Pyramis Corporation

The Silicon System Solutions Company Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Features: Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information
PART NUMBER PFB2N60 PFF2N60 PACKAGE TO-220 TO-220F BRAND PFB2N60 PFF2N60
GDS

PFB2N60/PFF2N60
www.DataSheet4U.com PRELIMINARY

N-Channel MOSFET

VDSS 600V

RDS(ON) typical 3.7

ID 2.1A

GDS TO-220F Not to Scale

TO-220 Not to Scale

Absolute Maximum Ratings

Symbol
VDSS ID ID@ 100 C IDM PD VGS EAS IAS dv/dt TL TPKG TJ and TSTG
o

Tc=25 oC unless otherwise specified Parameter

PFB2N60
(NOTE *1)

PFF2N60
2.1*

Units
V A

Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 C Gate-to-Source Voltage Single Pulse Avalanche Engergy L=38mH, ID=2.1 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt Maximum Soldering Lead Temperature Max Package Body for 10 seconds Operating Junction and Storage Temperature Range
o

600 2.1 Fig.ure 3

(NOTE *2)

Figure 6 54 0.43 30 84 Figure 8 23 0.18 W W/ oC V mJ

(NOTE *3)

3.0 300 260 -55 to 150

V/ns o C

* Drain current limited by Maximum Junction Temperature.

Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the semiconductor device.

Thermal Resistance
Symbol
RJC RJA

Parameter
Junction-to-Case. Junction-to-Ambient

PFB2N60 PFF2N60
2.3 62.5 5.5 62.5

Units
o

Test Conditions
Water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC 1 cubic foot chamber, free air.

C/W

2004 Pyramis Corp.

PFB2N60/PFF2N60 REV. C.

May 2004

PRELIMINARY
OFF Characteristics
Symbol
BVDSS BVDSS / TJ

Tc=25 oC unless otherwise specified Parameter Min.

600 ---

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Typ.
-0.7 -----

Max.
--25

Units
V V/ C
o

Test Conditions
VGS=0V, ID=250 A Reference to 25 oC, ID=250A VDS=600V, VGS=0V TJ=25 oC VDS=480V, VGS=0V TJ=125 oC VGS=+30V VGS= -30V

Drain-to-Source Breakdown Voltage BreakdownVoltage Temperature Coefficient, Figure 11.

IDSS

Drain-to-Source Leakage Current -250 100 -100

IGSS

Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

---

nA

ON Characteristics
Symbol
RDS(ON) VGS(TH) gfs

Tc=25 oC unless otherwise specified Parameter Min.

-2.0 --

Typ.
3.7 -2.5

Max.
4.6 4.0 --

Units
V S

Test Conditions
VGS=10V, ID=2.1A
(NOTE *4)

Static Drain-to-Source On-Resistance Figure 9 and 10. Gate Threshold Voltage, Figure 12. Forward Transconductance

VDS=VGS, ID=250 A VDS=15V, ID=2.1A

(NOTE *4)

Dynamic Characteristics
Symbol
Ciss Coss Crss Qg Qgs Qgd

Essentially independent of operating temperature Parameter Min.

-------

Typ.
330 46 9.0 12.5 2.2 6.0

Max.
-------

Units
pF

Test Conditions
VGS=0V, VDS=25V f =1.0MHz Figure 14 VDD=300V ID=2.1A Figure 15

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge

nC

Resistive Switching Characteristics

Symbol
td(ON) trise td(OFF) tfall Rise Time Turn-Off Delay Time Fall Time

Essentially independent of operating temperature Min.

-----

Parameter
Turn-on Delay Time

Typ.
13 13 34 26

Max.
-----

Units

Test Conditions
VDD=300V ID=2.1A VGS=10V RG=18

ns

2004 Pyramis Corp.

PFB2N60/PFF2N60 REV. C, Page 2 of 7

May 2004

PRELIMINARY
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr

Tc=25 oC unless otherwise specified Min.

------

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Parameter
Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Typ.
---172 0.75

Max.
2.1 8.4 1.5 258 1.13

Units
A A V ns C

Test Conditions
Integral pn-diode in MOSFET IS=2.1A, VGS=0V VGS=0V IF=2.1A, di/dt=100 A/s

Notes: *1. TJ = +25 oC to +150 oC. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD= 2.1A di/dt < 100 A/s, VDD < BVDSS, TJ=+150 oC. *4. Pulse width < 380s; duty cycle < 2%.

2004 Pyramis Corp.

PFB2N60/PFF2N60 REV. C, Page 3 of 7

May 2004

PRELIMINARY
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1.000
Duty Cycle 50% 20%

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ZJC, Thermal Impedance

10%

0.100

5% 2%
1%

PDM

0.010

t1

single pulse

t2

NOTES: DUTY CYCLE: D=t1/t2 PEAK TJ=PDM x ZJC x RJC+TC

0.001 1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

tp, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation vs Case Temperature
60

Figure 3. Maximum Continuous Drain Current vs Case Temperature

2.5 2.0 1.5 1.0 0.5 0

PD, Power Dissipation (W)

40 30 20 10 0 25 50 75 100 125 150

ID, Drain Current (A)

50

25

50

75

100

125

150

TC, Case Temperature (oC) Figure 4. Typical Output Characteristics

5 4
PULSE DURATION = 250 s DUTY CYCLE = 0.5% MAX o TC = 25 C

TC, Case Temperature (oC) Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current
10
PULSE DURATION = 250 s DUTY CYCLE = 0.5% MAX o TC = 25 C

ID, Drain Current (A)

VG VGS = 5.5V

6.0V S=

RDS(ON), Drain-to-Source ON Resistance ( )

VG S

V = 15

9 8 7 6 5 4 3

3
VGS = 5.25V

ID = 2 A ID = 1A

VGS = 5.0V

1 0 0 5 10 15 20

VGS = 4.5V

25

10

11

12

13

14

15

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V) PFB2N60/PFF2N60 REV. C, Page 4 of 7 May 2004

2004 Pyramis Corp.

PRELIMINARY
Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

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FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: I = I 25 150 T C ---------------------125

IDM, Peak Current (A)

10

1 1E-6

VGS = 10V 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0

tp, Pulse Width (s)

Figure 7. Typical Transfer Characteristics

7
PULSE DURATION = 250 s DUTY CYCLE = 0.5% MAX VDS = 10 V

Figure 8. Unclamped Inductive Switching Capability

10

ID, Drain-to-Source Current (A)

5 4 3 2 1 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

+150 oC +25 oC -55 oC

IAS, Avalanche Current (A)

STARTING TJ = 150 oC

STARTING TJ = 25 oC

.1

If R= 0: tAV= (LIAS)/(1.3BVDSS-VDD) If R 0: tAV= (L/R) ln[IASR)/(1.3BVDSS-VDD)+1] R equals total Series resistance of Drain circuit

1E-6

10E-6

100E-6

1E-3

10E-3

100E-3

VGS, Gate-to-Source Voltage (V) Figure 9. Typical Drain-to-Source ON Resistance vs Drain Current RDS(ON), Drain-to-Source ON Resistance ()
10 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8
VGS = 10V VGS = 20 V PULSE DURATION = 2 s DUTY CYCLE = 0.5% MAX TC=25C

tAV, Time in Avalanche (s) Figure 10. Typical Drain-to-Source ON Resistance vs Junction Temperature
2.6 2.4

RDS(ON), Drain-to-Source Resistance (Normalized)

2.2 2.0 1.8 1.6 1.4 1.2 1.0 1.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150

PULSE DURATION = 250 s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 2.1A

ID, Drain Current (A)

TJ, Junction Temperature

(oC) May 2004

2004 Pyramis Corp.

PFB2N60/PFF2N60 REV. C, Page 5 of 7

PRELIMINARY
Figure 11. Typical Breakdown Voltage vs Junction Temperature BVDSS, Drain-to-Source Breakdown Voltage (Normalized)
1.15 1.2

Figure 12. Typical Threshold Voltage vs Junction Temperature www.DataSheet4U.com VGS(TH), Threshold Voltage (Normalized)

1.10 1.05 1.00 0.95 0.90 -75 -50

1.1 1.0 0.9

VGS = 0V ID = 250 A

0.8 0.7

VGS = VDS ID = 250 A

-25

0.0

25

50

75

100 125

150

-75

-50

-25

0.0

25

50

75

100

125 150

TJ, Junction Temperature (oC)

TJ, Junction Temperature (oC)

Figure 13. Maximum Forward Bias Safe Operating Area

10.0
TJ = MAX RATED, TC = 25 oC
10s

Figure 14. Typical Capacitance vs Drain-to-Source Voltage

1000
Ciss

ID, Drain Current (A)

10

C, Capacitance (pF)

100
Coss

1. 0m

1.0

10
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd Coss Cds + Cgd Crss = Cgd Crss

10

OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)

DC

m s

0.1

1 1 10 100 1000

10

100

1000

VDS, Drain-to-Source Voltage (V)

VDS, Drain Voltage (V)

Figure 15. Typical Gate Charge vs Gate-to-Source Voltage

12 40

Figure 16. Typical Body Diode Transfer Characteristics IDR, Reverse Drain Current (A)

VGS, Gate-to-Source Voltage (V)

10 8 6 4 2
ID = 2.1A VDS=150V VDS=300V VDS=450V

35 30 25 20 15 10 5 0 0.4 0.6 0.8

150 oC 25 oC -55 oC

0 0 2 4 6 8 10 12 14 16

VGS = 0V

1.0

1.2

1.4

1.6

1.8

2.0

QG , Total Gate Charge (nC)

VSD, Source-to-Drain Voltage (V) PFB2N60/PFF2N60 REV. C, Page 6 of 7 May 2004

2004 Pyramis Corp.

PRELIMINARY
www.DataSheet4U.com

Disclaimers: Pyramis Corporation reserves the right to make changes without notice in order to improve reliability, function or design. Pyramis Corporation does not assume any liability arising out of the application or use of any product or circuit designs described herein. Neither does it convey and license under its patent rights, nor the rights of others.

Life Support Policy: Pyramis Corporations products are not authorized for use as critical components in life support devices or systems without the expressed written approval of Pyramis Corporation. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

2004 Pyramis Corp.

2271 W. 205th Street, Suite 101, Torrance, CA 90501, USA Tel: 310-328-5399, FAX: 310-328-5055

PFB2N60/PFF2N60 REV. C, Page 7 of 7

May 2004