Sample solutions P3000 LON-CAPA Set 4 ____________________________ 1. Carrier Drift: From Neamen sect. 4.1. A potential difference of 2.

40 V is applied across sample of n-type semiconductor with a length of 0.65 cm. The average electron drift velocity is 7.20103 cm/s. Enter the electron mobility in units of cm^2/(V*s).

Correct, computer gets: 1.95e+03

2. Carrier Drift: From Neamen Sect. 4.1. A perfectly compensated semiconductor is one in which the donor and acceptor impurity concentrations are exactly equal. Assuming complete ionizaton, determine the conductivity, at T=300K, of Germanium in which the impurity concentrations are N_a=N_d=6.651013 cm^-3. Enter your answer in (Ohm*cm)^-1. Assume that this is in the low doping concentration limit for which the carrier mobilities in Germanium are mu_n=3900 cm^2/V*s and mu_p=1900 cm^2/V*s. (For the intrinsic carrier concentration, use the value from table B4 in your text.)

Correct, computer gets: 2.23e-02

Hint: What are the properties of a perfectly compensated semiconductor?

3. Carrier Drift: From Neamen Sect. 4.1. An n-type sample of Silicon has a resistivity of 7.95 Ohm*cm at T=300 K. You can assume that it is in the low doping concentration limit where the electron mobility for Silicon is mu_n=1350 cm^2/(V*s). Determine the donor impurity concentration and enter your answer in cm^-3.

Correct, computer gets: 5.82e+14

4. Carrier Diffusion: From Neamen sect. 4.2. Consider a sample of p-type GaAs at T=300 K. The hole concentration decreases linearly with distance x from one end and is given by p(x)=(3.251015 cm^-3) - C*x where C is a constant. The diffusion current density is found to be J_p=0.27 A/cm^2. The hole diffusion constant is 10.4 cm^2/s. What is the hole concentration at x = 4.2010-3 cm. Enter your answer in cm^-3.

Correct, computer gets: 2.57e+15

Hint:

5. Carrier Diffusion: From Neamen sect. 4.2. The hole concentration in a sample of ptype silicon at T=300 K is given by p=(2.081016 cm^-3)*(1-(x/L)) for 0 < x < L where L=1.8010-3 cm. The hole diffusion constant is 12.4 cm^2/s. In the first box, enter the diffusion current density at x=0. In the second box, enter the diffusion current density at x=4.5010-4 cm. In the third box, enter the diffusion current density at x=9.0010-4 cm. Enter your answers in A/cm^2.

Correct, computer gets: 2.29e+01, 2.29e+01, 2.29e+01

Hint:

6. Carrier Diffusion: From Neamen sect. 4.2. The total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and is equal to 1.001016 cm^-3. The hole concentration varies with x and is given by p(x)=(1.001015 cm^-3)*exp(-x/L) for positive x where x is in cm and L=1.1510-3 cm. The hole diffusion coefficient is D_p=12.0 cm^2/s and the electron mobility is mu_n=1000 cm^2/(V*s). The total current density is J=4.7 A/cm^2. The resulting hole diffusion current density depends on x and has the form J_p,dif(x)=A*exp(-x/L) where A is a constant. In the first box, enter the value of the constant A in A/cm^2. You can calculate the electron drift current from the total current and the hole diffusion current and then find the electric field as a function of x. The resulting expression for the electric field has the form epsilon_x=B-C*exp(-x/L) where B and C are constants. In the second box, enter the constant B in units of V/cm. In the third box, enter the constant C in units of V/cm.

Correct, computer gets: 1.67e+00, 2.94e+00, 1.04e+00

7. Graded Impurity Distribution: From Neamen sect. 4.3. Consider a semiconductor in thermal equilibrium (no current) at T=300 K. Assume that the donor concentration varies exponentially with x so that N_d(x)=N_d0*exp(-alpha*x) for x between 0 and 1/alpha. In this expression, N_d0 is a constant, x is in cm, and alpha=8.1 cm^-1. You should be able to find an expression for the electric field as a function of x between x=0 and x=1/alpha. Using this expression, calculate the magnitude of the potential difference between x=0 and x=1/alpha. Enter your answer in units of V. Hint: Be very careful with your choice of units for any fundamental constants in this problem. Is your potential difference a reasonable magnitude?

8. Hall Effect: From Neamen sect. 4.5. A silicon Hall device at T=300 K has the following geometry: d=0.0017 cm, W=0.021 cm, and L=0.165 cm. The electrical parameters measured are: I_x=0.74 mA, V_x=13.3 V, V_H=4.6 mV, and B_z=0.20 T. In the first box, enter "p" if this material is p-type or "n" if this material is n-type. In the second box, enter the majority carrier concentration in cm^-3. In the third box, enter the majority carrier mobility in cm^2/(V*s).

Correct, computer gets: p, 1.18e+16, 1.36e+02