VLSI PROCESS TECHNOLOGY

Assignment - 1, Due date: 17-09-2013 1. Assuming that the dopant atoms are uniformly distributed in a Si crystal, how far apart (average) are these atoms when the doping concentration is (a) 1014, (b) 1016, (c) 1018 and (d) 1020 cm3? 2. Consider a pure Si, 100 m long having a cross section area of 1 m2. How much current would flow through this resistor at room temperature in response to an applied voltage of 1 V? Assume ni = 1.451010 cm3, n = 1500 cm2V1s1, p = 500 cm2V1s1, q = 1.61019 C. 3. A boron-doped crystal pulled by the Czochralski technique is required to have a resistivity of 10 cm when half the crystal is grown. Assuming that a 1000 g pure silicon melt is used, how much 0.01 cm boron doped silicon must be added to the melt? For this crystal, plot the resistivity as a function of the fraction of the melt solidified. Assume kO = 0.8 and the hole mobility p = 550 cm2V1s1. 4. A Czochralski crystal is grown with an initial Sb concentration in the melt of 1 1016 cm3. After 80% of the melt has been used up in pulling the crystal, pure silicon is added to return the melt to its original volume, and the growth is then resumed. What will the Sb concentration in the crystal be after 50% of the new melt has been consumed by growth? Assume kO= 0.02 for Sb. 5. An IC manufacturing plant produces1000 wafers per week. Assume that each wafer contains 100 die, each of which can be sold for $ 50, if it works. The yield on these chips is currently running at 50%. If the yield can be increased, the incremental income is almost pure profit because all 100 chips on each wafer are manufactured whether they work or not. How much would the yield have to be increased to produce an annual profit increase of $ 10,000,000? 6. Starting from the raw material, give a flowchart with schematic diagrams to make Si wafers. 7. Determine the packing densities of SC, BCC, FCC and diamond crystals. Also determine the bond angle for Si. 8. In a particular oxidation process, in the initial phase, the growth is approximately linear at 0.2 m/hr. However, when the oxidation is carried out for 5 hours, the oxide thickness is 0.85 m. (a) Assuming =0, find the values of A & B. (b) If the above oxidation is carried out at elevated gas pressure, how will the oxidation rates change? Give reason. 9. A silicon wafer is covered with an initial oxide of thickness 20 nm. It is then subjected to further oxidation so that after 30 min, the oxide thickness is 0.2 m, and after 2 hrs it is 0.5 m. Find the rate constants. What is the duration required to get the final oxide thickness of 0.8 m? 10. A silicon wafer is oxidized using a system for which A = 0.2 m and B = 0.3 m 2/hr. If the initial oxide thickness is zero, what will be the oxide thickness after 2 hrs? Now, a window of 5 m 5 m is opened in the oxide and the sample is subjected to further oxidation for 30 min. Calculate the final oxide thickness and sketch the cross-section diagram of the sample. ********