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NPN Silicon RF Transistor

BFP450

3

For medium power amplifiers
Compression point P -1dB = +19 dBm at 1.8 GHz

maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz

Transition frequency f T = 24 GHz
Gold metallization for high reliability
SIEGET  25 GHz f T - Line

2 1
VPS05605

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package

BFP450
Maximum Ratings Parameter

ANs

1=B

2=E

3=C

4=E

SOT343

Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg

Value 4.5 15 1.5 100 10 450 150 -65 ... 150 -65 ... 150

Unit V

Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS
96 C 1) Junction temperature Ambient temperature Storage temperature

mA mW C

Thermal Resistance Junction - soldering point 2) RthJS

120

K/W

1T is measured on the emitter lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA

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Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 4 V V(BR)CEO ICBO IEBO hFE 4.5 50 5 80 typ.

BFP450

Unit max. V nA A -

600 100 150

AC characteristics (verified by random sampling) Transition frequency fT IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gma Power gain, maximum available 1) IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 50 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50
Third order intercept point IP3 IC = 50 mA, VCE = 3 V, ZS=ZSopt , ZL =ZLopt , f = 1.8 GHz 1dB Compression point P-1dB IC = 50 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL =ZLopt
1G 2 1/2 ma = |S21 / S12 | (k-(k -1) )

GHz 15 24 17 0.48 1.2 1.75 1.25 0.8 dB

pF

15.5

11.5

29

dBm

19

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SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data

BFP450

IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =

0.13125 24.165 1.5563 13.461 0.70543 2.1659 3.2276 7.5068 0.017655 1.1487 2.6912 0 3

fA V V -

BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =

76.123 0.58905 21.254 0.25878 5.403 0.45346 0.95292 0.69972 0 0.50644 0 0 0.91274

A A

NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM

0.79652 28.341 1.2966 0.012292 0.013181 0.50084 0.48672 0.66148 1049.5 0.28285 0.75 1.11 300

fA fA mA

fF ps mA V ns -

V deg F -

V fF V eV K

C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :

IS =

25

fA

N=

1.05

RS =

All parameters are ready to use, no scaling is necessary

Package Equivalent Circuit:

C CB

L BI = L BO = L EI =
C C-EDiode C CE

0.31 0.63 0.2 0.05 0.29 0.68 208 3.2 213

nH nH nH nH nH nH fF fF fF

L BO B

L BI

Transistor Chip E

L CI

L CO

L EO = L CI = L CO = CBE = CCB = CCE =

C BE L EI

L EO E
EHA07389

Valid up to 6GHz

The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection.

Extracted on behalf of Infineon Technologies AG by: Institut fr Mobil-und Satellitentechnik (IMST)

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

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For non-linear simulation:

BFP450

 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.  If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.

 Simulation of package is not necessary for frequencies < 100MHz.

Note:

For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model.

 This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not effect normal operation.

C B

E
EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

 Higher gain because of lower emitter inductance.  Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe. Please note, that the broadest lead is the emitter lead.

Common Emitter S- and Noise-parameter

For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

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BFP450

Total power dissipation Ptot = f (TS )

Transition frequency fT = f (IC)

f = 1 GHz VCE = parameter in V

500
mW

28
GHz 2 to 4 1.5 1 0.75

24 400 350 22 20

P tot

300 250 200

fT

18 16 14 12 10
0.5

150 100 50 0 0 120 C

8 6 4 2 20 40 60 80 100 150 0 0 20 40 60 80
mA

120

TS

IC

Permissible Pulse Load RthJS = f (tp)

Permissible Pulse Load P totmax/P totDC = f (tp)

10 3

10 1

K/W

Ptotmax / PtotDC

RthJS

10 2

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0

10 1 -7 10 10
-6

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

10

-5

10

-4

10

-3

10

-2

10

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

tp

tp

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BFP450

Power gain Gma, Gms , |S21 |2 = f ( f )

VCE = 2V, IC = 50 mA
48
dB

Power gain Gma, Gms = f (I C)

VCE = 2V f = parameter in GHz
28
dB

40 36

24 22 20

0.9

32

28 24 20 16 12 8 4 0 0.0

Gms

18 16 14 12 10 8
1.8 2.4 3 4 5 6

G ma |S21|2

6 4 2

1.0

2.0

3.0

4.0

GHz

6.0

0 0

20

40

60

80

mA

120

IC

Power gain Gma, Gms = f (VCE)

IC = 50 mA f = Parameter in GHz
26
dB 0.9

Collector-base capacitance Ccb = f (VCB) f = 1MHz

1.2

22 20 18

pF

16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

1.8 2.4

Ccb

0.8

0.6
3 4

0.4
5 6

0.2

4.5

0.0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

4.0

VCE

VCB

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BFP450

Noise figure F = f (IC )

VCE = 2 V, ZS = ZSopt
3.0

Noise figure F = f (IC)

VCE = 2 V, f = 1.8 GHz
4.5
dB

dB

3.5 2.0 3.0

F
2.5 1.5 2.0 1.0 0.5

f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz

1.5 1.0 0.5

ZS = 50Ohm ZS = ZSopt

0.0 0

10

20

30

40

50

60

70

80 mA

100

0.0 0

10

20

30

40

50

60

70

80 mA

100

IC

IC

Noise figure F = f ( f )
VCE = 2 V, ZS = ZSopt
3.0

Source impedance for min.

Noise Figure versus Frequency

VCE = 2 V, IC = 10 mA / 50 mA
+j50

dB

+j25

+j100

+j10 2.0

1.8GHz

0.9GHz

1.5

10

25
2.4GHz

50

100

1.0

3GHz

IC = 50 mA IC = 10 mA
0.5

-j10
4GHz

10mA 50mA

-j25 -j50

-j100

0.0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5 GHz

4.5

Aug-20-2001