PD - 94494A

Typical Applications

HEXFET Power MOSFET

D

IRF1503S IRF1503L
VDSS = 30V RDS(on) = 3.3m

14V Automotive Electrical Systems 14V Electronic Power Steering Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Benefits

G S

ID = 75A

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

D2Pak IRF1503S

TO-262 IRF1503L

Absolute Maximum Ratings

Parameter
ID @ TC ID @ TC ID @ TC IDM PD @TC = 25C = 100C = 25C = 25C Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, V GS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

Max.
190 130 75 960 200 1.3 20 510 980 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)

Units
A

VGS EAS EAS (tested) IAR EAR TJ TSTG

W W/C V mJ A mJ C

Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
0.50

Max.
0.75 62

Units
C/W

www.irf.com

1
12/11/02

IRF1503S/IRF1503L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

Min. 30 2.0 75

Typ. 0.028 2.6 130 36 41 17 130 59 48 5.0 13 5730 2250 290 7580 2290 3420

Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 3.3 m VGS = 10V, ID = 140A 4.0 V VDS = 10V, ID = 250A S VDS = 25V, ID = 140A 20 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 140A 54 nC VDS = 24V 62 VGS = 10V VDD = 15V ID = 140A ns RG = 2.5 VGS = 10V D Between lead, 6mm (0.25in.) nH G from package and center of die contact S VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 24V, = 1.0MHz VGS = 0V, VDS = 0V to 24V

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Qrr ton Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.049mH RG = 25, IAS = 140A. (See Figure 12). ISD 140A, di/dt 110A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%.

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 190 showing the A G integral reverse 960 S p-n junction diode. 1.3 V TJ = 25C, IS = 140A, VGS = 0V 71 110 ns TJ = 25C, IF = 140A 110 170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

www.irf.com

IRF1503S/IRF1503L
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

1000

ID, Drain-to-Source Current (A)

100

ID, Drain-to-Source Current (A)

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

100

4.5V
10

4.5V

20s PULSE WIDTH Tj = 25C

1 0.1 1 10 100 10 0.1 1

20s PULSE WIDTH Tj = 175C

10 100

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

200

T J = 25C T J = 175C
Gfs, Forward Transconductance (S)

T J = 175C 160

ID, Drain-to-Source Current ()

120

100

T J = 25C

80

40 VDS = 25V 20s PULSE WIDTH 0 0 40 80 120 160 200

10 4.0 5.0 6.0

VDS = 25V 20s PULSE WIDTH

7.0 8.0 9.0 10.0

VGS , Gate-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance Vs. Drain Current

www.irf.com

IRF1503S/IRF1503L
10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd =C ds + Cgd

20 ID= 140A

8000

VGS , Gate-to-Source Voltage (V)

VDS= 24V

16

C, Capacitance (pF)

6000

Ciss

12

4000

Coss
2000

Crss
0 1 10 100

0 0 40 80 120 160 200 Q G Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000.0

10000 OPERATION IN THIS AREA LIMITED BY RDS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100.0 T J = 175C 10.0

1000

100

100sec 1msec

1.0

T J = 25C VGS = 0V 0.0 0.4 0.8 1.2 1.6 2.0

10 Tc = 25C Tj = 175C Single Pulse 1 1 10

10msec

0.1

100

VSD, Source-toDrain Voltage (V)

VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

www.irf.com

IRF1503S/IRF1503L
200
2.0

I D = 240A

LIMITED BY PACKAGE
160

RDS(on) , Drain-to-Source On Resistance

1.5

ID , Drain Current (A)

120

(Normalized)

1.0

80

0.5

40

V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

0 25 50 75 100 125 150 175

TC , Case Temperature ( C)

TJ, Junction Temperature

( C)

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10. Normalized On-Resistance Vs. Temperature

(Z thJC )

D = 0.50

0.20

Thermal Response

0.1

0.10 P DM 0.05 t1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = 2. Peak T t1/ t
2

J = P DM x Z thJC

+T C 1

0.01 0.00001

0.0001

0.001

0.01

0.1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRF1503S/IRF1503L
EAS , Single Pulse Avalanche Energy (mJ)
15V

1400 1200 1000 800 600 400 200 0 25 50 75 100 125 150 175

VDS

DRIVER

RG
20V VGS

D.U.T
IAS tp

+ V - DD

0.01

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS tp

Starting T J , Junction Temperature (C)

I AS

Fig 12b. Unclamped Inductive Waveforms

QG

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0

3.0

Charge

ID = 250A

Fig 13a. Basic Gate Charge Waveform

Current Regulator Same Type as D.U.T.

2.0

50K 12V .2F .3F

D.U.T. VGS
3mA

+ V - DS

1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200

T J , Temperature ( C )
IG ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage Vs. Temperature

www.irf.com

IRF1503S/IRF1503L
10000

Duty Cycle = Single Pulse

Avalanche Current (A)
1000

0.01
100

0.05 0.10
10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

600

EAR , Avalanche Energy (mJ)

500

TOP Single Pulse BOTTOM 50% Duty Cycle ID = 140A

400

300

200

100

0 25 50 75 100 125 150

Starting T J , Junction Temperature (C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC Iav = 2DT/ [1.3BVZth] EAS (AR) = PD (ave)tav

Fig 16. Maximum Avalanche Energy Vs. Temperature

www.irf.com

IRF1503S/IRF1503L
D.U.T
Driver Gate Drive

P.W.

Period

D=

P.W. Period VGS=10V

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

RG
dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test

V DD

VDD

+ -

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
RD

V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %

D.U.T.
+

-V DD

Fig 18a. Switching Time Test Circuit

VDS 90%

10% VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

www.irf.com

IRF1503S/IRF1503L

S @ 7 H V I U S 6 Q

@ 9 P 8 @ U 6 9

   ! 2  S 6 @ `

!  F @ @ X

G @ I DG

T  " $ A

G 6 I P DU 6 I S @ U I D

S D@ A DU 8 @ S

P B P G

` G 7 H @ T T 6

@ 9 P 8 U P G

D2Pak Part Marking Information

D2Pak Package Outline

www.irf.com

C U D X T  " # $ A !  S D ' @ I 6 9 P DT 8 T D U P C U G

   !  !  X X I P 9 @ G 7 H @ T T 6

G @ I DG ` G 7 H @ T T 6 @ C U I D

S @ 7 H V I U S 6 Q

@ 9 P 8 @ U 6 9

& ( ( 2 & S 6 @ `

( F @ @ X

8 @ DI G

TO-262 Part Marking Information

G 6 I DP U 6 I S @ U DI

S D@ DA U 8 @ S & ( (  ( X X I P 9 @ G 7 H @ T T 6 G "  " G DS I 6 DT DT C U ) @ G Q H 6 Y @ ( ' & @ 9 P 8 U P G

P B P G

` G 7 H @ T T 6

@ 9 P 8 U P G

IRF1503S/IRF1503L

TO-262 Package Outline

8 @ DI G ` G 7 H @ T T 6 @ C U DI

10

www.irf.com

IRF1503S/IRF1503L
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)

FEED DIRECTION 1.85 (.073)

1.65 (.065)

11.60 (.457) 11.40 (.449)

15.42 (.609) 15.22 (.601)

24.30 (.957) 23.90 (.941)

TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)

FEED DIRECTION

13.50 (.532) 12.80 (.504)

27.40 (1.079) 23.90 (.941)

4

330.00 (14.173) MAX.

60.00 (2.362) MIN.

NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039) 24.40 (.961) 3

30.40 (1.197) MAX. 4

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/02

www.irf.com

11