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Silicon N_Channel MOSFET Tetrode Short-channel transistor with high S / C quality factor For low-noise, gain-controlled input stage up to 1 GHz Pb-free (RoHS compliant) package 1) Qualified according AEC Q101
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation TS 76 C, BF998, BF998R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point2), BF998, BF998R
1Pb-containing 2For
Unit V mA
Value 370
Unit K/W
package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-20
BF998...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Drain-source breakdown voltage ID = 10 A, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 A Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 A -VG2S(p) 0.8 2 -VG1S(p) 0.8 2.5 IDSS 5 9 15 IG2SS 50 IG1SS 50 V (BR)G2SS 8 12 V (BR)G1SS 8 12 V(BR)DS 12 typ. max.
Unit
nA nA mA V
2007-04-20
BF998...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) gfs Cg1ss 20 24 2.1 2.5 pF Forward transconductance VDS = 8 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Gate 2 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Feedback capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Output capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 10 MHz Power gain VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz G p 40 1.8 50 2.8 F 20 dB 28 Gp dB Cdss 1.1 pF Cdg1 25 fF Cg2ss 1.2 pF typ. max.
Unit
2007-04-20
BF998...
Total power dissipation Ptot = (TS) BF998, BF998R Output characteristics ID = (V DS) VG2S = 4 V VG1S = Parameter
220
mW
26 mA 22
0.4V
180 20 160 18
0.2V
P tot
ID
16
0V
14 12 10 8 6
-0.4V -0.2V
4 2 0 0 2 4 6 8 10
V
14
TS
VDS
22 20 18 16 14 12 10 8 6 4 2 0 0
0V 1V 2V
22 20 18
2V
Gfs
gfs
16 14 12 10 8 6 4 2
0V 1V
12
16
mA
24
0 -1
-0.75
-0.5
-0.25
0.25
0.75
ID
VG1S
2007-04-20
BF998...
Drain current ID = (VG1S) VDS = 5V VG2S = Parameter
30
4V 2V mA dB
30
ID
1V
15
G ps
20
20
15
10
0V
10
0 -1
0.25
0.5
0 0
VG1S
VG2S
10
dB
8 7 6 5 4 3 2 1 0 0
dB
F
V
0 0
VG2S
VG2S
2007-04-20
BF998...
Power gain Gps = (VG2S) f = 800 MHz Gate 1 input capacitance Cg1ss = (VG1S)
20
2.6
pF
dB
2.2
G ps
10
Cg1ss
V
1.8
-10 0
1 -3
-2.6
-2.2
-1.8
-1.4
-1
-0.6
0.2
VG2S
VG1S
4
pF
Cdss
2.5
1.5
0.5
0 0
12
VDS
2007-04-20
Package SOT143
BF998...
Package Outline
0.15 MIN.
2.4 0.15
10 MAX.
10 MAX.
0.08...0.1
0...8 0.2 M A
Foot Print
0.8 1.2 0.8
0.9
1.2 0.8
0.8
RF s
Pin 1
56
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
0.9
1.1
0.2
Pin 1
3.15
2.6 8
1.15
2007-04-20
Package SOT143R
BF998...
Package Outline
B
0.15 MIN.
1 0.1
0.1 MAX.
2.4 0.15
2 0.2
+0.1 0.8 -0.05
10 MAX.
0.08...0.15
0... 8
0.2
M
Foot Print
0.8 1.2 0.8
0.8
0.8
1.2
0.9
1.1
0.9
Pin 1
Manufacturer
BFP181R Type code
Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel
4 0.2
Pin 1
3.15
2.6
1.15
2007-04-20
BF998...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Mnchen, Germany Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
2007-04-20