) to investigate the trends and directions in ASIC manufacturing Process Technology
Methods used Technology features & design rules Yield issues Costs
MOS Transistors
Doping of wafers
Silicon has 4 electrons in the valence band Wafer is doped with
donor (with 5 valence electrons) atoms, e.g. Phosphorus for n-type wafer acceptor atoms, e.g. Boron for p-type wafer
P-type and n-type wafers can be used to design circuits. Commonly, p-type wafers are used.
N-type wafer
PMOS transistors are fabricated directly in the ntype wafer (substrate) NMOS transistors are fabricated in an p-well
n+
n+
n-Type
Enhancement Mode Transistor
Drain
N+
N+
n implanted channel
p-Type
Enhancement Mode Transistor
N-Well
p implanted channel
b g
a g=0 a
b g=1
nMOS Tr is off
n+ Transistor Channel without active Carriers (electrons) n+
P-Substrate
NMOS Tr is on
n+ Transistor Channel with inverted layer (electrons)
electrons
n+
P-Substrate
b g
a g=1 a
b g=0
PMOS Tr is off
p+ p+
N-Substrate
PMOS Tr is on
p+
holes
p+
N-Substrate
Vgs is constant
Vgs = 5v a=0
Id ON OFF 0 V th
Discharge to 0v
Parasitic Capacitance
Vgs
G=5v
Vgs
Id ON OFF 0 V th
x Vgs
G=0 v
Vgs =ve
a=0v
Id O N
x
Vth 0
OFF
Discharges to (~Vth) v
Vgs
Parasitic Capacitance
G=0v
a=5v
Id O N
x
Vth 0
OFF
Charges to 5 v
Vgs
Parasitic Capacitance
Exercise
x y z
What are the out values (B1, B2 & B3) when inputs A, x, y & z assumes all possible logic combinations of 0 and Vdd?
A
x y z
B1 B2
x y z
A A
B3
Transmission Gate
Combine a p- and ntype transistors to build a perfect switch p-gate must be connected to the complement of n-type. The switch is
ON when C=1 OFF when C=0
C a
P-Type b
N-Type
The Well
N-well P-type epitaxial layer (p-)
P-type Substrate
P-type substrate 1
P-type substrate 2
1- Clean , bare wafer 2- 1st step is to grow oxide on the surface of the wafer Si + O2 SiO2 (dry) or Si + 2H2O SiO2 + 2H2 (wet) Reaction with steam, H2O, results in wet oxide, or with O2 alone resulting in dry oxide. Both The oxide growth consumes silicon Consumed silicon 0.45 Total insulator thickness
3 Deposit photosensitive resist (photoresist) layer across the wafer. Bake the resist
Hardened resist
P-type substrate 7
P-type substrate 9
P-type substrate 10
9 Etch the exposed oxide. The etchant etches under the resist 10 Remove the resist
P-type substrate 2
P-type substrate 3
P-type substrate 4
P-type substrate 7
N-Well
P-type substrate 8
Resistance
Layer can be used as resistor
A B
N-well P-substrate
Layers Resistance
N-Type Diffusion P-Type Diffusion Polysilicon Metal1 Metal2 N-Well 60 ohm/sq 80 ohm/sq 25 ohm/sq 0.04 ohm/sq 0.03 ohm/sq 1500 ohm/sq
Capacitance
Parasitic capacitance
Bottom capacitance
Layers Capacitance
Metal1 to Polysilicon Metal2 to Polysilicon Metal2 to Substrate Metal2 to Metal1 50 X 10-6 pF/u2 20 X 10-6 pF/u2 11 X 10-6 pF/u2 45 X 10-6 pF/u2
P-substrate
N-well
Can be used for
fabrication of p-channel transistors as a resistor, with large enough voltages at either resistors sides to keep the substrate / well diode from forward biasing.