GaAs I nfrared Emitter C CC

OPE5594A

The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.

FEATURESC
High-output powerC
Narrow beam angle
High reliability and long term stability
Available for pulse operating
C
APPLI CATI ONSC
Optical emitters
Optical switches
Smoke sensors
IR remote control
IR sound transmission

STORAGE
Condition : 5C~35C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.

MAXI MUM RATINGS (Ta=25C )
Item Symbol Rating Unit
Power Dissipation P
DC
150 m"
Forward current I
FC
100 m\
Pulse forward current
CCC1C
I
FPC
1.0 A
Reverse voltage V
RC
5.0 \
Operating temp. Topr. -25~+85 CC
Soldering temp.
CCCCCCCCCCCCCC2
Tsol. 260. CC
1
.Duty ratio =1/100, pulse width=0.1ms.
2
.Lead Soldering Temperature (2mm from case for 5sec.).

ELECTRO-OPTICALCHARACTERISTICS (Ta=25C)
Item Symbol Conditions Min. Typ. Max. Unit
Forward voltage V
F
I
F
=100mA 1.4 1.7 V
Reverse current I
R
V
R
=5V 10 A
Capacitance Ct f =1MHz 20 pF
Radiant intensity Ie I
F
=100mA 80 mW/
Peak emission wavelength
p
I
F
=50mA 940 nm
Spectral bandwidth 50% . I
F
=50mA 45 nm
Half angle . I
F
=100mA 10 deg.

2-0.5
2
4
.
0

M
i
n

2.5
2
.
0

Anode
Cathode
8
.
7


7
.
7


1
.
3

M
a
x

5
.
7

5
.
0

Tolerance : 0.2mm
CC
GaAlAs I nfrared Emitter OPE5594A
FORWARD CURRENT Vs.
FORWARD VOLTAGE
100

50

30
20

10
5
4
3
2

1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage V
F
(V)
Ta=25
RELATI VE RADIANT INTENSITY Vs.
AMBI ENT TEMP.
RELATI VE RADIANT INTENSITY Vs.
EMISSI ON WAVELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
800 850 900 950 1000 1050
Emission Wavelength (nm)
Ta=25
3
2

1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperature Ta( )
I
F
=50mA
ANGULAR DI SPLACEMENT Vs
RELATI VE RADIANT I NTENSI TY
20
30
40
50
60
70
80
-20
-30
-40
-50
-60
-70
-80
-90
-10 10
0
1.0 0.5 0 0.5 1.0
90
Relative Radiant intensity
Ta=25
RADIANT INTENSITY Vs.
FORWARD CURRENT.
FORWARD CURRENT Vs.
AMBI ENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta( )
Ta=25
400
200
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3 5 10 30 50 100 200 500
Forward Current I F(mA)
Ta=25