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Dept. of ECE, UNAM

UNIVERSITY OF NAMIBIA
FACULTY OF ENGINEERING AND IT
DEPARTMENT OF ELECTRONICS AND COMPUTER ENGINEERING
ANALOGUE ELECTRONICS II TEST 1 SOLUTIONS
Examiner: Josiah K. Makiche
1. Briefly explain the following phenomena as applicable to amplifiers:
a) Input impedance
b) Output impedance
c) Small signal operation
d) Transconductance [4 marks]
Solution:
a) Input impedance: This is the impedance seen looking into the input
terminals of the amplifier and it is equal to the ratio of input voltage to
input current. [1]
b) Output impedance: This is the Thevenin resistance seen looking into the
open-circuited output terminals of the amplifier. [1]
c) Small-signal operation: An amplifier is said to be operating under small-
signal conditions if the signal variations are small so that they do not
cause significant oscillations in the Q-point. Under these conditions, the
transistor parameters may be assumed constant. [1]
d) Transconductance: This is the ratio of drain current to gate-to-ground
voltage in FET amplifiers under specified DC operating conditions. [1]
2. The JFET amplifier shown in Fig. Q2 has 60k
d
r = , 3.9V
p
V = and
10mA
DSS
I = . The quiescent value of 9.24V
DS
V = .
a) Draw its small-signal model
b) Using the model, determine the input resistance
in
R , the output
resistance
out
R and the voltage gain /
L S
v v . [13 marks]
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Dept. of ECE, UNAM
3k
18V +
S
v
1M
920
50k
L
v
28k
Fig. Q2
Solution:
a) Applying KVL in the output DC circuit,
( )
DS DD D D S
V V I R R = +
From which we obtain,
18 9.24
2.23mA
3 0.92
DD DS
D
D S
V V
I
R R

= = =
+ +
[2]
3
0
2 2 10 10
5.13mS
3.9
DSS
m
p
I
g
V

= = =
0
2.23
5.13 2.42mS
10
D
m m
DSS
I
g g
I
= = = [2]
Alternatively, from
2
1
GS
D DSS
p
V
I I
V
| |
=


\ .
We obtain,
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Dept. of ECE, UNAM
2.23
1 3.9 1 2.06V
10
D
GS p
DSS
I
V V
I
| | | |
= = =


\ . \ .
3
2 2 10 10 2.06
1 1 2.42mS
3.9 3.9
DSS GS
m
p p
I V
g
V V

| |
| |
= = =




\ .
\ .
in
R
1M
60k 3k
3
2.42 10

gs
v
gs
v
gs
v s
v
[5]
b) 1M
in G
R R = = [1]
60k 3k 2.85k
out d D
R r R = = = [1]
( ) 2.42 2.85 6.9
v m d D
A g r R = = = [2]
1000 28
6.9 5.96
1000 50 28 2.85
in L L
vs v
s in s L out
R v R
A A
v R R R R
| | | |
= =

+ +
\ . \ .
| | | |
= =

+ +
\ . \ .
[2]
3. Briefly explain the following;
a) Gain-bandwidth product
b) Miller effect [4 marks]
Solution:
a) Gain-bandwidth product: It is the product of the mid-frequency gain of
an amplifier and bandwidth. [2]
b) Miller Effect: This is the amplifying property of the transistor at high
frequencies which increases the apparent value of the collector (or drain)
capacitance to the value + (1 )
c
A C , where A is amplifier gain and
c
C is
collector capacitance. [2]
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Dept. of ECE, UNAM
4. For the network shown in Fig. Q3,
a) Determine
e
r
b) Find the midband gain /
o i
v v
c) Calculate the stage input impedance
i
Z
d) Find the overall midband gain /
o s
v v
e) Determine the lower cut-off frequencies
Ls
f ,
Lc
f and
Le
f .
f) Determine the overall lower cut-off frequency.
g) Determine
Hi
f and
Ho
f
h) Find f

and
T
f
i) Sketch the frequency response for both low and high frequency
regions using Bode plot.
j) Determine the bandwidth. [23 marks]
470k
3k
0.91k
o
v
in
v
1F
6.8F
1F
4.7k
0.6k
100 =
20V
7pF, 6pF
11pF, 20pF
10pF
Wi bc
Wo be
ce
C C
C C
C
= =
= =
=
i
Z
Solution:
DC analysis: From the input circuit,
0
CC B B BE E E
V I R V I R =
( 1)
E B
I I = +
( 1) 0
CC B B BE B E
V I R V I R + =
20 0.7
34.3A
( 1) 470 (100 1)0.91
CC BE
B
B E
V V
I
R R

= = =
+ + + +
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Dept. of ECE, UNAM
100 34.3A 3.43mA
C B
I I = = =
3.43mA
E C
I I ~ = [2]
a) = = =
26mV 26mV
7.57
3.43mA
e
E
r
I
[1]
b) = = =
3000
396.3
7.57
C
v
e
R
A
r
[1]
b
i
c
i
b
i
B
R
s
v
+

o
r
L
v
50k
e
r '
C
R
L
R
L
i
i
Z
o
Z
c) = ~ = 757
i B e e
Z R r r [1]
d) = ~ =
0
3k
C o C
Z R r R [1]
757 4.7
396 134.8
757 600 4.7 3
i L L
vs v
s i s L o
Z v R
A A
v Z R R Z
| | | |
= =

+ +
\ . \ .
| | | |
= =

+ +
\ . \ .
[1]
e)


= = =
+ +
3 6
1 1
3.1Hz
2 ( ) 2 (50 10 757)10
Ls
S i s
f
R Z C
[1]
3 6
1 1
5.1Hz
2 ( ) 2 (28 10 3000)10
Lc
L o s
f
R Z C

= = =
+ +
[1]
1
2
Le
e E
f
R C
=
600 470000
910 7.57 910 13.57 13.4
100
S B
e E e
R R
R R r

| |
| |
= + = + = =

\ .
\ .


[1]
6
1
1746Hz
2 (13.4)(6.8 10 )
Le
f

= =

[1]
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Dept. of ECE, UNAM
f) The overall cut off frequency is the highest lower cut off frequency i.e
1746Hz
L
f = [0.5]
g) = + + = + + = (1 ) 7 20 (1 396)6 2.409nF
i Wi be v bc
C C C A C [0.5]
0.6 470 0.757 334
Thi S B i
R R R Z = = = [0.5]
9
1 1
198kHz
2 2 (334)(2.409 10 )
Hi
Thi i
f
R C

= = =

[1]
3 4.7 1.83k
Tho C L
R R R = = = [0.5]
(1 1/ ) 11 10 (1 1/396)6 27.01pF
o Wo ce v bc
C C C A C = + + = + + + = [0.5]
12
1 1
3.22MHz
2 2 (1830)(27.01 10 )
Ho
Tho o
f
R C

= = =

[1]
h)



= = =
+ +
12
1 1
8.08MHz
2 ( ) 2 (100(7.57)(20 6) 10
e be bc
f
r C C
[1]

= = = 100 8.08MHz 808MHz

T
f f [0.5]
i) Bode plot: [2]
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Dept. of ECE, UNAM
1
10Hz 100Hz 1kHz 10kHz 100kHz 1MHz 100MHz 1GHz
0
5
10
15
20
25
(mid)
dB
v
v
A
A
f
3
BW
j) = = 198 1.75 196.25kHz BW [1]