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SUP60N10-18P

Vishay Siliconix

N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.0183 at VGS = 10 V 0.023 at VGS = 8.0 V ID (A) 60 53 Qg (Typ.) 48

FEATURES
TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
Industrial Power Supply
TO-220AB

G D S Top View Ordering Information: SUP60N10-18P-E3 (Lead (Pb)-free) S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted


Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 70 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 20 60 50 100 45 101 150
b

Unit V

mJ W C

3.75 - 55 to 175

THERMAL RESISTANCE RATINGS


Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 1.0 Unit C/W

Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

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This datasheet has been downloaded from http://www.digchip.com at this page

SUP60N10-18P
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec
c

Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg
c

Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 C VDS = 100 V, VGS = 0 V, TJ = 175 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A, TJ = 125 C VGS = 8.0 V, ID = 10 A VDS = 15 V, ID = 15 A

Min. 100 2.5

Typ.

Max.

Unit

4.5 250 1 50 250

V nA A A

50 0.015 0.027 0.018 33 0.0183 0.033 0.023

2600 VGS = 0 V, VDS = 50 V, f = 1 MHz 230 80 48 VDS = 50 V, VGS = 10 V, ID = 50 A f = 1 MHz VDD = 50 V, RL = 1.0 ID 50 A, VGEN = 10 V, Rg = 1 0.25 16 13 1.1 12 10 18 8 2.4 20 20 35 15 ns 75 nC pF

Gate-Drain Charge Gate Resistance

Turn-On Delay Time Rise Timec

td(on) tr td(off) tf

Turn-Off Delay Timec Fall Timec

Drain-Source Body Diode Characteristics TC = 25 Cb Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, dI/dt = 100 A/s IF = 15 A, VGS = 0 V 0.85 80 4 160 240 60 100 1.5 120 A V ns A nC

Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100 VGS = 10 V thru 8 V 80 I D - Drain Current (A) VGS = 7 V 60 I D - Drain Current (A) 1.2 1.5

0.9

40

0.6 TC = 25 C 0.3 TC = 125 C TC = - 55 C 0 2 4 6 8 10

20

VGS = 6 V

0 0 1 2 3 4 5

0.0

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics
75 0.04

Transfer Characteristics

R DS(on) - On-Resistance ()

g fs - Transconductance (S)

60 TC = - 55 C 45 TC = 25 C 30 TC = 125 C

0.03

0.02

VGS = 8 V

VGS = 10 V 0.01

15

0 0 10 20 30 40 50

0.00 0 20 40 60 80 100 120

ID - Drain Current (A)

ID - Drain Current (A)

Transconductance
3500 20

On-Resistance vs. Drain Current

2800 C - Capacitance (pF)

Ciss

VGS - Gate-to-Source Voltage (V)

ID = 15 A 15 VDS = 50 V VDS = 80 V 10

2100

1400

700 Crss 0 0 20 40 60 80 100 Coss

0 0 20 40 60 80 100

VDS - Drain-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

Capacitance

Gate Charge www.vishay.com 3

Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2.5
ID = 15 A VGS = 10 V

100 TJ = 150 C TJ = 25 C

10 R DS(on) - On-Resistance I S - Source Current (A) 2.0 (Normalized)

VGS = 8 V

1.5

0.1

1.0

0.01

0.5 - 50

- 25

25

50

75

100

125

150

175

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ - Junction Temperature (C)

VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature


0.10 ID = 15 A R DS(on) - On-Resistance () 0.08 VGS(th) Variance (V) 0.2 0.7

Source-Drain Diode Forward Voltage

- 0.3

0.06

- 0.8

ID = 5 mA

0.04

TJ = 150 C

- 1.3 ID = 250 A - 1.8

0.02 TJ = 25 C 0.00 4 5 6 7 8 9 10

- 2.3 - 50

- 25

25

50

75

100

125

150

175

VGS - Gate-to-Source Voltage (V)

TJ - Temperature (C)

On-Resistance vs. Gate-to-Source Voltage


130 ID = 1 mA 125 R DS(on) - On-Resistance 120 (Normalized)
I DAV (A) 100

Threshold Voltage

115 110 105 100 95 - 50

TJ = 25 C 10 TJ = 150 C

- 25

25

50

75

100

125

150

175

1 10-5

10-4

10-3 t AV (s)

10-2

10-1

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature

Avalanche Current vs. Time

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Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100 Limited by RDS(on)* 100 s I D - Drain Current (A) 10 1 ms 10 ms, DC 1 10 s

0.1 TC = 25 C Single Pulse 0.01 0.1 BVDSS Limited

10

100

1000

VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area


180 75

150 I D - Drain Current (A)

60

120 Power (W)

45

90

30

60

30

15

0
0 25 50 75 100 125 150 175

0 0 25 50 75 100 125 150 175

TC - Case Temperature (C)

TC - Case Temperature (C)

Power Derating, Junction-to-Case

Current Derating*

* The power dissipation PD is based on TJ(max.) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

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SUP60N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.02 Single Pulse 0.05

0.01 10 -4

10 -3

10 -2 Square Wave Pulse Duration (s)

10 -1

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65003.

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Document Number: 65003 S09-1096-Rev. A, 15-Jun-09

Package Information
Vishay Siliconix

TO-220AB
E A F P Q H(1)

MILLIMETERS DIM. A b b(1) c D E MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60 MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00 MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102

INCHES MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118

e e(1) F H(1)
1
L(1)

J(1) L L(1)
*M b(1)

P Q

ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM
C

b e J(1) e(1)

Document Number: 71195 Revison: 01-Nov-10

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Legal Disclaimer Notice


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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000

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