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1N5817 - 1N5819
Features
1.0 ampere operation at TA = 90C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
DO-41
COLOR BAND DENOTES CATHODE
Parameter
Average Rectified Current .375 " lead length @ TA = 90C Non-repetitive Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Storage Temperature Range Operating Junction Temperature
Value
1.0 25 1.25 12.5 80 -65 to +125 -65 to +125
Units
A A W mW/C C/W C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Symbol
VRRM VRMS VR IRM VFM C
Parameter
Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) TA = 25C @ 1.0 A 450 750 Maximum Instantaneous Reverse Current TA = 100C @ rated VR Maximum Instantaneous Forward Voltage @ 3.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 20 14 20
Device
1N5817 1N5818 30 21 30 0.5 10 550 875 110 1N5819 40 28 40
Units
V V V mA mA mV mV pF
600 900
1N5817-1N5819, Rev. A1
1N5817-1N5819
Typical Characteristics
Forward Current Derating Curve
1 FORWARD CURRENT (A)
Forward Characteristics
20 FORWARD CURRENT (A) 10
1N5817
0.75
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS
1N5819
0.5
1N5818
0.25
20
120
140
0.1 0.2
0.4
1.8
Junction Capacitance
400 200
T J = 25C
100 80 60 40 20 10 0.1
100
40 60 100
1N5817-1N5819, Rev. A1
TRADEMARKS
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ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER
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PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G