2SK4004 01MR

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd.
They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd.
DRAWN
DATE
Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05

Date Spec. No. Device Name Type Name : : : :
NAME
APPROVED
SPECIFICATION
Jan.-31-2005
2SK4004-01MR
Power MOSFET
MS5F5983
DWG.NO.
MS5F5983
1 / 18
Fuji Electric Device Technology Co.,Ltd.
H04-004-05
This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd.
2005
Date
Jan.-31
July.-3 2006
enactment
Classification
Revision a
Index
Revised Records
Revised RDS(on)-tch graph.
DWG.NO.
Content
MS5F5983
Drawn Checked Checked Approved
2 / 18
H04-004-03
1.Scope 2.Construction 3.Applications 4.Outview
This specifies Fuji Power MOSFET 2SK4004-01MR N-Channel enhancement mode power MOSFET for Switching TO-220F Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25 (unless otherwise specified) C Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID IDP VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Characteristics 500 500 9.0 36.0 30 9.0 349 4.8 20 5 48 W 2.16 150 -55 to +150 2 C C kVrms t=60sec f=60Hz Unit V V A A V A mJ mJ Note *1 Note *2 Note *3 VGS=-30V Remarks
kV/ VDS500V s kV/ Note *4 s Tc=25C Ta=25C
6.Electrical Characteristics at Tc=25 (unless otherwise specified) C Static Ratings Description Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) Symbol Conditions ID= 5 20 A VGS=0V ID= 5 20 A VDS=VGS VDS=500V Tch=25C VGS=0V VDS=400V Tch=125C VGS=0V VGS= 30V VDS=0V ID=4.5A VGS=10V
DWG.NO.
min.
typ.
max.
Unit
500 2.5 -
3.5 25
V V A
250
100
nA
0.65
0.85
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Dynamic Ratings Description Forward Transconductance g fs Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss td(on) Turn-On Time tr td(off) Turn-Off Time
Symbol
Conditions ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz
min.
typ.
max.
Unit
6.0 -
12.0 800 100 6.0
1200 150 9
Ciss Coss
pF
Vcc=300V VGS=10V ID=4.5A RGS= 0 1 Vcc=250V ID=9.0A VGS=10V 12 5.6 40 8.0 24 7.0 6.0 18 8.4 60 12 36 10.5 9.0 nC ns
tf QG QGS QGD
Total Gate Charge Gate-Source Charge Gate-Drain Charge Reverse Diode Description Diode Forward
Symbol
Conditions IF=9.0A VGS=0V IF=9.0A VGS=0V -i t1 0 /s d/ = 0 A d Tch=25C Tch=25C
min.
typ.
max.
Unit
On-Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr 7.Thermal Resistance Description Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-a)
0.95
1.43
0.5
4.5
Symbol
min.
typ.
max. 2.604 58
Unit C/W C/W
Note *1 : Tch150C, See Fig.1 and Fig.2 Note *2 : Starting Tch=25,IAS=4.0A,L=40.0mH,Vcc=50V,RG= 0 ,e Fg1a dFg2 5 S e i n i . . EAS limited by maximum channel temperature and avalanche current. See to the 'Maximum Avalanche Energy' graph of page 17/18. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Maximum Transient Thermal impedance' graph of page 18/18. Note *4 : IF-ID, i t5 A ,cBVDSS,Tch150C - / = 0 /s c dd V
a
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DWG.NO.
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H04-004-03
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0 50 +10V
D.U.T
DWG.NO.

IDP L
Vcc=50V Single Pulse Test
MS5F5983
BVDSS VGS
5 / 18
Vcc
ID
VDS
H04-004-03
8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times)
Test No. Test Items 1 Terminal Strength (Tensile) Testing methods and Conditions Reference Standard Sampling number Acceptance number
Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 4010Ncm TO-3P,TO-3PF,TO-247 : 5010Ncm TO-3PL : 7010Ncm frequency : 100Hz to 2kHz Acceleration : 200m/s 2 Sweeping time : 4min. 48min. for each X,Y&Z directions. Peak amplitude: 15km/s 2 Duration time : 0.5ms 3times for each X,Y&Z directions.
EIAJ ED4701/400 method 401
15
2 Terminal Strength (Bending)

15
Mechanical test methods
3 Mounting Strength
EIAJ ED4701/400 method 402 EIAJ ED4701/400 method 403 EIAJ ED4701/400 method 404
(0:1)
15
4 Vibration
15
5 Shock
15
6 Solderability
Solder temp. : 245 C 5 Immersion time : 5 0.5sec

Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. ----15
7 Resistance to Soldering Heat
Solder temp. : 260 C 5 Immersion time : 10 1sec Number of times : 1times
15
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DWG.NO.
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H04-004-03
Test No.
Test Items 1 High Temp. Storage 2 Low Temp. Storage 3 Temperature Humidity Storage 4 Temperature Humidity BIAS 5 Unsaturated Pressurized Vapor 6 Temperature Cycle
Testing methods and Conditions
Reference Standard EIAJ ED4701/200 method 201 EIAJ ED4701/200 method 202 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 105
Sampling number 22
Acceptance number
Temperature : 150+0/-5C Test duration : 1000hr Temperature : -55+5/-0C Test duration : 1000hr Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS (max) * 0.8 Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48hr
22
22
Climatic test methods
22
(0:1)
22
High temp.side : 1505C/30min. Low temp.side : -555C/30min.

RT : 5C 35C/5min. Number of cycles : 100cycles Fluid : pure water(running water)
22
7 Thermal Shock
High temp.side : 100+0/-5C Low temp.side : 0+5/-0C

Duration time : HT 5min,LT 5min Number of cycles : 100cycles
EIAJ ED4701/300 method 307 EIAJ ED4701/100 method 106 EIAJ ED4701/100 method 101 EIAJ ED4701/100 method 101
22
Endurance test methods
8 Intermittent Operating Life 9 HTRB (Gate-source) 10 HTRB (Drain-Source)
c 9 d ge T = 0 e re TchTch(max.) Test duration : 3000 cycle

Temperature : Tch=150+0/-5C Bias Voltage : +VGS (max) Test duration : 1000hr Temperature : Tch=150+0/-5C Bias Voltage : VDS (max) Test duration : 1000hr
22
22
(0:1)
22
Failure Criteria Symbols Item Failure Criteria Lower Limit Upper Limit V A A V S V ----Unit
Breakdown Voltage BVDSS LSL ----Zero gate Voltage Drain-Source Current IDSS ----USL Gate-Source Leakage Current IGSS ----USL Gate Threshold Voltage VGS(th) LSL USL Drain-Source on-state Resistance RDS(on) ----USL Forward Transconductance gfs LSL ----Diode forward on-Voltage VSD ----USL Marking Soldering ----With eyes or Microscope and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150C.
Outview
Electrical Characteristics
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H04-004-03
DWG.NO.
MS5F5983
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9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFET should be used in products within their absolute maximum rating(voltage, current, s temperature, etc.). The MOSFET may be destroyed if used beyond the rating. s We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Whn a dn M S E shlt mb t cs ( ca ea d o oc t l d a de nl e hn lg O F T,o h i d e yh ae p kg) n dn t hh e s n tmi s e a tu e a r a. It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats.
MS5F5983
DWG.NO.
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H04-004-03
Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M ) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFET become even hotter during operation. Design the arrangement s to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 260 5 C 350 10 C Duration 10 seconds 1 3.5 seconds 0.5
The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw M3 Tightening torques 30 Ncm 50 40 Ncm 60 60 Ncm 80 Note flatness : < =30 m roughness : <=10 m Plane off the edges : C<=1.0mm
M3 M3
MS5F5983
DWG.NO.
10 / 18
H04-004-03
T e eti solhv alns wtn3 ado gns wtn 0m. l ,eph th n g h has k hu ae ft s ii 0m n ruhes ii1 As ke t i t i n d ae h h o eg en torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage The MOSFETs must be stored at a standard temperature of 5 to 35C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFET Therefore store the MOSFETs in a place where the temperature is steady. s. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 11.Appendix This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by l n i coU Ce Ar tf S a A law.
If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights.
MS5F5983
DWG.NO.
11 / 18
H04-004-03
ID [A]
PD [W]
10
12
14
16
18
20
10
20
30
40
50
60
0
0 0 25 50
DWG.NO.

75 Tc [ C] 100 125
Allowable Power Dissipation PD=f(Tc)
Typical Output Characteristics ID=f(VDS):80 pulse test,Tch=25 s C
10 12 VDS [V] 20V 10V 6.0V 5.5V

150
14
16
18
4.5V
5.0V
VGS=4.0V
20
22
MS5F5983
12 / 18
H04-004-03
gfs [S]
ID[A]
100
0.01
100
0.1 10 0.1 1 0 1 2 3 4
10
0.1
DWG.NO.

5 VGS[V] 6 7 8 9
Typical Transconductance gfs=f(ID):80 pulse test,VDS=25V,Tch=25 s C
Typical Transfer Characteristic ID=f(VGS):80 pulse test,VDS=25V,Tch=25 s C
ID [A] 10
10
MS5F5983
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H04-004-03
RDS(on) [ ]
RDS(on) [ ]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
VGS= 4.0V 4.5V
-25
25
max.
5.0V
DWG.NO.

10 ID [A] 12 14 5.5V 16
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 pulse test,Tch=25 s C
50 Tch [ C]
typ.
75
100
6.0V 10V 20V
125
18 20
150
MS5F5983
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H04-004-03
VGS [V]
VGS(th) [V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
12
14
16
18
20
-50
-25
10
15
25
Vcc= 100V 250V 400V
Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 C
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA
Qg [nC]
min.
max.
50 75 Tch [ C]
DWG.NO.

100 125 150
20
25
30
35
40
MS5F5983
45
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H04-004-03
C [F]
IF [A]
100p
10p
10n
1p
1n
100
10
1 10
-1
0.1 0.00 10
0
0.25
0.50
1.00
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
VSD [V] 10
1
VDS [V]
DWG.NO.

10
2
0.75 Crss
1.25
1.50
Ciss
Coss
1.75
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 pulse test,Tch=25 s C
MS5F5983
10
3
2.00
16 / 18
H04-004-03
EAS [mJ]
t [ns]
10
0 1 2
10
10
10
3
100
150
200
250
300
350
400
50
0 10
-1
IAS=9A
tr
IAS=6A
IAS=4A
tf
25 td(on) 10
0
td(off)
50
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V
starting Tch [ C]
DWG.NO.

ID [A]
10
1
75
100
125
MS5F5983
10
150
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H04-004-03
Zth(ch-c) [/W]
Avalanche Current I AV [A]
10
10 10 10 10
10
10
10-1
100
101
-3
-2 -1 0 1
-2
10-8
10-6 10-7 10-6
10-5
Single Pulse
10-4
tAV [sec]
DWG.NO.

10-5 10-4
10-3 10-3
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=50V
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
t [sec]
10-2
10-1
MS5F5983
10-2
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100
H04-004-03

2SK4004 01MR

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This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd.

Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05

Fuji Electric Device Technology Co.,Ltd.

Revised RDS(on)-tch graph.

Fuji Electric Device Technology Co.,Ltd.

Drawn Checked Checked Approved

1.Scope 2.Construction 3.Applications 4.Outview

kV/ VDS500V s kV/ Note *4 s Tc=25C Ta=25C

Fuji Electric Device Technology Co.,Ltd.

Conditions ID=4.5A VDS=25V VDS=25V VGS=0V f=1MHz

12.0 800 100 6.0

Conditions IF=9.0A VGS=0V IF=9.0A VGS=0V -i t1 0 /s d/ = 0 A d Tch=25C Tch=25C

Unit C/W C/W

Fuji Electric Device Technology Co.,Ltd.

Fig.1 Test circuit

Fig.2 Operating waveforms

Fuji Electric Device Technology Co.,Ltd.

EIAJ ED4701/400 method 401

2 Terminal Strength (Bending)

EIAJ ED4701/400 method 401

Mechanical test methods

Solder temp. : 245 C 5 Immersion time : 5 0.5sec

7 Resistance to Soldering Heat

Solder temp. : 260 C 5 Immersion time : 10 1sec Number of times : 1times

EIAJ ED4701/300 method 302

Fuji Electric Device Technology Co.,Ltd.

Testing methods and Conditions

Climatic test methods

High temp.side : 1505C/30min. Low temp.side : -555C/30min.

High temp.side : 100+0/-5C Low temp.side : 0+5/-0C

Endurance test methods

8 Intermittent Operating Life 9 HTRB (Gate-source) 10 HTRB (Drain-Source)

c 9 d ge T = 0 e re TchTch(max.) Test duration : 3000 cycle

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co.,Ltd.

Allowable Power Dissipation PD=f(Tc)

Typical Output Characteristics ID=f(VDS):80 pulse test,Tch=25 s C

10 12 VDS [V] 20V 10V 6.0V 5.5V

Fuji Electric Device Technology Co.,Ltd.

Typical Transconductance gfs=f(ID):80 pulse test,VDS=25V,Tch=25 s C

Typical Transfer Characteristic ID=f(VGS):80 pulse test,VDS=25V,Tch=25 s C

VGS= 4.0V 4.5V

Fuji Electric Device Technology Co.,Ltd.

Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V

Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 pulse test,Tch=25 s C

6.0V 10V 20V

Vcc= 100V 250V 400V

Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25 C

Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA

Fuji Electric Device Technology Co.,Ltd.

Typical Capacitance C=f(VDS):VGS=0V,f=1MHz

Fuji Electric Device Technology Co.,Ltd.

Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 pulse test,Tch=25 s C

Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10

Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V

Fuji Electric Device Technology Co.,Ltd.

10-6 10-7 10-6

Fuji Electric Device Technology Co.,Ltd.