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  • 2 5 Integrated Circuit Fabrication Process Etching Student

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    querer143_933912502
    60 vizualizări16 pagini
    1. Etching is a process used in integrated circuit fabrication to chemically remove layers from a wafer surface using an etchant. 2. There are two main etching methods: wet etching uses chemical baths while dry etching uses reactive gases like plasma to etch at a microscopic level. 3. Etching is performed for various purposes in the fabrication process such as removing photoresist, unneeded metal layers, and patterning transistors and interconnects on a chip.

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    1. Etching is a process used in integrated circuit fabrication to chemically remove layers from a wafer surface using an etchant. 2. There are two main etching methods: wet etching uses chemical baths while dry etching uses reactive gases like plasma to etch at a microscopic level. 3. Etching is performed for various purposes in the fabrication process such as removing photoresist, unneeded metal layers, and patterning transistors and interconnects on a chip.

    Drepturi de autor:

    Attribution Non-Commercial (BY-NC)
    Descărcați ca PDF, TXT sau citiți online pe Scribd
    Indicator pentru conținut neadecvat
    60 vizualizări16 pagini

    2 5 Integrated Circuit Fabrication Process Etching Student

    Încărcat de

    querer143_933912502
    1. Etching is a process used in integrated circuit fabrication to chemically remove layers from a wafer surface using an etchant. 2. There are two main etching methods: wet etching uses chemical baths while dry etching uses reactive gases like plasma to etch at a microscopic level. 3. Etching is performed for various purposes in the fabrication process such as removing photoresist, unneeded metal layers, and patterning transistors and interconnects on a chip.

    Drepturi de autor:

    Attribution Non-Commercial (BY-NC)
    Descărcați ca PDF, TXT sau citiți online pe Scribd
    Indicator pentru conținut neadecvat
    din 16

    UNIT 2 : INTEGRATED CIRCUIT FABRICATION PROCESS

    ETCHING
    E5163 IC DESIGN

    LEARNING OUTCOMES
    At the end of this topic, student should be able to: Define etching in integrated circuit fabrication. Explain why etching is used in wafer fabrication. Give examples of etchant and etched layer. Compare between wet etching (chemical etching) and dry etching (plasma etching).

    Etching is the process of using strong acid or etchant to cut into the unprotected parts of a metal surface to create a design. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. the masking material is a photoresist which has been patterned using photolithography.

    Two main methods of etching:


    wet etching dry etching

    1. In wafer formation process, after slicing ingot to removed any remaining damaged and contaminated regions. 2. In photolithography process to removed unnecessary photoresist. 3. In metallization process to removed unnecessary metal surface for making contact between devices.

    Use of chemicals where a batch of wafers is dipped into a highly concentrated pool of acid and the exposed areas of the wafer are etched away. Wet etching is good and fairly cheap and capable of processing many wafers quickly. The disadvantage is that wet etching does not allow the smaller critical geometries that are needed for today chips.

    Dry etching refers to any of the methods of etching that use gas instead of chemical etchants. Dry etching is capable of producing critical geometries that are very small. Ex: Plasma Etching
    Reactive Ion Etching in 80s

    Ex: Electron Cyclotron Resonance (ECR) and Inductively Coupled Plasmas (ICP) in 90s.

    PLASMA ETCHING
    Plasma etching uses a gas that is subjected to an intense electric field to generate the plasma state. The electric field is produced with coils that are wrapped around the chamber and exposed to a high level RF source. There are two different versions of this type of etching based on the shape of the chamber used.
    1. One consists of a barrel type chamber where the wafers are placed sitting up while the gas is flowed over the wafers and out through an exhaust pipe. 2. The second process uses a parallel plate reactor.

    BARREL CHAMBER

    PARALLEL PLATE REACTOR


    There are two plates that are used to give the gas the electric field rather than the coil that is wrapped around the barrel chamber. In plasma form, the gases used are very reactive, providing effective etching of the exposed surface. Plasma etching provides good critical geometry but the wafer can be damaged from the RF radiation.

    ETCHANT and ETCHED LAYER


    Material to be etched Silicon (Si) Wet etchants Nitric acid (HNO3) + hydrofluoric acid (HF)[3] Hydrofluoric acid (HF)[3] Buffered oxide etch [BOE]: ammonium fluoride (NH4F) and hydrofluoric acid (HF)[3] Piranha etch: sulfuric acid (H2SO4) + hydrogen peroxide (H2O2) 80% phosphoric acid (H3PO4) + 5% acetic acid + 5% nitric acid (HNO3) + 10% water (H2O) at 3545 C[3] Dry / Plasma etchants CF4, SF6, NF3[4] Cl2, CCl2F2[4] CF4, SF6, NF3[4]

    Silicon dioxide (SiO2)

    Photoresist

    O2 (ashing)

    Aluminium (Al)

    Cl2, CCl4, SiCl4, BCl3[4]

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