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DATA SHEET
Philips Semiconductors
Product specication
TDA6108JF
Black-Current Stabilization (BCS) circuit Thermal protection. GENERAL DESCRIPTION The TDA6108JF includes three video output amplifiers in one plastic DIL-bent-SIL 9-pin medium power (DBS9MPF) package (SOT111-1), using high-voltage DMOS technology, and is intended to drive the three cathodes of a colour CRT directly. To obtain maximum performance, the amplifier should be used with black-current control.
VERSION SOT111-1
BLOCK DIAGRAM
TDA6108JF 3
CASCODE 1
9, 8, 7
1, 2, 3 Ri Ra
MIRROR 3
Io(m)
CASCODE 2
MIRROR 2 4
MGL318
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
1 2 3 4 5 TDA6108JF 6 7 8 9
MGL319
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground); currents as specied in Fig.1; unless otherwise specied. SYMBOL VDD Vi Vom Voc Tstg Tj Ves supply voltage input voltage measurement output voltage cathode output voltage storage temperature junction temperature electrostatic handling human body model (HBM) machine model (MM) HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices (see Handling MOS Devices ). QUALITY SPECIFICATION Quality specification SNW-FQ-611 part D is applicable. 2000 300 V V PARAMETER 0 0 0 0 55 20 MIN. 12 6 VDD +150 +150 MAX. 250 V V V V C C UNIT
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
PARAMETER thermal resistance from junction to ambient thermal resistance from junction to n thermal resistance from heatsink to ambient note 1
CONDITIONS
VALUE 56 11 10
handbook, halfpage
Ptot (W)
(1)
The internal thermal protection circuit gives a decrease of the slew rate at high temperatures: 10% decrease at 130 C and 30% decrease at 145 C (typical values on the spot of the thermal protection circuit).
(2)
handbook, halfpage
0 20
20
60
100
6 K/W fin
MGK279
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
CHARACTERISTICS Operating range: Tj = 20 to +150 C; VDD = 180 to 210 V. Test conditions: Tamb = 25 C; VDD = 200 V; Vo(c1) = Vo(c2) = Vo(c3) = 12VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W (measured in test circuit of Fig.8); unless otherwise specied. SYMBOL Iq Vref(int) Ri G G VO(c) VO(c)(offset) PARAMETER quiescent supply current internal reference voltage (input stage) input resistance gain of amplier gain difference nominal output voltage at pins 7, 8 and 9 (DC value) differential nominal output offset voltage between pins 7 and 8, 8 and 9 and 9 and 7 (DC value) output voltage temperature drift at pins 7, 8 and 9 I i = 0 A I i = 0 A CONDITIONS 47.5 2.5 116 MIN. 8.8 TYP. 10.3 2.5 3.2 51.0 0 129 0 55.0 +2.5 142 5 V V MAX. 11.7 V k UNIT mA
Vo(c)(T)
10 0
mV/K mV/K
Vo(c)(T)(offset) differential output offset voltage temperature drift between pins 7 and 8, 8 and 9 and 7 and 9 Io(m)(offset) offset current of measurement Io(c) = 0 A; output (for 3 channels) 1.5 V < Vi < 5.5 V; 3 V < Vo(m) < 6 V linearity of current transfer 100 A < Io(c) < 100 A; 1.5 V < Vi < 5.5 V; 3 V < Vo(m) < 6 V
50
+50
Io(m)/Io(c)
0.9
1.0
1.1
maximum peak output current 50 V < Vo(c) < VDD 50 V (pins 7, 8 and 9) minimum output voltage (pins 7, 8 and 9) maximum output voltage (pins 7, 8 and 9) small signal bandwidth (pins 7, 8 and 9) large signal bandwidth (pins 7, 8 and 9) cathode output propagation time 50% input to 50% output (pins 7, 8 and 9) Vi = 7.0 V; note 1 Vi = 1.0 V; note 1 Vo(c) = 60 V (p-p) Vo(c) = 100 V (p-p) Vo(c) = 100 V (p-p) square wave; f <1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7
28
10
mA V V MHz MHz ns
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
SYMBOL tPco
PARAMETER difference in cathode output propagation time 50% input to 50% output (pins 7 and 8, 7 and 9 and 8 and 9) cathode output rise time 10% output to 90% output (pins 7, 8 and 9) cathode output fall time 90% output to 10% output (pins 7, 8 and 9) settling time 50% input to 99% < output < 101% (pins 7, 8 and 9)
CONDITIONS Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3) Vo(c) = 50 to 150 V square wave; f < 1 MHz; tf = 40 ns (pins 1, 2 and 3); see Fig.6 Vo(c) = 150 to 50 V square wave; f < 1 MHz; tr = 40 ns (pins 1, 2 and 3); see Fig.7 Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7 Vi = 4 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3) Vo(c) = 100 V (p-p) square wave; f < 1 MHz; tr = tf = 40 ns (pins 1, 2 and 3); see Figs 6 and 7 f < 50 kHz; note 2
MIN. 10 0
TYP.
MAX. +10
UNIT ns
to(r)
35
50
65
ns
to(f)
35
50
65
ns
tst
350
ns
SR
slew rate between 50 V to (VDD 50 V) (pins 7, 8 and 9) cathode output voltage overshoot (pins 7, 8 and 9)
1850
V/s
Ov
10
65 50
dB dB
1. See also Fig.5 for the typical DC-to-DC transfer of Vi to Vo(c). 2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
handbook, halfpage
200
MGL371
Vo(c) (V)
160
129
120
80
40
0 0 2
2.5
Vi (V)
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
4.18 Vi (V)
3.09 t
2.00
60 50
t to(r) tPco
MGL369
Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
4.18 Vi (V)
3.09 t
2.00
tst
51
Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.
1999 Oct 29
Philips Semiconductors
Product specication
TDA6108JF
Regarding dissipation, distinction must first be made between static dissipation (independent of frequency) and dynamic dissipation (proportional to frequency). The static dissipation of the TDA6108JF is due to voltage supply currents and load currents in the feedback network and CRT. The static dissipation Pstat equals: P stat = V DD I DD + 3 V O(c) I O(c) Where: VDD = supply voltage IDD = supply current VO(c) = DC value of cathode voltage IO(c) = DC value of cathode current. The dynamic dissipation Pdyn equals: P dyn = 3 V DD ( C L + C int ) f i V o(c)(p-p) Where: CL = load capacitance Cint = internal load capacitance (4 pF) fi = input frequency Vo(c)(p-p) = output voltage (peak-to-peak value) = non-blanking duty cycle. The IC must be mounted on the picture tube base print to minimize the load capacitance CL.
1999 Oct 29
10
Philips Semiconductors
Product specication
TDA6108JF
VDD C1 J1 1 Ri 1 Ra 22 nF Iom C9 3.2 pF J2 2 Ri 2 Ra 22 nF Iom C12 3.2 pF J3 3 Ri 3 Ra 22 nF Iom C15 3.2 pF VIP REFERENCE 5 C17 136 pF R6 100 k C14 136 pF R4 100 k C11 136 pF R2 100 k Rf Vof 6 C7 20 nF C8 10 F
Vi(1)
22 F C2
Voc(1)
C3 Vi(2) 22 F C4
Rf Vof Voc(2)
C5 Vi(3) 22 F C6
Rf Vof Voc(3)
TDA6108JF
4
Vo(m) 4V
MGL321
Current sources J1, J2 and J3 are to be tuned so that Vo(c) of pins 9, 8 and 7 is set to 100 V.
1999 Oct 29
11
Philips Semiconductors
Product specication
TDA6108JF
1, 2, 3
TDA6108JF
(1)
esd
from input circuit esd to black current measurement circuit from control circuit from input circuit Vbias
esd esd
flash 7, 8, 9
(1) All pins have an energy protection for positive or negative overstress situations.
1999 Oct 29
12
Philips Semiconductors
Product specication
TDA6108JF
SOT111-1
D1 q P P1 Q A2
A3 q1 q2
L 1 Z b2 e b b1 w M 9
e2
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 18.5 17.8 A2 A3 max. 3.7 8.7 8.0 A4 b b1 b2 c D (1) D1 E (1) e e2 L 3.9 3.4 P 2.75 2.50 P1 3.4 3.2 Q q q1 4.4 4.2 q2 5.9 5.7 w 0.25 Z (1) max. 1.0
65o 55o
15.5 1.40 0.67 1.40 0.48 21.8 21.4 6.48 2.54 2.54 15.1 1.14 0.50 1.14 0.38 21.4 20.7 6.20
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT111-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
1999 Oct 29
13
Philips Semiconductors
Product specication
TDA6108JF
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications. suitable suitable(1) WAVE
1999 Oct 29
14
Philips Semiconductors
Product specication
TDA6108JF
1999 Oct 29
15
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
545004/200/03/pp16
Oct 29