MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES q High breakdown voltage (BV CEO 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q Driving available with PMOS IC ouput q Wide operating temperature range (Ta = 20 to +75C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard MOS-bipolar logic IC FUNCTION The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M54523FP is enclosed in a molded small flat package, enabling space-saving design. PIN CONFIGURATION
16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9

IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6 IN7 7 GND

8

OUTPUT

COM COMMON

16P4(P) Package type 16P2N-A(FP)

CIRCUIT DIAGRAM
COM OUTPUT INPUT 2.7k

5k 3k

GND

The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used.

Unit :

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current

(Unless otherwise noted, Ta = 20 ~ +75 C)

Conditions Output, H Current per circuit output, L

Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board

Ratings 0.5 ~ +50 500 0.5 ~ +30 500 50 1.47(P)/1.00(FP) 20 ~ +75 55 ~ +125

Unit V mA V mA V W C C

Jan.2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
(Unless otherwise noted, Ta = 20 ~ +75C)

RECOMMENDED OPERATING CONDITIONS

Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) H input voltage L input voltage Parameter

Limits min 0 0 0 3.85 3.4 0 typ max 50 400

Unit V

IC

VIH VIL

Duty Cycle P : no more than 8% FP : no more than 8% Duty Cycle P : no more than 30% FP : no more than 25% IC 400mA IC 200mA

mA 200 25 25 0.6 V V

ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE(sat) II VF IR h FE Parameter

(Unless otherwise noted, Ta = 20 ~ +75C)

Test conditions ICEO = 100A

Limits min 50 1000 typ* 1.2 1.0 1.2 9.5 1.4 2500 max 2.4 1.6 1.8 18 2.4 100

Unit V V mA V A

Collector-emitter breakdown voltage

VI = 3.85V, I C = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25C

* : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions.

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 C)

Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min typ 10 120 max Unit ns ns

NOTE 1 TEST CIRCUIT

INPUT Vo

TIMING DIAGRAM
INPUT 50% 50%

Measured device OPEN PG

RL OUTPUT
OUTPUT 50% 50%

50

CL
ton toff

(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VP = 3.85VP-P (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes

Jan.2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Collector Current Characteristics 500

Thermal Derating Factor Characteristics 2.0

Power dissipation Pd (W)

1.5

M54523P

Collector current Ic (mA)

400

300

1.0

M54523FP

200
VI = 3.85V
Ta = 75C Ta = 25C Ta = 20C

0.5

100

25

50

75

100

0.5

1.0

1.5

2.0

Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M54523P)

1

Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M54523P)

500

500

Collector current Ic (mA)

Collector current Ic (mA)

400
2

400
1

300
3 4 5 6 7

300
2

200
The collector current values represent the current per circuit. Repeated frequencyy 10Hz The value the circle represents the value of the simultaneously-operated circuit. Ta = 25C

200
The collector current values represent the current per circuit. Repeated frequency 10Hz The value the circle represents the value of the simultaneously-operated circuit. Ta = 75C

100

100

3 4 5 6 7

20

40

60

80

100

20

40

60

80

100

Duty cycle (%) Duty Cycle-Collector Characteristics (M54523FP)

Duty cycle (%) Duty Cycle-Collector Characteristics (M54523FP)

500

500
1

Collector current Ic (mA)

300
2 3 4 5 6 7

Collector current Ic (mA)

400

400

300

200
The collector current values represent the current per circuit. Repeated frequency 10Hz The value the circle represents the value of the simultaneously-operated circuit. Ta = 25C

200

2 4 The collector current values represent the current per circuit. 5 Repeated frequency 10Hz 76 The value the circle represents the value of the simultaneously-operated circuit. Ta = 75C 3

100

100

20

40

60

80

100

20

40

60

80

100

Duty cycle (%)

Duty cycle (%)

Jan.2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Input Characteristics 16 104

DC Amplification Factor Collector Current Characteristics

7 5 3

Input Current II (mA)

12
Ta = 75C Ta = 25C Ta = 20C

DC amplification factor hFE

VCE = 4V Ta = 75C Ta = 25C Ta = 20C

103
7 5 3

16

24

32

102 1 10

5 7 102

5 7 103

Input voltage VI (V) Grounded Emitter Transfer Characteristics 500 500

Collector current IcC (mA) Clamping Diode Characteristics

Forward bias current IF (mA)

Collector current Ic (mA)

400
VCE = 4V Ta = 75C Ta = 25C Ta = 20C

400

Ta = 75C Ta = 25C Ta = 20C

300

300

200

200

100

100

0.5

1.0

1.5

2.0

Input voltage VI (V)

Forward bias voltage VF (V)

Jan.2000

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