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12A TRIACS
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 12 600 and 800 10 to 50 Unit A V mA
A1 A2 G
G
A2
A1
A2
DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) Parameter RMS on-state current (full sine wave)
D2PAK (T12-G)
A2
A1 A2 G
A1 A2 G
TO-220AB (BTB12)
Value Tc = 105C 12 Tc = 90C t = 20 ms t = 16.7 ms 120 126 78 Tj = 125C Tj = 25C Tj = 125C Tj = 125C 50 VDRM/VRRM
+ 100
Unit A A
ITSM
Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns
F = 50 Hz F = 60 Hz
I t dI/dt
tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s
A s A/s V A W C 1/7
VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
4 1 - 40 to + 150 - 40 to + 125
STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB12 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 k Tj = 125C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 5.3 A/ms RL = 30 I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/s V/s B 50 100 mA V V mA mA Unit
STATIC CHARACTERISTICS
Symbol VT (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
Test Conditions ITM = 17 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.
Unit V V m A mA
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Unit C/W
C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 600 V BTA/BTB12-xxxB BTA/BTB12-xxxBW BTA/BTB12-xxxC BTA/BTB12-xxxCW BTA/BTB12-xxxSW T1235-xxxG
BTB: non insulated TO-220AB package
Sensitivity 800 V X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 35 mA X X X X X X
ORDERING INFORMATION
600
BW
(RG)
PACKING MODE Blank: Bulk RG: Tube
SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL
T 12 35
TRIAC SERIES CURRENT: 12A
600 G
PACKAGE: G: D2PAK
(-TR)
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Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W) 16 14 12 10 8 6 4 2 0 0 1 2 3 4
IT(RMS)(A)
Fig. 2-1: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
BTB/T12
BTA
Tc(C)
10 11 12
25
50
75
100
125
Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35m),full cycle.
IT(RMS) (A) 3.5 3.0 2.5 2.0
D2PAK (S=1cm2)
K=[Zth/Rth] 1E+0
Zth(j-c)
1E-1
Zth(j-a)
tp(s)
1E+0 1E+1 1E+2 5E+2
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Fig. 4: values).
ITM (A) 100
t=20ms
Tj max
One cycle
10
Tj=25C Tj max. Vto = 0.85 V Rd = 35 m
Repetitive Tc=90C
VTM(V)
Number of cycles
1 0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
100
1000
Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM (A), It (As) 1000
dI/dt limitation: 50A/s Tj initial=25C
Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT
ITSM
1.5
100
It
IH & IL
1.0 0.5
Tj(C)
0.0 -40
-20
20
40
60
80
100
120
140
Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.8 2.4 2.0
C SW
Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3
B BW/CW/T1235
2
(dV/dt)c (V/s)
1
100.0
0.0 0.1
1.0
10.0
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Fig. 10: DPAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 m).
Rth(j-a) (C/W) 80
DPAK
70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm) 20 24 28 32 36 40
REF.
A A1 A2 B B2 C C2 D E G L L2 L3 R V2
4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0
1.40
0.40
0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8 0 8
10.30 1.30
5.08
3.70 8.90
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REF.
b2
L F I A
l4
a1
c2
l3
l2 a2
b1 e
M c1
A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M
15.20
15.90 0.598
3.75 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102
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