BSS44

SILICON PNP TRANSISTOR

STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR

DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T case 25 o C T amb 25 o C Storage Temperature Max. Operating Junction Temperature Value - 65 - 60 -6 -5 5 0.87 -65 to 200 200 Unit V V V A W W
o o

C C 1/4

November 1998

BSS44
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-amb Max Max 35 200
o o

C/W C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol I CES Parameter Collector Cut-off Current (V BE =0) Test Conditions V CE = -60 V I C = -1 mA -65 Min. Typ. Max. -0.5 Unit A V

V (BR)CBO Collector-base Breakdown Voltage (I E = 0) V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO

I C = -50 mA

-60

Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain

I E =.- 1 mA I C = -0.5 A IC = - 5 A I C = -0.5 A IC = - 5 A I C = -0.5 A I C = -2 A I C = -5 A I C = -0.5 A IE = 0 f = 1 MHz I B = -50 mA I B = -0.5 A I B = -50 mA I B = -0.5 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -5 V V CB = 10 V

-6 -0.1 -0.4 -0.8 -1.1 30 40 70 45 80 100 0.065 0.45

V V V V V

V CE(sat) V BE(sat) h FE

-1 -1.6

f T C CBO t on t off

Transition Frequency Collector-base Capacitance Turn-on Time Turn-off Time

MHz pF s s

IC = -0.5 A V CC = -20 V I B1 = -IB2 = -50 mA

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

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BSS44

TO-39 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch

G I H

B
P008B

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BSS44

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