Surface Mount Silicon Rectifier Diode NRD Series

FEATURES
• VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE
• CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE
• FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS
• GLASS PASSIVATED CHIP CONSTRUCTION
• HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS)
• EASY PICK AND PLACE RoHS
Compliant
includes all homogeneous materials
CATHODE *See Part Number System for Details

1.25~1.45 2.54~2.79
MECHANICAL DATA:
SIZE: SMA/DO-214AC
3.99~4.50 CASE: Molded epoxy
TERMINALS: Solder plated Copper alloy
POLARITY: Indicated by cathode band
4.93~5.28 STANDARD PACKAGING: 12mm tape (EIA-RS-481)
WEIGHT: 0.064 gram
PART NUMBERING SYSTEM
1.98~2.29 NRD 4004 TR -5K F
.8~1.3 RoHS Compliant
0.76~1.27 0.1~0.2 Reel qty: (5K & 7.5K)
Tape and Reel
DIMENSIONS (mm) Voltage designator (See table below)
Series

MAXIMUM RATINGS (At TA=250C unless otherwise noted)

Ratings Symbol NRD4001 NRD4002 NRD4003 NRD4004 NRD4005 NRD4007 UNITS
Maximum Recurrent Peak Reverse voltage VRRM 50 100 200 400 600 1000 Volts
Maximum RMS voltage VRMS 35 70 140 280 420 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 1000 Volts
Maximum Average Forward Rectified Current TA=75°C Io 1.0 Amps
Peak Forward Surge Current 8.3ms single half sine-
IFSM 30 Amps
wave superimposed on rated load (JEDEC method)

ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)

Characteristics Symbol NRD4001 NRD4002 NRD4003 NRD4004 NRD4005 NRD4007 UNITS
Maximum Forward Voltage at 1.0A DC VF 1.1 Amps
Maximum Full Load Reverse Current
30 µAmps
Full Cycle Average @TA=75°C
IR
Maximum DC Reverse Current at @TA=25°C 5.0 µAmps
Rated DC Blocking Voltage @TA=125°C 50 µAmps
Maximum Thermal Resistance (Note 1) RqJL 30 °C/W
Typical Junction Capacitance (Note 2) CJ 15 pF
Operating and Storage Temperature Range TJ, TSTG -60 ~ +150°C °C
Maximum Reverse Recovery Time (Note 3) trr 2.5 µS
NOTES:
1. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns.
2. Measured at 1.0 MHz and applied average voltage of 4.0VDC.
3. Reverse recovery test conditions: If=0.5A, IR=1.0A, trr=0.25A

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 Surface Mount Silicon Rectifier Diode NRD Series
RATINGS AND CHARACTERISTICS CURVES
(NRD4001 THRU 4007 Typical Instanteous Forward Charateristics
per Element
100

Derating Curve for Output 40

Tj=25°C
Pulse Width=300µS
Rectified Current

Instanteous Forward Current

2% Duty Cycle
20
3.0
10
Average Forward Current

2.5 Single Phase Half Wave 60Hz

Resistive or Inductive Load
PCB Mounted

(Amps)
4.0
2.0 0n 0.315"x0.315" (8.0x8.0mm)
copper Pad Areas
2.0
(Amps)

1.5
1.0
1.0
0.4
0.5 0.2
0 0.1
0°C 50°C 75°C 100°C 150°C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Temperature (°C) Instanteous Forward Voltage (Volts)

Typical Peak Reverse Characteristics

100
Maximum Non-repetitive Peak
ForwardSurge Current
30
Instanteous Reverse Current (µA)

Forward Surge Current (Amps pk)

10
25
(Half Sine-wave)

Tj=100°C
1.0 20

15
Tj=75°C
0.1
10
Tj=25°C
5
0.01
0
1 2 6 10 20 40 60 100
Number of Cycles at 60Hz
0.001
0 20 40 60 80 100
Percentage of Peak Reverse Voltage
Typcial Junction Capacitance
Transient Thermal Impedance per Element
100 100
Thermal Impedance (°C/W)

50 50
Tj=25°C
f=1MHz
Capacitance (pF)

Vsig=50mVp-p
20 20

10 10
Units Mounted on 20in (5.4mm )
3 3

5 +0.5mil inches (0.013mm)

Thick Copper Land Areas

2 2

1 1
0.01 0.1 1.0 10 100 0.1 1.0 10 100 1000
Heating Time (Seconds) Reverse Voltage (Volts)

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