ON Semiconductor )

Plastic Medium Power PNP Silicon Transistor

. . . designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring PNP capability.

MJE350
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

High CollectorEmitter Sustaining Voltage

VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain hFE = 30240 @ IC = 50 mAdc Plastic Thermopad Package

MAXIMUM RATINGS
3 2 1
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE

Rating

Symbol VCEO VEB IC

Value 300 3.0

Unit Vdc Vdc

CollectorEmitter Voltage EmitterBase Voltage

CASE 7709 TO225AA TYPE

Collector Current Continuous

500

mAdc Watts W/_C _C

Total Power Dissipation @ TC = 25_C Derate above 25_C

PD

20 0.16

Operating and Storage Junction Temperature Range

TJ, Tstg

65 to +150

THERMAL CHARACTERISTICS
Characteristic

Symbol JC

Max

Unit

Thermal Resistance, Junction to Case

6.25

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic OFF CHARACTERISTICS

Symbol

Min

Max

Unit

CollectorEmitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)

VCEO(sus) ICBO IEBO

300

Vdc

100 100

Adc Adc

ON CHARACTERISTICS

DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)

hFE

30

240

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 12

Publication Order Number: MJE350/D

MJE350
200 TJ = 150C 25C -55C 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 VCE(sat) 300 500 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V IC/IB = 10

hFE , DC CURRENT GAIN

100 70 50 30 20

VCE = 2.0 V VCC = 10 V 200 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)

10 5.0 7.0 10

Figure 1. DC Current Gain

Figure 2. On Voltages

V, TEMPERATURE COEFFICIENTS (mV/C)

IC, COLLECTOR CURRENT (mA)

1000 700 500 300 200 100 70 50 30 20 10 20 1.0ms dc

+1.2 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 5.0 7.0 10 VB for VBE -55C to +25C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 *VC for VCE(sat) *APPLIES FOR IC/IB < hFE/4 +100C to +150C +25C to +100C

100s

-55C to +25C +25C to +150C

500s TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 50 100 200 30 70 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. ActiveRegion Safe Operating Area

Figure 4. Temperature Coefficients

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

20 PD, POWER DISSIPATION (WATTS) 16 12

8.0 4.0 0

20

40 60 80 100 120 TC, CASE TEMPERATURE (C)

140

160

Figure 5. Power Derating

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MJE350
PACKAGE DIMENSIONS

TO225 CASE 7709 ISSUE W

B U Q A
1 2 3

F M

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---

V G S D 2 PL 0.25 (0.010)
M

J R 0.25 (0.010) A
M

A
M

STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE

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MJE350

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PUBLICATION ORDERING INFORMATION

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MJE350/D