AO4914

30V Dual N-Channel MOSFET with Schottky Diode

General Description

Product Summary
Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) <20.5m (VGS=10V) RDS(ON) <28m (VGS=4.5V) ESD Protected 100% UIS Tested 100% Rg Tested

The AO4914 uses advanced trench technology to provide Q1(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) rectifier combination for use in DC-DC converters. A R DS(ON) <20.5m Schottky diode is co-packaged in parallel with the R DS(ON) <28m synchronous MOSFET to boost efficiency further. ESD Protected 100% UIS Tested 100% Rg Tested

SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A

SOIC-8 Top View Bottom View Top View S1/A G1 S2 G2 D1/K D1/K D2 D2 S1 Pin1 K G1 A S2 G2 D1 D2

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current TA=25 C C TA=70
C

Max Q2 30 20 8 6.5 40 19 18 2 1.3 -55 to 150

Units V V A A mJ W C Units V A

VGS TA=25 C TA=70 C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG

20 8 6.5 40 19 18 2 1.3

Max Schottky 30 3 2.2 20 2 1.28 -55 to 150

Pulsed Diode Forward Current C TA=25 C Power Dissipation

B

TA=70 C

W C

Junction and Storage Temperature Range

Rev 11: Mar. 2011

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AO4914

Thermal Characteristics - MOSFET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Thermal Characteristics - Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol
t 10s Steady-State Steady-State

Symbol
t 10s Steady-State Steady-State

Typ 48 74 32

Max 62.5 90 40

Units C/W C/W C/W

RJA RJL

Typ 48 74 32

Max 62.5 90 40

Units C/W C/W C/W

RJA RJL

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 11: Mar. 2011

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AO4914

Q1 Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V (Set VR=30V VR=30V, TJ=125 C VR=30V, TJ=150 C IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS=1A,VGS=0V VDS=0V,VGS=16V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8A TJ=125 C 1.2 40 17 23.5 20.5 30 0.45 0.5 3 575 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 115 50 0.5 12 VGS=10V, VDS=15V, ID=8A 6 730 165 82 1.1 15 7.5 2.5 3 5 VGS=10V, VDS=15V, RL=1.8 , RGEN=3 IF=8A, dI/dt=500A/s 3.5 19 3.5 8 8 865 215 120 1.7 18 9 20.5 29 28 1.8 Min 30 0.05 10 20 10 2.4 A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC mA Typ Max Units V

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current by Schottky leakage)

Maximum Body-Diode + Schottky Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 11: Mar. 2011

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Page 3 of 9

AO4914

Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 VGS=10V ID=8A 1.4 ID(A) 3V 5V 4V 3.5V 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C VGS=2.5V 30 VDS=5V

25 RDS(ON) (m ) VGS=4.5V 20

1.2

15

VGS=10V

17 5 VGS=4.5V 2 ID=4A 10

10 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5

0.8 0 75 100 125 150 175 Temperature ( C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 50

50 ID=8A

1.0E+01 1.0E+00 125C

40 RDS(ON) (m ) 125C 30

40
1.0E-01 IS (A) 25C 1.0E-02 1.0E-03

20

25C 1.0E-04

FET+Schottky

10 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 4

1.0E-05 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.0 0.2

Rev 11: Mar. 2011

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AO4914

Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=8A 8 Capacitance (pF) VGS (Volts) 1200 Ciss 900 1500

600 Coss 300 Crss 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 30

0 0 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 3 15

100.0

1000
10s
TA=25C

10.0

RDS(ON) limited

1.0

1ms 10ms

Power (W)

100s

100

ID (Amps)

10

0.1

TJ(Max)=150C TA=25C

DC

10s

0.0 0.01 0.1 1 VDS (Volts) 10 100

1 0.00001 0.001 0.1 10 1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=90C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse

PD Ton

T 100 1000

0.001 0.00001 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 0.001

Rev 11: Mar. 2011

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AO4914

Q2 Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions Min 30 1 Typ Max Units V 5 10 1.2 40 17 20.5 29 28 1 2.5 600 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 50 0.5 12 VGS=10V, VDS=15V, ID=8A 6 740 110 82 1.1 15 7.5 2.5 3 5 VGS=10V, VDS=15V, RL=1.8 , RGEN=3 IF=8A, dI/dt=500A/s 6 14 3.5 19 3.5 8 18 10 22 888 145 115 1.7 18 9 1.8 2.4 A A V A 23.5 20.5 30 0.75 m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage

ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C

VDS=0V, VGS=16V

VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8A TJ=125C VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 11: Mar. 2011

www.aosmd.com

Page 6 of 9

AO4914

Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 ID (A) 15 10 5 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 VGS=2.5V 3V ID(A) 5V 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance VGS=10V ID=8A 4V 3.5V 30 VDS=5V 25

125C 25C

30

25 RDS(ON) (m ) VGS=4.5V 20

1.4

1.2

15 VGS=10V 10 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5

17 5 VGS=4.5V 2 ID=4A 10

0.8 0 75 100 125 150 175 Temperature ( C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 50

40 ID=8A 35 30 RDS(ON) (m ) 25 20 -IS (A) 125C

1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 125C

40

15 10

25C

1.0E-04 1.0E-05

6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)

0.0

0.2

Rev 11: Mar. 2011

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AO4914

Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=15V ID=8A 8 1200 1000 Ciss Capacitance (pF) 800 600 400 Coss 2 200 Crss 0 0 3 6 12 Qg (nC) 9 Figure 7: Gate-Charge Characteristics 15 0 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 VGS (Volts) 6

100.0

1000
10s
TA=25C

10.0

RDS(ON)

100s 1ms 10ms

-ID (Amps)

1.0

Power (W)

100

0.1

TJ(Max)=150C TA=25C

DC

10

10s

0.0 0.01 0.1 1 -VDS (Volts) 10 100

1 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) 0.001

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01

PD Ton 0.0001 0.001 0.01 0.1 1

0.001 0.00001

T 10 100 1000

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 11: Mar. 2011

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AO4914

Gate Charge Test Circuit & W aveform

Vgs Qg

+
VDC

10V
VDC

DUT Vgs Ig

+ Vds -

Qgs

Qgd

Charge

Resistive Switching Test Circuit & W aveforms

RL Vds Vds

Vgs Rg

DUT

VDC

+ Vdd Vgs
t d(on) ton tr t d(off) toff tf

90%

10%

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR = 1/2 LIAR
2

BVDSS

VDC

+ Vdd Id

I AR

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Q rr = - Idt

Vds Isd Vgs Ig

Isd

IF

dI/dt I RM Vdd

VDC

+ Vdd Vds

Rev 11: Mar. 2011

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