SEU3003 DiodePN

SEU 3003
ELEKTROIK
(ELECTROICS)
Chapter 2
DIODE P
Dr. orlaili Mat Safri

Dr. N.M. Safri/SEU3003_diode PN 1
In this chapter, we will learn:
1. Diode’s physical structure
2. The I-V characteristics
3. Load line and graphical analysis
4. Internal resistance
5. Diode model
6. Diode with DC power supply –
series and parallel connection
7. Basic gates
8. Diodes applications: AC power supply –
rectifiers with capacitor filter,
clippers and clampers
9. Data sheets
10.Zener diode – simple voltage regulator
11.Other diodes - Photodiodes, LED’s and etc
Diode’s Physical Structure
A diode is a single pn junction device with conductive

contacts and wire leads connected to each region.
pn junction
Metal contacts
and wire leads
p n
Fig.1: Basic diode structure

There are several types of diodes, but the schematic symbol

for a general-purpose diode (rectifier diode) is as shown
below.
Anode (A) Cathode (K)
Fig.2: Schematic symbol
The n region is called the cathode and p region is called the

anode.
anode
The “arrow” in the symbol points in the direction of
conventional current (opposite to electron flow).

(Forward-bias connection)
A diode is forward-biased when a voltage source is connected
as shown in figure 3.
VF The positive terminal of the source is
+ －
connected to the anode through the
－ IF current-limiting resistor.
R
Vbias The negative terminal of the source is
+ + －
connected to the cathode.
Fig.3: Forward bias The forward current (IF) is from
anode to cathode as indicated.
The forward voltage drop (VF) due to the barrier potential is
from positive at the anode to negative at the cathode.
(Reverse-bias connection)
A diode is reverse-biased when a voltage source is connected
as shown in figure 4.
Vbias The negative terminal of the source is
－ +
connected to the anode side of the
I =0A
diode and the positive terminal is
R
Vbias connected to the cathode side.
－ +
The reverse current is extremely
Fig.4: Reverse bias small and can be considered to be
zero.
Notice that the entire bias voltage (Vbias) appears across the
diode.
The I-V Characteristics
(The ideal diode model)
The ideal model of a diode is a simple switch.
When the diode is forward-biased, it acts like a closed (on)
switch (Fig. 5 (a)).
When the diode is reverse-biased, it acts like an open (off)
switch (Fig. 5 (b)).
The barrier potential, the forward dynamic resistance, and the
reverse current are all neglected.
Ideal diode model Ideal diode model
A K A K
－ IF I =0A
Rlimit Rlimit
Vbias Vbias
+ + －－ +
Fig.5(a): Forward bias Dr. N.M. Safri/SEU3003_diode PN Fig.5(b): Reverse bias 7

Activity
Draw the ideal I-V characteristic curve to depicts the

ideal diode operation. At x-axis, indicate VF and VR
as positive and negative potential, respectively, and
at y-axis, the IF and IR as positive and negative
current, respectively.

(The ideal diode model)
IF
VR VF
IR
Fig.6: Ideal characteristic curve (blue)
Activity
Complete these equations.
VF = 0 V
Vbias
IF = R
limit
IR = 0 A
VR = Vbias

(The practical diode model)
Practical diode model The practical model adds the barrier

VF potential to the ideal switch model.
A + － K
－
IF When the diode is forward-biased, it is
Rlimit
Vbias
equivalent to a closed switch in series
+ + － with a small equivalent voltage source
equal to the barrier potential (0.7 V)
Fig.7(a): Forward bias with the positive side toward the
anode.
This equivalent voltage source represents the fixed voltage
drop (VF) produced across the forward-biased pn junction
of the diode and is not an active source of voltage.
Practical diode model When the diode is reverse-biased, it is

A K
equivalent to an open switch just as in
－V + the ideal model.
bias
I =0A
Rlimit The barrier potential does not affect
Vbias reverse bias, so it is not a factor.
－ +
Fig.7(b): Reverse bias

IF
VR VF
0 0.7 V
IR
Fig.8: Characteristic curve of silicon diode (blue)
Activity
Using Kirchhoff’s voltage law, determine:
VF = 0.7 V
Vbias – VF
IF = Rlimit
IR = 0 A
VR = Vbias

(The complete diode model)
Complete diode model The complete model of a diode

0.7 V r’
A + － d K
consists of the barrier potential, the
－ small forward dynamic resistance (r’d),
IF
Rlimit and the large internal reverse
Vbias resistance (r’R).
+ + －
The reverse resistance is taken into
Fig.9(a): Forward bias account because it provides a path for
the reverse current, which is included
in this diode model.
When the diode is forward-biased, it acts as a closed switch
in series with the barrier potential voltage and the small
forward dynamic resistance (r’d).
(The complete diode model-forward-biased)
IR IF = Imajority - IR
}
Imajority
- - -- +
+ -+ - - - －
+ - -+
-
- p -+ - + - +
-+ n -
-+
-- -+ - +- Metal contacts
-+
}
depletion region and wire leads

(Shockley’s equation)
Using solid-state physics, general characteristics of a
semiconductor diode can be defined as follows.
VF
 nV  T
I F = I R  e − 1
 
where IR is the reverse saturation current
VF is the applied forward-bias voltage across the diode
n is an ideality factor, which is a function of the operating
conditions and physical construction; it has a range of 1
and 2 depending a wide variety of factors
(Thermal voltage (VT))
VT is called the thermal voltage and is determined by
kT
VT =
q
where k is Boltzmann’s constant = 1.38 Χ 10-23 J/K

T is the absolute temperature in kelvins
= 273 + the temperature in °C
q is the magnitude of electronic charge = 1.6 X 10-19 C

(The complete diode model-forward biased)
IF (mA)
Slope due to the flow

forward resistance
VR VF
0 0.7 V (knee voltage)
*Note the difference

between the IF and IR scales.
IR (µA)
Complete diode model
r’R When the diode is reverse-biased, it
A K
acts as an open switch in parallel with
+
the large internal reverse resistance
IR
Rlimit (r’R).
Vbias
－－ + The barrier potential does not affect
reverse bias, so it is not a factor.
Fig.9(b): Reverse bias

IF (mA)
VR VF
0 0.7 V (knee voltage)
Small reverse
current due to
the high
reverse *Note the difference
resistance
IR (µA)
Activity
Using Kirchhoff’s voltage law, determine:
VF = 0.7 V + IFr’d
Vbias – 0.7 V
IF = Rlimit + r’d

(Temperature effects)
For a forward-biased diode, as temperature is increased,

the forward current increases for a given value of forward
voltage.
Also, for a given value of forward current, the forward
voltage decreases.
For a reverse-biased diode, as temperature is increased, the
reverse current increases.

(Temperature effects)
IF (mA)
at 25°°C + ∆T at 25°°C
VR 0
0.7 V
VF
0.7 V - ∆V
*Note the difference

IR (µA)
Fig.11: Temperature effect on the diode V-I characteristic.
Activity
Determine the forward voltage and forward current for

each of the diode model. Also find the voltage across the
limiting resistor in each case. Assume r’d = 10 Ω at the
determined value of forward current. Fig. (a)
Determine the reverse voltage and reverse current for
each diode model. Also find the voltage across the limiting
resistor in each case. Assume IR = 1 µA. Fig. (b)
Rlimit Rlimit
1.0 kΩ 1.0 kΩ
+ +
Vbias 10 V Vbias 5V
－－
(a) (b)
Outline
Activity (Answer)
Rlimit Ideal model
1.0 kΩ
+ VF = 0 V
Vbias 10 V
－ IF = Vbias / Rlimit = 10 V / 1.0 kΩ = 10 mA
VRlimit = IF Rlimit = (10 mA) (1.0 kΩ) = 10 V
(a)
Practical model Complete model

VF = 0.7 V VF = 0.7 V + IFr’d
IF = (Vbias – VF) / Rlimit IF = (Vbias – VF) / (Rlimit + r’d)
= (10 V – 0.7 V) / 1.0 kΩ = 9.3 mA = (10 V – 0.7 V) / (1.0 kΩ + 10 Ω )
= 9.21 mA
VRlimit = IF Rlimit
= (9.3 mA) (1.0 kΩ) = 9.3 V VRlimit = IF Rlimit
= (9.21 mA) (1.0 kΩ) = 9.21 V
Outline
Activity (Answer)
Rlimit Ideal model
1.0 kΩ
+ VR = Vbias = 5 V
Vbias 5V
－ IR = 0 A
VRlimit = 0 V
(b)
Practical model Complete model

VR = Vbias = 5 V VF = Vbias – VRlimit
IR = 0A IR = 1 µ A
VRlimit = 0V VRlimit = IF Rlimit
= (1 µ A) (1.0 kΩ) = 1 mV

Outline
In Summary
Anode (A) Cathode (K)
Ideal model Practical model Complete model

VD VD r’d
A K A K A + － K Forward-
+ －
biased
r’R
A K A K Reverse-
－ + A K
I =0A I =0A biased
ID ID ID (mA)
0 VD 0 0 VD
0.7 V VD (knee voltage)
(Si) ID (µA)
0.3 V
(Ge)
Outline
Load Line and Graphical Analysis
The circuit of Fig. 12 is the simplest of diode configuration.
It will be used to describe the analysis of a diode circuit using
its actual characteristics.
ID (mA)
VD
+ －
－ ID
R
E
+ + －
0 VD (V)
(a) (b)
Fig.12: Series diode configuration: (a) circuit; (b) characteristics

Outline
The straight line is called a load line because the intersection
on the vertical axis is defined by the applied load R.
The analysis to follow is therefore called load-line analysis.
analysis
ID (mA)
VD
+ －
－ IDQ = ? Q-point
ID
R
E Load line
+ + －
0 VDQ = ? VD (V)
(a) (b)
Fig.12: Series diode configuration: (a) circuit; (b) characteristics

Outline
Example 1 (Complete model)
VD ID (mA)
+ －
－ 20 mA Q-point
ID
R = 0.5 kΩ
+ + －
Load line
E = 10 V Diode characteristics
Applying Kirchoff’s voltage law 0 10 V V (V)

D
around the close loop, we have
E – VR – VD = 0 For horizontal-axis, if ID = 0 A, then
⇒ VD = E - VR VD = E = 10 V
⇒ VD = E - IDR For vertical-axis, if VD = 0 V, then
ID = E/R = 10 V / 0.5 kΩ = 20 mA
Outline
Example 1 (Complete model)
VD ID (mA)
+ －
－ 20 mA Q-point
ID IDQ ≅ 18.3 mA
R = 0.5 kΩ
+ + －
Load line
E = 10 V
Applying Kirchoff’s voltage law 0 V ≅ 0.8 V 10 V V (V)
DQ D
⇒ VD = E - VR VD = E = 10 V
ID = E/R = 10 V / 0.5 kΩ = 20 mA
Outline
Example 1 (Practical model)
VD ID (mA)
+ －
－ 20 mA Q-point
ID IDQ ≅ 18.6 mA
R = 0.5 kΩ
+ + －
Load line
E = 10 V
Applying Kirchoff’s voltage law 0 V = 0.7 V 10 V V (V)
DQ D
⇒ VD = E - VR VD = E = 10 V
ID = E/R = 10 V / 0.5 kΩ = 20 mA
Outline
Example 1 (Ideal model)
VD ID (mA)
+ －
IDQ = 20 mA Q-point
－ ID
R = 0.5 kΩ
+ + －
Load line
E = 10 V
Applying Kirchoff’s voltage law 0 10 V V (V)
D
VDQ = 0 V
⇒ VD = E - VR VD = E = 10 V
ID = E/R = 10 V / 0.5 kΩ = 20 mA
Outline
Activity
VD ID (mA)
+ －
－ ID
R = 1 kΩ
+ + －
E = 10 V Diode characteristics
0 VD (V)
Draw the load line, identify the Q-point
and determine VDQ and IDQ.

Outline
Activity (Answer)
VD ID (mA)
+ －
－ ID
R = 1 kΩ
+ 10 mA Q-point
+ － IDQ ≅ 9.3 mA Load line
E = 10 V
Applying Kirchoff’s voltage law 0 V = 0.7 V 10 V V (V)
DQ D
⇒ VD = E - VR VD = E = 10 V
ID = E/R = 10 V / 1 kΩ = 10 mA
Outline
Compare Eg. 1 and Eg. 2 (Practical model)
VD ID (mA)
+ －
－ 20 mA Q-point
ID IDQ ≅ 18.6 mA
R = 0.5 kΩ
+ + － Load line
E = 10 V
0 V = 0.7 V 10 V VD (V)
DQ
VD ID (mA)
+ －
－ ID
R = 1 kΩ
+ 10 mA Q-point
+ － IDQ ≅ 9.3 mA Load line
E = 10 V
0 V = 0.7 V 10 V VD (V)
DQ

Outline
Internal resistance
Determine the dc resistance levels for the diode of Eg. 1 and
Eg. 2 (complete model).
VD ID (mA)
+ －
20 mA Q-point
－ ID
At ID = 18.3 mA, VD = 0.8 V
IDQ ≅ 18.3 mA
R = 0.5 kΩ (from the curve),
+ + －
Load line RD = VD / ID ≅ 44 Ω
E = 10 V
0 V ≅ 0.8 V 10 V V (V)
DQ D
VD
+ － ID (mA)
－ ID At ID = 9 mA, VD = 0.75 V
R = 1 kΩ
10 mA
(from the curve),
+ Q-point
+ － IDQ ≅ 9 mA
Load line
E = 10 V RD = VD / ID ≅ 83 Ω
0 V ≅ 0.75 V 10 V V (V)
DQ D
In general,
The higher the current through a diode, the lower is the dc resistance level.
Outline
Internal resistance
As the operating point (Q-point) of a diode moves from one
region to another, the resistance of the diode will also change
due to nonlinear shape of the diode characteristic curve.
DC or Static Resistance
The application of a dc voltage to a circuit containing a
semiconductor diode will result in an operating point on the
characteristic curve that will not change with time.
Resistance of a diode, RD = VD / ID
AC or Dynamic Resistance
If a sinusoidal rather than a dc input is applied, the varying
input will move the instantaneous operating point up and
down a region of the characteristics and thus defines a
specific change in current and voltage.
Outline
Internal resistance
∆Id Q-point
(dc operation)
∆Vd
*Note: Q stand for quiescent, which means “still or

unvarying” Dr. N.M. Safri/SEU3003_diode PN 40
Outline
Internal resistance
Q-point ∆Id
∆Vd
∆Id Q-point
(dc operation)
Resistance of a diode
rd = ∆Vd / ∆Id
∆Vd
In general,
the lower the Q-point of operation (smaller current or lower voltage), the higher is the
ac resistance. Dr. N.M. Safri/SEU3003_diode PN 41
Outline
Diode with DC Power Supply
Series Connection
Determine ID, VD2 and VO for the series circuit of Fig. 13.
+VD2 －
Si Si
+20 V V
IR O
ID 5.6 kΩ
Fig.13

Outline
Parallel Connection
Determine VO, I1, ID1 and ID2 for the parallel diode configuration
of Fig. 14.
I1 0.33 kΩ
+
R ID1 ID2
+
E 10 V D1 Si D2 Si VO
－
Fig.14

Outline
Series-Parallel Configuration
Determine I1, I2, and ID2 for the network of Fig. 15.
Si 3.3 kΩ
D1 R1 I1
+
E 20 V D2 Si
－
ID2
I2 5.6 kΩ
R2
Fig.15

Outline
Basic Gates
Determine VO for the logic gate circuit of Fig. 16. Which diode is
in “ON” state? Determine the current that flows through this
diode. If the diode is made of silicon, what is the new value of
VO?
D1
-5 V
0V VO
D2
1 kΩ
Fig.16

Outline
Activity
Determine VO for the logic gate circuit of Fig. 17. Which diode is
in “ON” state? Determine the current that flows through this
diode. If the diode is made of germanium, what is the new value
of VO?
D1
-5 V
0V VO
D2
2.2 kΩ
Fig.17 -5 V

Outline
Activity
Complete the table, according to logic gate circuit of Fig. 18.
What is the type of this logic gate circuit?
+5 V
V1 V2 VO
1 kΩ
D1 0V 0V 0V
V1
0V 5V 0V
V2 5V 0V 0V
D2 VO
5V 5V 5V
Fig.18
AD logic gate
Outline
Diode with AC Power Supply
The diode analysis will now be expanded to include time-

varying functions such as the sinusoidal waveform and the
square wave. Vi Vi Vi
Vp Vp Vp
0 T/2 T t 0 T/2 T t 0 T/2 T t

1 cycle 1 cycle 1 cycle
With time-varying functions, diode can be used as:

1. Half-wave rectifier
2. Full-wave rectifier
3. Clippers
4. Clampers
Outline
RECTIFIER: Half-wave rectification
Vi
+ －
Vp + +
Vi R Vo
0 T/2 T t
－－
1 cycle
Fig.19
Vi = Vp sin ωt

Move
Outline
RECTIFIER: Half-wave rectification
Vi Vo
Diode is conducting
Vp + + Vp
Vo = Vi
I
0 T/2 T t Vi R Vo 0 T/2 T t
－－
Vi Vo
Vo = 0 V
Diode is reverse-biased
－ +
0 T/2 T t I=0A 0 T/2 T t
Vi R Vo
Vi + － Vo
Vp Vp
Vdc = 0 Vdc = 0.318 Vp Vdc
0 T/2 T t 0 T/2 T t

Move
Outline
RECTIFIER: Full-wave rectification
The full-wave rectifier inverts the negative portions of the

sine wave so that a unipolar output signal is generated during
both halves of the input sinusoid.
1. Bridge Network
2. Center-Tapped Transformer

Outline
Bridge Network
Vi
+ D1 D2
Vp
－
Vo +
Vi
0 T/2 T t R
D3
1 cycle －
D4
Vi = Vp sin ωt Fig.20

Outline
Vi Diode D2 Vo
+ D1 D2
Vp V and D3 are Vp
－ o + Vo = Vi
Vi conducting
R I
0 T/2 T t － D3 D4 0 T/2 T t
Vo
Vi Vo = Vi
Diode D1
－ D1 D2
V and D4 are
0 T/2 T t － o +
Vi conducting 0 T/2 T t
R
+ D3 D4
Vi Vo
+ I
Vp Vp
Vdc
0 T/2 T t
Vdc = 0 Vdc = 2 (0.318 Vp) 0 T/2 T t
= 0.636 Vp
Outline
Center-Tapped Transformer
Vi D1
1:2
+
Vi
Vp + Vo +
－－
Vi +
0 T/2 T t R
－ Vi
1 cycle －
D2
Vi = Vp sin ωt
Fig.21

Outline
Vi 1:2 D1 D1 is conductingV
o
+ I
Vp Vi Vo Vp Vo = Vi
+ －－ +
Vi +
0 T/2 T t － Vi R 0 T/2 T t
－
D2 Vo
Vi Vo = Vi
1:2 D1
0 T/2 T t －
－ Vi Vo 0 T/2 T t
+ － +
Vi －
+ Vi R I
Vi + Vo
Vp D2 is conducting D2 Vp
Vdc
0 T/2 T t
Vdc = 0 Vdc = 2 (0.318 Vp) 0 T/2 T t
= 0.636 Vp
Outline
RECTIFIER with FILTER CAPACITACE
If a capacitor is added in parallel with the load resistor of a
half-wave rectifier to form a simple filter circuit, we can
begin to transform the half-wave sinusoidal output into a dc
voltage.
Vi + －
+ +
Vi C R Vo
Vp
－－
0 T/2 T t
1 cycle Fig.22
Vi = Vp sin ωt

Outline
RECTIFIER with FILTER
Diode is conducting
Vi + + Vo
Vo = Vp = Vc
Vp Vi C R Vo
Vo = Vi Vo = Vc
－－
0 T/2 T t 0 T/2 T t
Vi － + Vo
+
Vo = Vc
C R Vo
Vi －
0 T/2 T t 0 T/2 T t
－
+
Vi Vo
Vp Vdc
Vdc = 0 Vdc = Vp – Vr(p-p)/2
= [1 – 1/(2fRC)] Vp 0 T t
0 T/2 T t T/2

Outline
CLIPPERS
Clippers are networks that employ diodes to “clip” away a
portion of an input signal without distorting the remaining
part of the applied waveform.
There are two general categories of clippers: series and
parallel.
The half-wave rectifier of Fig. 19 is an example of the
simplest form of diode clipper – one resistor and a diode.
Depending on the orientation of the diode, the positive and
negative region of the applied signal is “clipped” off.

Outline
Tips
There is no general procedure for analyzing networks, but there are some
things one can do to give the analysis some direction.
First and mort important:

1.Take careful note of where the output voltage is defined.
Next:
2. Try to develop an overall sense of the response by simply noting
the “pressure” established by each supply and the effect it will have
on the conventional current direction through the diode.
3. Determine the applied voltage (transition voltage) that will result

in a change of state for the diode from the “off” to the “on” state.
4. It is often helpful to draw the output waveform directly below the

applied voltage using the same scales for the horizontal axis and the
vertical axis.
Outline
Activity (1)
Determine the output waveform for the sinusoidal input of Fig.
23?
Vi
5V
－ +
Vp = 20 V + +
Vi R Vo
0 T/2 T t
－－
Fig.23

Outline
Answer
Vi 5V Diode is conducting Vo
－ +
+ + Vp + 5
Vp
Vo = Vi + 5
Vi R Vo 5
0 T/2 T t 0 T/2 T t
－－
Vi Vo
5V
Diode is not Vo = 0 V
－ + conducting at Vi ≤ - 5 V
0 T/2 T t － + 0 T/2 T t
Vi R Vo
Vi －
Vo
+
Vp + 5
Vp
0 T/2 T t 0 T/2 T t

Outline
Activity (2)
Determine the output waveform for the sinusoidal input of Fig.
24? Compare the result with the Fig. 24.
Vi
5V
+ －
Vp = 20 V + +
Vi R Vo
0 T/2 T t
－－
Fig.24

Outline
PIV
The peak inverse voltage (PIV) rating of the diode is of
primary importance in the design of rectification systems.
It is the voltage rating that must not be exceeded in the
reverse-bias region or the diode will enter the Zener
avalanche region. I F (mA)
Small reverse current due to the

high reverse resistance
VR VF
0 0.7 V
(knee
Zener
voltage)
avalanche
region
IR (µA)

Outline
PIV
PIV rating for half-wave rectifier
V(PIV) rating ≥ Vp
Vi V(PIV) Vo
－ +
－ +
0 T/2 T t I=0A 0 T/2 T t
Vi R Vo
+ －
PIV rating for full-wave rectifier

Vi 1:2 D1 Vo
+
Vp Vi Vo Vp Vo = Vi
+ －－ +
Vi +
0 T/2 T t － Vi D2 0 T/2 T t
－
－ +
V(PIV) V(PIV) rating ≥ 2Vp
Outline
CLAMPERS
A clamper is a network constructed of a diode, a resistor,

and a capacitor that shifts a waveform to a different dc level
without changing the appearance of the applied signal.
Clamping networks have a capacitor connected directly from

input to output with a resistive element in parallel with the
output signal. The diode is also in parallel with the output
signal but may not have a series dc supply as an added
element.

Outline
Tips for Clamper etworks
First and mort important:
1. .Start the analysis by examining the response of the portion of the
input signal that will forward bias the diode.
Next:
2. During the period that the diode is in the “on” state, assume that
the capacitor will charge up instantaneously to a voltage level
determined by the surrounding network.
3. Assume that during the period when the diode is in the “off” state
the capacitor holds on to its established voltage level.
4. Throughout the analysis, maintain a continual awareness of the

location and defined polarity for Vo to ensure that the proper levels
are obtained.
5. Check that the total swing of the output matches that of the input.
Outline
Activity
Determine Vo for the network of Fig. 25 for the input indicated.
Vi
C = 1µF
+ +
f = 1000 Hz
10 Vi R Vo
5 V－
+ 100 kΩ
0 t1 t2 t3 t4 t －－
- 20
T Fig.25

Outline

SEU3003 DiodePN

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SEU 3003

Dr. orlaili Mat Safri

A diode is a single pn junction device with conductive

Fig.1: Basic diode structure

Dr. N.M. Safri/SEU3003_diode PN 3

There are several types of diodes, but the schematic symbol

Fig.2: Schematic symbol

The n region is called the cathode and p region is called the

Dr. N.M. Safri/SEU3003_diode PN 4

Fig.5(a): Forward bias Dr. N.M. Safri/SEU3003_diode PN Fig.5(b): Reverse bias 7

Draw the ideal I-V characteristic curve to depicts the

Dr. N.M. Safri/SEU3003_diode PN 8

Complete these equations.

Dr. N.M. Safri/SEU3003_diode PN 10

Practical diode model The practical model adds the barrier

Practical diode model When the diode is reverse-biased, it is

Fig.7(b): Reverse bias

Dr. N.M. Safri/SEU3003_diode PN 12

Using Kirchhoff’s voltage law, determine:

Dr. N.M. Safri/SEU3003_diode PN 14

Complete diode model The complete model of a diode

Dr. N.M. Safri/SEU3003_diode PN 16

where k is Boltzmann’s constant = 1.38 Χ 10-23 J/K

Dr. N.M. Safri/SEU3003_diode PN 18

Slope due to the flow

*Note the difference

Dr. N.M. Safri/SEU3003_diode PN 20

Using Kirchhoff’s voltage law, determine:

Dr. N.M. Safri/SEU3003_diode PN 22

For a forward-biased diode, as temperature is increased,

Dr. N.M. Safri/SEU3003_diode PN 23

*Note the difference

Determine the forward voltage and forward current for

Practical model Complete model

Practical model Complete model

Dr. N.M. Safri/SEU3003_diode PN 27

Ideal model Practical model Complete model

Dr. N.M. Safri/SEU3003_diode PN 29

Dr. N.M. Safri/SEU3003_diode PN 30

Applying Kirchoff’s voltage law 0 10 V V (V)

Dr. N.M. Safri/SEU3003_diode PN 35

Dr. N.M. Safri/SEU3003_diode PN 37

*Note: Q stand for quiescent, which means “still or

Dr. N.M. Safri/SEU3003_diode PN 42

Dr. N.M. Safri/SEU3003_diode PN 43

Dr. N.M. Safri/SEU3003_diode PN 44

Dr. N.M. Safri/SEU3003_diode PN 45

Dr. N.M. Safri/SEU3003_diode PN 46

The diode analysis will now be expanded to include time-

0 T/2 T t 0 T/2 T t 0 T/2 T t

With time-varying functions, diode can be used as:

Dr. N.M. Safri/SEU3003_diode PN 49

Dr. N.M. Safri/SEU3003_diode PN 50

The full-wave rectifier inverts the negative portions of the

Dr. N.M. Safri/SEU3003_diode PN 51

Dr. N.M. Safri/SEU3003_diode PN 52

Dr. N.M. Safri/SEU3003_diode PN 54

Dr. N.M. Safri/SEU3003_diode PN 56

Dr. N.M. Safri/SEU3003_diode PN 57

Dr. N.M. Safri/SEU3003_diode PN 58

First and mort important:

3. Determine the applied voltage (transition voltage) that will result