BFP193

NPN Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available
4 1

3 2

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type BFP193

Marking Pin Configuration RCs 1=C 2=E 3=B 4=E -

Package SOT143

Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Symbol RthJS Value Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 72C

12 20 20 2 80 10 580 150 -55 ... 150

Value

mA mW C

Junction temperature Storage temperature

Thermal Resistance Parameter

Unit

Junction - soldering point2)

1T 2For

135

K/W

S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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BFP193

Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V, pulse measured hFE 70 100 140 IEBO 1 ICBO 100 ICES 100 V(BR)CEO 12 typ. max.

Unit

V A nA A -

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BFP193
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz IC = 30 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz
1G

Unit max. 0.9 GHz pF

typ. 8 0.59

fT Ccb

6 -

Cce

0.28

Ceb

2.25

NFmin Gma |S21e|2 14.5 8.5 18 12 1 1.6 -

dB

dB

1/2 ma = |S21 / S12| (k-(k-1) )

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BFP193
Total power dissipation P tot = (TS)

600
mW

500 450

Ptot

400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 C 150

TS

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Package SOT143

BFP193

Package Outline
0.15 MIN.

2.9 0.1 1.9

4 3

1 0.1 0.1 MAX.

1.3 0.1

2.4 0.15

10 MAX.

10 MAX.

0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B

0.08...0.1

0...8 0.2 M A

Foot Print
0.8 1.2 0.8
0.9

1.2 0.8

0.8

Marking Layout (Example)

Manufacturer

RF s
Pin 1

56

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel Reel 330 mm = 10.000 Pieces/Reel

0.9

1.1

2005, June Date code (YM)

BFP181 Type code

0.2

Pin 1

3.15

2.6 8

1.15

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BFP193
Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.

Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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