ZVP4525G

250V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. SOT89 and SOT23-6 versions are also available.

FEATURES
High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Complementary N-channel type ZVN4525G SOT223 package

SOT223

APPLICATIONS
Earth recall and dialling switches Electronic hook switches High voltage power MOSFET drivers Telecom call routers Solid state relays

ORDERING INFORMATION
DEVICE ZVP4525GTA ZVP4525GTC REEL SIZE 7 13 TAPE WIDTH 8mm embossed 8mm embossed QUANTITY PER REEL 1000 units 4000 units

S D

G
DEVICE MARKING
ZVP4525G

TOP VIEW

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SEMICONDUCTORS

ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-source voltage Gate source voltage Continuous drain current (V GS =10V; TA=25C) (a) (V GS =10V; TA=70C) (a) SYMBOL V DSS V GS ID ID I DM IS I SM PD LIMIT 250 40 -265 -212 -1 -0.75 -1 2 16 -55 to +150 UNIT V V mA mA A A A W mW/C C

Pulsed drain current (c) Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T A =25C (a) Linear derating factor Operating and storage temperature range

T j : T stg

THERMAL RESISTANCE
PARAMETER Junction to ambient Junction to ambient
(a) (b)

SYMBOL R JA R JA

VALUE 63 26

UNIT C/W C/W

NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

NB High voltage applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.

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SEMICONDUCTORS

ZVP4525G
CHARACTERISTICS

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ZVP4525G
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance
(1)

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS

V (BR)DSS -250 I DSS I GSS V GS(th) R DS(on) -0.8

-285 -30 1 -1.5 10 13 -500 100 -2.0 14 18

V nA nA V mS

I D =-1mA, V GS =0V V DS =-250V, V GS =0V V GS = 40V, V DS =0V I =-1mA, V DS = V GS D V GS =-10V, I D =-200mA V GS =-3.5V, I D =-100mA V DS =-10V,I D =-0.15A

Forward transconductance (3) DYNAMIC

(3)

g fs

80

200

Input capacitance Output capacitance Reverse transfer capacitance SWITCHING

(2) (3)

C iss C oss C rss

73 12.8 3.91

pF pF pF V DS =-25 V, V GS =0V, f=1MHz

Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate drain charge SOURCE-DRAIN DIODE Diode forward voltage (1) Reverse recovery time (3) Reverse recovery charge
(3)

t d(on) tr t d(off) tf Qg Q gs Q gd

1.53 3.78 17.5 7.85 2.45 0.22 0.45 3.45 0.31 0.63

ns ns ns ns nC nC nC V DS =-25V,V GS =-10V, I D =-200mA(refer to test circuit) V DD =-30V, I D =-200mA R G =50 , V GS =-10V (refer to test circuit)

V SD t rr Q rr 205 21

0.97 290 29

V ns nC

T j =25C, I S =-200mA, V GS =0V T j =25C, I F =-200mA, di/dt= 100A/ s

NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

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SEMICONDUCTORS

ZVP4525G
TYPICAL CHARACTERISTICS

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ZVP4525G
CHARACTERISTICS

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SEMICONDUCTORS

TEST CIRCUITS

ZVP4525G

Current Regulator

QG

50k 12V 0.2F 0.3F

Same as D.U.T

10V
QGS QGD
IG

VDS D.U.T

VG

VGS

ID

Charge

Basic Gate Charge Waveform

Gate Charge Test Circuit

VGS 10%
VGS RG

RD VDS Vcc

90% VDS
td(on)
tr

-10V
td(off) tf

Pulse Width < 1S Duty Factor 0.1%

Switching Time Waveforms

Switching Time Test Circuit

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ZVP4525G
PACKAGE OUTLINE PAD LAYOUT DETAILS

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS
Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches

Zetex Semiconductors plc 2004

Europe Zetex GmbH Streitfeldstrae 19 D-81673 Mnchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com

These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com

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