IPMS MEMS and ASIC design capabilities

Harald Schenk

Fraunhofer IPMS

IPMS MEMS design capabilities / services

MEMS design and layout in-depth know-how in physical domain simulation, including coupled domain simulation reduced order models tools: ANSYS, COMSOL, MATLAB, SIMULINK, MATHEMATICA, CADENCE ASIC design and layout Complete analog, digital and mixed-signal design & simulation integration of actuators and sensors MEMS-on-CMOS OLED-on-CMOS tool: CADENCE

Fraunhofer IPMS

MEMS simulation process/methodology

geometry, environment

Fraunhofer IPMS

MEMS Design: Physical domains

Structural mechanics
hinges cantilevers dynamical behaviour inertial effects optimization algorithms stress/load analysis linear and non-linear effects
Finite Element Analysis: Optimization of stress distribution in torsional springs
G E

stress distribution

optimization
Finite Element Analysis: Model of a mirror plate suspended by 8 distributed spings to enhance dynamic mirror flatness

Fraunhofer IPMS

MEMS Design: Physical domains

Modal analysis (FEM)
eigenmode analysis for wanted und interfering modes flexible modular FEM model generation for 1D- or 2D-scanning mirrors, translation mirror pre-stress modal analysis to include additional nonlinear constraints
intended eigenmode interfering eigenmode

2D-Torsional Scanning Mirror

1D-Translational Mirror

intended eigenmode

interfering eigenmode

Fraunhofer IPMS

MEMS Design: Physical domains

Fluid mechanics
friction damping fluidic flow analysis flow profiles fluid / structure interaction non-linear effects optimization
FEA: Pressure, fluid flow profile and damping force interaction of out of plane comb electrode fingers

fluid flow profile and damping force

FEA: Pressure and fluid flow profile of an resonant rocking micro plate

Fraunhofer IPMS

MEMS Design: Physical domains

Electrical field
Steady-state current conduction analysis time-transient electric field analyses electrical field distribution 2D- or 3D-FEM-field models capacitance simulation for complex structures electrostatic forces
engaged
x 10 1.5
14

3D-combfinger capacitance
deflected

field distribution

3D-FEM model
3D FEA 2D FEA fit analytic hybrid

C/F
0.5 a) 0 0 5 10 x /o 15 20 25

Fraunhofer IPMS

Vo rs ch

MEMS Design: Physical domains

Piezoresistivity
structure mechanics / electric interaction load dependent resistance & voltage stress-, electric- and current-field distribution normal and sheer stress transducer concepts structural and doping level optimization
j

local resistance minima

g la

piezoresistive sensor

FEA: Normal strain in an optimized silicon torsional spring sensor geometry

0

FEA: Strain depending current density

Fraunhofer IPMS

MEMS Design: Physical domains

Piezo electricity
electric / structure mechanics interaction multilayered material stack deformation profiles voltage dependent deformation of bi- and multimorph layers thermal stress optimization layered stack optimization
FEA: Deformation profile of an piezoelectric bimorph mirror for active focus variation

piezo electric bimorph

Fraunhofer IPMS

MEMS Design: Physical domains

Optics
Bragg mirrors AR/HR coatings influence of mirror deformation on optical properties point spread function (PSF) modulation transfer function (MTF)
Stress & temperature compenstated HR bragg mirror
1.0

Bragg mirror

optical quality
MTF

0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4

infinite stiffness distributed springs conventional design

0.6 kx / kmax

0.8

1.0

Point spread function and modulation transfer function

Fraunhofer IPMS

MEMS Design: Physical domains

Coupled field
magneto-structural analysis electro-thermal analysis structural-thermal or structural-thermalelectric analysis piezoelectric or piezoresistive analysis
heating expansion

temperature/resistance change versus Joule heating (transient)

silicon spring with high-doped layer
16.0 14.0 12.0

A MES-B.10-var-2: Flexure-H eating(86V,tau=0.27s,)

current / mA

10.0 8.0 6.0 4.0 2.0 0.0

0 10 20 30 40 50 60 70

120.0 110.0 100.0 90.0 80.0 70.0 60.0 50.0 40.0 30.0 20.0 0 6.4 6.3 10 20 30 40 50 60 70

resistance / kOhm

temperature / C

6.2 6.1 6.0 5.9 5.8 5.7 5.6 0 10 20 30 40 50 60 70

tim e / s

Fraunhofer IPMS

MEMS Design: Physical domains

Coupled field
magneto-structural analysis electro-thermal analysis structural-thermal or structural-thermalelectric analysis piezoelectric or piezoresistive analysis
1 1 contribution of inductance 2

simulation of magneto static field distribution and force

load: current density 2 coil structure on moveable mirror plate (1) and fixed frame (2) 2D-simulation in side view magnetic force 1

Fraunhofer IPMS

System Design
Controller circuit
network based approach system response dynamics controller circuit synthesis
network model of the MEMS device

System response

heuristic controller

step response

Fraunhofer IPMS

ASIC Design: Mixed-signal (analog + digital)

MEMS ASICs
clock control signals 256 data inputs

control unit
row clock

column clock

column addressing

column driver

pixel area

Controller Circuits for Actuators and Displays

MOEMS-on-CMOS OLED-on-CMOS driver ASIC's (voltage, current drive) optimization algorithms

2048 x 512 pixel

Steuerung mit PC Programmierinterface Betriebsspannung

Netzteil /A 1 3... 5...12 V

USB

15mm
Schnittstelle ProjektorDemonstrator

JTAG

38mm

row addressing

active matrix

MOEMS-on-CMOS active matrix back-plane

0 200 V

DC/DC 200V

FPGA / MSP

Quarz

control logic

row driver

200 V

Jumper

5V

HV - Erzeugung Kanal X

Frequenzteiler Kanal Y

Read-Out Circuits for Sensors: capacitance,

magnetic field sensors (Hall), opto sensors (CMOS photodiodes)

PLL

PLL

Charging Amplifier

Charging Amplifier

PD
OPV Gain 10 20

PD
OPV Gain 10 20

Piezo (optional)

Piezo (optional)

Mirror
(optional)

MEMS driver & controller

OLED-on-CMOS (micro display)

Fraunhofer IPMS

ASIC Design: Analog

Sensor integration
on-chip signal acquisition integration into processing environment Opto-ASICs CMOS embedded magnetic field sensors:
flux gate, Hall
Opto ASIC Sensor signal conditioner PS2A Hall line sensor

pressure/temperature integrated sensor circuits

OLED microdisplay with embedded CMOS photodiodes

Opto ASIC with embedded OLED illumination

Fraunhofer IPMS

ASIC Design: Digital

IP Cores
interfaces (e. g. MEMS projector control) controller/processor (e. g. embedded microcontroller MSP430) cryptography transponder (e. g. smart RF-ID)
RF FE
Controller MSP430 & control logic
EEPROM 512

MEMS projector interface control

RAM 8kx8

Flash 8kx16

controller/ processor

Fraunhofer IPMS

Mixed-signal IPMS CMOS Design Portfolio

Technology HV
5/2.0m 1.5m 1.2m 1.0m 0.8m 0.6m 1.0m SOI 1.0m 0.6m 0.35m 0.18m 0.25m 0.18 m 0.14 m 0.11 m HV: high voltage + + + + + + + + + -

Ana NVM
+ + + + + + + + + + + + + + + + + + + + + -

6 6 6 6 6 6 6 6" 6 8 8" 8 8 8 8

Major application
MEMS, mixed-sig mixed-sig, sensor MEMS Controller, mixed-sig, OLED, sensor,... analog, mixed-sig, sensor,... analog, mixed-sig, MEMS, ... analog, mixed-sig, digital analog, mixed-sig, sensor, display OLED-on-CMOS, sensor MEMS control, transponder, display, OLED-on-CMOS MEMS control, sensor, OLED-on-CMOS sensor, OLED-on-CMOS, display analog HS I/O (1.25Gbps) analog HS I/O (1.25Gbps) analog HS I/O (1.25Gbps) analog HS I/O (3.125Gbps) Prog.: non-volatile storage

Source

I(P)MS

silicon foundry

customer (IDM)

MS: mixed-signal/analog

: wafer diameter

Fraunhofer IPMS

Contact

Dr. Harald Schenk deputy director Fraunhofer Institute for Photonic Microsystems Maria-Reiche-Str. 2 D-01109 Dresden Germany

Fraunhofer IPMS