FQD1N60C / FQU1N60C

January 2009

QFET

FQD1N60C / FQU1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
1A, 600V, RDS(on) = 11.5 @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

RoHS Compliant

D D
!

D-PAK
FQD Series

I-PAK
G D S
FQU Series

G!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQD1N60C / FQU1N60C 600 1 0.6 4 30

(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

33 1 2.8 4.5 2.5 28 0.22 -55 to +150 300

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ ---Max 4.53 50 110 Units C/W C/W C/W
Rev. A1, January 2009

* When mounted on the minimum pad size recommended (PCB Mount)

2009 Fairchild Semiconductor Corporation

FQD1N60C / FQU1N60C

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = VDS = 40 V, ID = 0.5 A 0.5 A
(Note 4)

2.0 ---

-9.3 0.75

4.0 11.5 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 19 3.5 170 25 4.5 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V
(Note 4, 5)

VDD = 300 V, ID = 1.1 A, RG = 25

(Note 4, 5)

--------

7 21 13 27 4.8 0.7 2.7

24 52 36 64 6.2 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/s
(Note 4)

------

---190 0.53

1 4 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 1.1 A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2009 Fairchild Semiconductor Corporation

Rev. A1. January 2009

FQD1N60C / FQU1N60C

Typical Characteristics

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :

10

150 C

-55 C 25 C
o

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

Notes : 1. VDS = 40V 2. 250 s Pulse Test

10

-2

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

30

RDS(ON) [ ], Drain-Source On-Resistance

VGS = 10V
20

I DR , Reverse Drain Current [A]

25

10

15

10

VGS = 20V

150 25
10
-1

5
Note : TJ = 25

Notes : 1. VGS = 0V 2. 250 s Pulse Test

0 0.0

0.5

1.0

1.5

2.0

2.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature

250

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

200

10

VDS = 120V VDS = 300V

Ciss

VGS, Gate-Source Voltage [V]

Capacitance [pF]

150

VDS = 480V

Coss

100
Notes ; 1. VGS = 0 V 2. f = 1 MHz

50

Crss

2
Note : ID = 1A

0 -1 10

10

10

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Norm alized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 0.5 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

1.2

Figure 8. On-Resistance Variation vs Temperature

10

Operation in This Area is Limited by R DS(on)

1.0

100 s

ID, Drain Current [A]

10

1 ms 10 ms 100 ms DC

10

-1

Notes :

1. TC = 25 C
o

2. TJ = 150 C 3. Single Pulse

10

-2

10

10

10

10

ID, Drain Current [A]

0.8

0.6

0.4

0.2

0.0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs Case Temperature

( t), T h e rm a l R e s p o n s e

D = 0 .5
10
0

0 .2 0 .1 0 .0 5 0 .0 2

N o te s : 1 . Z J C ( t) = 4 .5 3 /W M a x . 2 . D u ty F a c to r, D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t)

PDM t1 t2

JC

10

-1

0 .0 1 s in g le p u ls e

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS 10V Qgs Qg

VGS DUT
3mA

Qgd

Charge

Resistive Switching Test Circuit & Waveforms

VDS RG 10V VGS

RL VDD

VDS

90%

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

VDS ID RG 10V
tp

L BVDSS IAS VDD DUT VDD

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD

ID (t) VDS (t)

tp

Time

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD

Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Mechanical Dimensions

TO-252 (DPAK) (FS PKG Code 36)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: millimeters

Part Weight per unit (gram): 0.33

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

Mechanical Dimensions

I - PAK

Dimensions in Millimeters

2009 Fairchild Semiconductor Corporation

Rev. A1, January 2009

FQD1N60C / FQU1N60C

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Rev. I37
2009 Fairchild Semiconductor Corporation

Rev. A1. January 2009