1. A N-type semiconductor impur ities are: :->tetravalent 2.

A P-N junction diode s dynamic conductance is directly proportional to :->the current 3. A p-type semiconductor impurities are :->pentavalent 4. A p-type semiconductor is having _ _ _ _ _ _ _ impur ities: :->boron 5. Any voltage that is connected across a P-N junction is called _ _ _ _ _ _ _ _ voltage. :->Bias 6. Extrinsic semiconductor means :->Pure semiconductor without any impurities 7. For a silicon diode, the value of the forward-bias voltage typically :->must be greater than 0.7V 8. In a forward biased PN diode, the injected hole current in the n-region Is proportional to: _ _ _ _ _ _ _ __ (if Q is the total stored charge) :->Q 9. In a PN diode ,hole diffuse from p-region to n-region because: :->there is higher concentration of holes in the p-region 10. In a PN diode, with the increase of reverse bias, the reverse current: :->remains constant 11. In a PN-Junction junction region consists of :->Depletion region 12. In pn junction depletion region formed by recombination of _ _ _ _ _ _ _ , _ _ _ _ _ _ : >electrons , holes 13. P-N junction diode acts as a _ _ _ _ _ _ in forward and reverse bias conditions. :->Switch 14. Units of Forbidden gap in semiconductors is :->ev 15. When a P-N junction is formed, diffusion current causes :->Barrier potential 16. When a P-N junction is forward biased :->the current is produced by both holes and _ electrons. 1 A resistor with colour bands Red, Violet, Green and Black will have a value (A) 27 K 10% K (B) 2.7 M 20% K (C) 270 K 5% K (D) 2.7 K 2% K Ans: B 2 Avalanche breakdown results basically due to (A) impact ionization (B) strong electric field across the junction (C) emission of electrons (D) rise in temperature Ans: A 3) At room temperature, the current in an intrinsic semiconductor is due to (A) holes (B) electronics (C) ions (D) holes and electronics Ans: D 4) An intrinsic semiconductor at the absolute zero temperature (A) behaves like a metallic conductor (B) behaves like an insulator (C) has a large number of holes (D) has a large number of electrons 5) Which of the following diodes is operated in reverse bias mode ? (A) P-N junction (B) Zener (C) Tunnel (D) Schottky Ans: B 6) Which of the following doping will produce a p-type semiconductor (A) Germanium with phosphorus (B) Silicon with Germanium (C) Germanium with Antimony (D) Silicon with Indium Ans: D 7) The depletion region in a Junction Diode contains (A) only charge carriers (of minority type and majority type) (B) no charge at all (C) vacuum, and no atoms at all (D) only ions i.e., immobile charges Ans: D

Ans: B

8) The current flowing in a certain PN junction at room temperature is 2 X 10-7 A, when a large reverse bias voltage is applied. Calculate the current when a forward voltage of 0.1 V is applied across the junction. Ans:26.38micro amps 9) Fermi level in Intrinsic semiconductor lies (a) close to conduction band (b) In the middle (c) close to valence band (d)None of the these 10) The rate of increase of reverse saturation current for Germanium diode is, (a) 5% (b) 4% (c) 1% (d) 7% 11) Zener breakdown mechanism needs relatively .............................. electric field compared to Avalanche Breakdown. 12) Typical value of Eo = .............................. eV 13) Value of Volt equiv alent of Temperature at-25C is ............................. . 14) In n-type semiconductor, Fermi Level lies close to ............................. . 15) According to Law of Mass Action In semiconductors, ............................ .. 16). Electronic distribution of an Si atom is (a) 2, 10, 2 (b) 2, 8, 4 (c) 2, 7, 5 (d) 2, 4, 8. 17) Semiconductor materials have ................. bonds. (a) ionic (b) covalent (c) mutual (d) metallic. 18) Current flow in a semiconductor depends on the phenomenon of (a) drift (b) diffusion (c) recombination (d) all of the above. 19) The process of adding impurities to a pure semiconductor is called (a) mixing (b) doping (c) diffusing (d) refining. 20) The most widely used semiconducting material in electronic devices is (a) germanium (b) silicon (c) copper (d) carbon 21) Electron-hole pairs are produced by (a) recombination (b) thermal energy (c) ionization (d) doping 22. Hall effect is observed in a specimen when it (metal or a semiconductor) is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen will be in (a) a direction normal to both current and magnetic field (b) the direction of current (c) a direction anti parallel to the magnetic field (d) an arbitrary direction depending upon the conductivity of the specimen.