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UNIT I Power Semiconductor Devices
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Introduction
What are Power Semiconductor Devices (PSD)? They are devices used as switches or rectifiers in power electronic circuits What is the difference of PSD and low-power semiconductor device? Large voltage in the off state High current capability in the on state
Classification
Fig. 1. The power semiconductor devices family

Important Parameters
Breakdown voltage. On-resistance. Trade-off between breakdown voltage and on-resistance. Rise and fall times for switching between on and off states. Safe-operating area.
Power MOSFET: Structure

Power MOSFET has much higher current handling capability in ampere range and drain to source blocking voltage(50-100V) than other MOSFETs.
Fig.2.Repetitive pattern of the cells structure in power MOSFET
Power MOSFET: R-V Characteristics

An important parameter of a power MOSFET is on resistance:
Ron = RS + RCH + RD , where RCH =
L W nCox (VGS VT )
Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

Thyristor: Structure
Thyristor is a general class of a four-layer pnpn semiconducting device.
Fig.4 (a) The basic four-layer pnpn structure. (b) Two two-transistor equivalent circuit.
Thyristor: I-V Characteristics

Three States: Reverse Blocking Forward Blocking Forward Conducting
Fig.5 The current-voltage characteristics of the pnpn device.
Applications
Power semiconductor devices have widespread applications: Automotive Alternator, Regulator, Ignition, stereo tape Entertainment Power supplies, stereo, radio and television Appliance Drill motors, Blenders, Mixers, Air conditioners and Heaters
Thyristors
Most important type of power semiconductor device. Have the highest power handling capability.they have a rating of 1200V / 1500A with switching frequencies ranging from 1KHz to 20KHz.
Is inherently a slow switching device compared to BJT or MOSFET. Used as a latching switch that can be turned on by the control terminal but cannot be turned off by the gate.
Different types of Thyristors

Silicon Controlled Rectifier (SCR). TRIAC. DIAC. Gate Turn-Off Thyristor (GTO).
SCR
Symbol of Silicon Controlled Rectifier
Structure
Gate Cathode
n J3 J2
10
19
cm
-3 17 -3
n 10 cm
10
19
cm
-3
n J1
10 10
13
-5 x 10 cm
-3 -3
14
cm
-3
}
}
} }
10m 30-100m 50-1000m 30-50m
p p
+
17 19
10
cm
Anode
Device Operation
Simplified model of a thyristor
V-I Characteristics
Effects of gate current
Two Transistor Model of SCR
Considering PNP transistor of the equivalent circuit, I E 1 = I A , I C = I C1 , = 1 , I CBO = I CBO1 , I B = I B1 I B1 = I A (1 1 ) I CBO1 (1)
Considering NPN transistor of the equivalent circuit, I C = I C2 , I B = I B2 , I E2 = I K = I A + I G I C2 = 2 I k + I CBO2 I C2 = 2 ( I A + I G ) + I CBO2 ( 2 )

From the equivalent circuit, we see that I C2 = I B1
2 I g + I CBO1 + I CBO 2 IA = 1 (1 + 2 )
Case 1: When I g = 0 IA = I CBO1 + I CBO2 1 (1 + 2 )
Case 2: When I G 0
2 I g + I CBO1 + I CBO 2 IA = 1 (1 + 2 )
Turn-on Characteristics
ton = td + tr
VAK tC tq t
IA Anode current begins to decrease Commutation Recovery di dt Recombination
t1 t2
t3
t4
t5
tq=device tc =circuit
off time off time

trr tq tc
tgr
Turn-off Characteristi c
t
Methods of Thyristor Turn-on

Thermal Turn-on. Light. High Voltage. Gate Current. dv/dt.
Thyristor Types
Phase-control Thyristors (SCRs). Fast-switching Thyristors (SCRs). Gate-turn-off Thyristors (GTOs). Bidirectional triode Thyristors (TRIACs). Reverse-conducting Thyristors (RCTs).
Static induction Thyristors (SITHs). Light-activated silicon-controlled rectifiers (LASCRs). FET controlled Thyristors (FET-CTHs). MOS controlled Thyristors (MCTs).
These are converter thyristors. The turn-off time tq is in the order of 50 to 100sec. Used for low switching frequency. Commutation is natural commutation On state voltage drop is 1.15V for a 600V device.
Phase Control Thyristor
They use amplifying gate thyristor.
Fast Switching Thyristors

Also called inverter thyristors. Used for high speed switching applications. Turn-off time tq in the range of 5 to 50sec. On-state voltage drop of typically 1.7V for 2200A, 1800V thyristor. High dv/dt and high di/dt rating.
Bidirectional Triode Thyristors (TRIAC)
Mode-I Operation MT (+)

2
P1 N1 Ig P2 N2 MT1 ()
G (+) Ig
MT2 Positive, Gate Positive
Mode-II Operation MT (+)

2
P1 Initial conduction N3 G N1 P2 N2 MT1 () Final conduction
MT2 Positive, Gate Negative
V
Ig
Mode-III Operation
MT2 () N4 P1 N1 P2 G (+) Ig
N2 MT1 (+)
MT2 Negative, Gate Positive
Mode-IV Operation
MT2 () N4 P1 N1 N3 G (-) Ig
P2 MT1 (+)
MT2 Negative, Gate Negative
Triac Characteristics
BJT structure
heavily doped ~ 10^15 provides the carriers lightly doped ~ 10^8 lightly doped ~ 10^6
note: this is a current of electrons (npn case) and so the conventional current flows from collector to emitter.
BJT characteristics
BJT characteristics
BJT modes of operation
Mode Cutoff Forward active Reverse active Saturation
EBJ Reverse Forward Reverse Forward

CBJ Reverse Reverse Forward Forward
BJT modes of operation

Cutoff: In cutoff, both junctions reverse biased. There is very little current flow, which corresponds to a logical "off", or an open switch. Forward-active (or simply, active): The emitter-base junction is forward biased and the base-collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, f in forward-active mode. If this is the case, the collector-emitter current is approximately proportional to the base current, but many times larger, for small base current variations. Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Since most BJTs are designed to maximise current gain in forward-active mode, the f in inverted mode is several times smaller. This transistor mode is seldom used. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region. Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch.
BJT structure (active)
current of electrons for npn transistor conventional current flows from collector to emitter.
IE E VBE
VCE +
IC C + VCB -
IB + B
MOSFET
NMOS: N-channel Metal Oxide Semiconductor W L = channel length W = channel width L
Metal (heavily doped poly-Si)
GATE
DRAIN
SOURCE A GATE electrode is placed above (electrically insulated from) the silicon surface, and is used to control the resistance between the SOURCE and DRAIN regions
N-channel MOSFET
Gate Source
IG
gate oxide insulator
Drain
IS
n
ID
n
Without a gate-to-source voltage applied, no current can flow between the source and drain regions. Above a certain gate-to-source voltage (threshold voltage VT), a conducting layer of mobile electrons is formed at the Si surface beneath the oxide. These electrons can carry current between the source and drain.
N-channel vs. P-channel MOSFETs

NMOS n+ poly-Si n+ p-type Si n+ p+ n-type Si PMOS p+ poly-Si p+
For current to flow, VGS > VT Enhancement mode: VT > 0 Depletion mode: VT < 0
Transistor is ON when VG=0V
For current to flow, VGS < VT Enhancement mode: VT < 0 Depletion mode: VT > 0
Transistor is ON when VG=0V
(n+ denotes very heavily doped n-type material; p+ denotes very heavily doped p-type material)
MOSFET Circuit Symbols

NMOS n+ poly-Si n+ p-type Si n+
PMOS p+ poly-Si p+ n-type Si p+
G
Body
Body
MOSFET Terminals
The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
For a p-channel MOSFET, the SOURCE is biased at a higher potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
The BODY terminal is usually connected to a fixed potential.

For an n-channel MOSFET, the BODY is connected to 0 V For a p-channel MOSFET, the BODY is connected to VDD
NMOSFET IG vs. VGS Characteristic

Consider the current IG (flowing into G) versus VGS :
IG S VGS + G D +
oxide semiconductor
VDS
IG
The gate is insulated from the semiconductor, so there is no significant steady gate current. always zero! VGS
NMOSFET ID vs. VDS Characteristics Next consider ID (flowing into D) versus VDS, as VGS is varied:
S VGS + G D + ID VDS
oxide semiconductor
ID VGS > VT zero if VGS < VT VDS
Above threshold (VGS > VT): inversion layer of electrons appears, so conduction between S and D is possible Below threshold (VGS < VT): no charge no conduction
The MOSFET as a Controlled Resistor The MOSFET behaves as a resistor when VDS is low:
Drain current ID increases linearly with VDS Resistance RDS between SOURCE & DRAIN depends on VGS
RDS is lowered as VGS increases above VT NMOSFET Example: ID VGS = 2 V VGS = 1 V > VT VDS IDS = 0 if VGS < VT Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)] where Cox ox / tox
oxide thickness tox
ID vs. VDS Characteristics
The MOSFET ID-VDS curve consists of two regions:

1) Resistive or Triode Region: 0 < VDS < VGS VT
V DS V GS V T 2 V DS = n C ox
W ID L where k n = kn
process transconductance parameter
2) Saturation Region: VDS > VGS VT
W kn (VGS VT )2 I DSAT = 2 L = n C ox where k n
CUTOFF region: VG < VT
The Evolution Of IGBT

Part I: Bipolar Power Transistors
Bipolar Power Transistor Uses Vertical Structure For Maximizing Cross Sectional Area Rather Than Using Planar Structure
Base Emitter
Collector
N+ P
Base
N+
N-
Emitter
Collector

Part II: Power MOSFET
Power MOSFET Uses Vertical Channel Structure Versus The Lateral Channel Devices Used In IC Technology
Lateral MOSFET structure

Part III: BJT(discrete) + Power MOSFET(discrete)
Discrete BJT + Discrete Power MOSFET In Darlington Configuration
C N-MOSFET D S G
NPN

Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
More Powerful And Innovative Approach Is To Combine Physics Of BJT With The Physics Of MOSFET Within Same Semiconductor Region This Approach Is Also Termed Functional Integration Of MOS And Bipolar Physics Using This Concept, The Insulated Gate Bipolar Transistor (IGBT) Emerged Superior On-State Characteristics, Reasonable Switching Speed And Excellent Safe Operating Area

Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
IGBT Fabricated Using Vertical Channels (Similar To Both The Power BJT And MOSFET)
Device Operation
Operation Of IGBT Can Be Considered Like A PNP Transistor With Base Drive Current Supplied By The MOSFET
DRIVER CIRCUIT (BASE / GATE)
Interface between control (low power electronics) and (high power) switch. Functions: amplifies control signal to a level required to drive power switch provides electrical isolation between power switch and logic level Complexity of driver varies markedly among switches. MOSFET/IGBT drivers are simple but GTO drivers are very complicated and expensive.
ELECTRICAL ISOLATION FOR DRIVERS
Isolation is required to prevent damages on the high power switch to propagate back to low power electronics. Normally opto-coupler (shown below) or high frequency magnetic materials (as shown in the thyristor case) are used.
ELECTRICAL ISOLATION FOR DRIVERS
Power semiconductor devices can be categorized into 3 types based on their control input requirements: a) Current-driven devices BJTs, MDs, GTOs b) Voltage-driven devices MOSFETs, IGBTs, MCTs c) Pulse-driven devices SCRs, TRIACs
CURRENT DRIVEN DEVICES (BJT)
Power BJT devices have low current gain due to constructional consideration, leading current than would normally be expected for a given load or collector current. The main problem with this circuit is the slow turn-off time. Many standard driver chips have built-in isolation. For example TLP 250 from Toshiba, HP 3150 from HewlettPackard uses opto-coupling isolation.
ELECTRICALLY ISOLATED DRIVE CIRCUITS
EXAMPLE: SIMPLE MOSFET GATE DRIVER
Note: MOSFET requires VGS =+15V for turn on and 0V to turn off. LM311 is a simple amp with open collector output Q1. When B1 is high, Q1 conducts. VGS is pulled to ground. MOSFET is off. When B1 is low, Q1 will be off. VGS is pulled to VGG. If VGG is set to +15V, the MOSFET turns on.

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UNIT I Power Semiconductor Devices

Fig. 1. The power semiconductor devices family

Power MOSFET: Structure

Fig.2.Repetitive pattern of the cells structure in power MOSFET

Power MOSFET: R-V Characteristics

Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

Thyristor: I-V Characteristics

Different types of Thyristors

Symbol of Silicon Controlled Rectifier

10m 30-100m 50-1000m 30-50m

Simplified model of a thyristor

Effects of gate current

Two Transistor Model of SCR

Considering NPN transistor of the equivalent circuit, I C = I C2 , I B = I B2 , I E2 = I K = I A + I G I C2 = 2 I k + I CBO2 I C2 = 2 ( I A + I G ) + I CBO2 ( 2 )

From the equivalent circuit, we see that I C2 = I B1

Case 1: When I g = 0 IA = I CBO1 + I CBO2 1 (1 + 2 )

IA Anode current begins to decrease Commutation Recovery di dt Recombination

off time off time

Methods of Thyristor Turn-on

Phase Control Thyristor

They use amplifying gate thyristor.

Fast Switching Thyristors

Bidirectional Triode Thyristors (TRIAC)

Mode-I Operation MT (+)

MT2 Positive, Gate Positive

Mode-II Operation MT (+)

P1 Initial conduction N3 G N1 P2 N2 MT1 () Final conduction

MT2 Positive, Gate Negative

MT2 Negative, Gate Positive

MT2 Negative, Gate Negative

BJT modes of operation

Mode Cutoff Forward active Reverse active Saturation

EBJ Reverse Forward Reverse Forward

CBJ Reverse Reverse Forward Forward

BJT modes of operation

BJT structure (active)

N-channel vs. P-channel MOSFETs

MOSFET Circuit Symbols

PMOS p+ poly-Si p+ n-type Si p+

The BODY terminal is usually connected to a fixed potential.

NMOSFET IG vs. VGS Characteristic

ID VGS > VT zero if VGS < VT VDS

oxide thickness tox

ID vs. VDS Characteristics

The MOSFET ID-VDS curve consists of two regions:

process transconductance parameter

2) Saturation Region: VDS > VGS VT

W kn (VGS VT )2 I DSAT = 2 L = n C ox where k n

CUTOFF region: VG < VT

The Evolution Of IGBT

The Evolution Of IGBT

Lateral MOSFET structure

The Evolution Of IGBT

The Evolution Of IGBT

The Evolution Of IGBT

DRIVER CIRCUIT (BASE / GATE)

ELECTRICAL ISOLATION FOR DRIVERS

ELECTRICAL ISOLATION FOR DRIVERS

CURRENT DRIVEN DEVICES (BJT)

ELECTRICALLY ISOLATED DRIVE CIRCUITS

EXAMPLE: SIMPLE MOSFET GATE DRIVER