BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997

Designed for Complementary Use with BDX54, BDX54A, BDX54B and BDX54C 60 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A
B C E

q q q

TO-220 PACKAGE (TOP VIEW)

1 2 3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING BDX53 Collector-base voltage (IE = 0) BDX53A BDX53B BDX53C BDX53 Collector-emitter voltage (IB = 0) BDX53A BDX53B BDX53C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDX53 V (BR)CEO IC = 100 mA IB = 0 (see Note 3) BDX53A BDX53B BDX53C VCE = 30 V ICEO Collector-emitter cut-off current V CE = 30 V V CE = 40 V V CE = 50 V VCB = 45 V ICBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Base-emitter saturation voltage Collector-emitter saturation voltage Parallel diode forward voltage V CB = 60 V V CB = 80 V V CB = 100 V IEBO hFE V BE(sat) VCE(sat) VEC VEB = VCE = IB = IB = IE = 5V 3V 12 mA 12 mA 3A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 3 A IC = 3 A IC = 3 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.5 2 2.5 V V V BDX53 BDX53A BDX53B BDX53C BDX53 BDX53A BDX53B BDX53C MIN 45 60 80 100 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 mA mA mA V TYP MAX UNIT

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 62.5 UNIT C/W C/W

resistive-load-switching characteristics at 25C case temperature

PARAMETER ton toff

TEST CONDITIONS IC = 3 A V BE(off) = -4.5 V IB(on) = 12 mA RL = 10

MIN IB(off) = -12 mA tp = 20 s, dc 2%

TYP 1 5

MAX

UNIT s s

Turn-on time Turn-off time

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT

INFORMATION

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 40000
TCS120AG

COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

30 tp = 300 s, duty cycle < 2% IB = IC / 100 25
TCS120AH

hFE - Typical DC Current Gain

TC = -40C TC = 25C TC = 100C 10000

20

15

1000

10

05

VCE = 3 V tp = 300 s, duty cycle < 2% 100 05 10 IC - Collector Current - A 10

TC = -40C TC = 25C TC = 100C 10 IC - Collector Current - A 10

0 05

Figure 1.

Figure 2.

BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

30 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C

TCS120AI

25

20

15

10 IB = IC / 100 tp = 300 s, duty cycle < 2% 05 05 10 IC - Collector Current - A 10

Figure 3.

PRODUCT

INFORMATION

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA

100

SAS120AD

DC Operation tp = 300 s, d = 0.1 = 10% IC - Collector Current - A

10

10

BDX53 BDX53A BDX53B BDX53C 01 10 10 100 1000

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C

TIS120AB

Figure 5.

PRODUCT

INFORMATION

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

MECHANICAL DATA TO-220 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20

3,96 3,71

10,4 10,0

2,95 2,54 6,6 6,0 15,90 14,55

1,32 1,23

see Note B

see Note C

6,1 3,5

0,97 0,61 1 2 3

1,70 1,07

14,1 12,7

2,74 2,34 5,28 4,88 2,90 2,40

0,64 0,41

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE

PRODUCT

INFORMATION

BDX53, BDX53A, BDX53B, BDX53C NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

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INFORMATION

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